irhm7250.p65
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
26
ID @ VGS = 12V, TC = 100C Continuous Drain Current
16
IDM
Pulsed Drain Current
104
PD @ TC = 25C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
26
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
PD - 90674C
Pre-Irradiation
International Rectifier's RADHard HEXFET
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENED
JANSR2N7269
POWER MOSFET
THRU-HOLE (TO-254AA)
10/11/00
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1
200V, N-CHANNEL
RAD Hard
TM
HEXFET
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHM7250 100K Rads (Si)
0.10
26A
JANSR2N7269
IRHM3250 300K Rads (Si)
0.10
26A
JANSF2N7269
IRHM4250 600K Rads (Si)
0.10
26A
JANSG2N7269
IRHM8250 1000K Rads (Si) 0.10
26A
JANSH2N7269
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Light Weight
For footnotes refer to the last page
IRHM7250
REF: MIL-PRF-19500/603
TO-254AA
2
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IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
--
--
V
VGS =0 V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.27
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
--
--
0.10
VGS = 12V, ID = 16A
On-State Resistance
--
--
0.11
VGS = 12V, ID = 26A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
8.0
--
--
S (
)
VDS > 15V, IDS = 16A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS= 160V,VGS=0V
--
--
250
VDS = 160V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
170
VGS = 12V, ID = 26A
Qgs
Gate-to-Source Charge
--
--
30
nC
VDS = 100V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
60
td
(on)
Turn-On Delay Time
--
--
33
VDD = 100V, ID = 26A,
tr
Rise Time
--
--
140
RG = 2.35
td
(off)
Turn-Off Delay Time
--
--
140
tf
Fall Time
--
--
140
LS + LD
Total Inductance
--
6.8
--
Ciss
Input Capacitance
--
4700
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
850
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
210
--
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.83
RthCS
Case-to-sink
--
0.21
--
RthJA
Junction-to-Ambient
--
--
48
Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
26
ISM
Pulse Source Current (Body Diode)
--
--
104
VSD
Diode Forward Voltage
--
--
1.4
V
T
j
= 25C, IS = 26A, VGS = 0V
trr
Reverse Recovery Time
--
--
820
nS
Tj = 25C, IF = 26A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
12
C
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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3
Pre-Irradiation
IRHM7250, JANSR2N7269
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
600 to 1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 -- 200 -- V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- 100 -- 100 nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
-- -100 -- -100
V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current
-- 25 -- 50 A V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.094 -- 0.149
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
-- 0.10 -- 0.155
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
-- 1.4 -- 1.4 V V
GS
= 0V, IS = 26A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0
-5
-10
-15
-20
VGS
VDS
Cu
Br
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
V
DS(V)
MeV/(mg/cm
2
)) (MeV) (m) @
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 190 180 170 125 --
Br
36.8
305 39 100 100 100 50 --
4
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IRHM7250, JANSR2N7269
Pre-Irradiation
Post-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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5
Pre-Irradiation
IRHM7250, JANSR2N7269
Post-Irradiation
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b. V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a. Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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