Anode
1
3
Anode
Common
Cathode
2
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
1
Bulletin PD-20768 rev. C 09/04
t
rr
=30ns max.
I
F(AV)
= 30Amp
V
R
= 200V
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175C Operating Junction Temperature
Features
Hyperfast Rectifier
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
30CTH02
TO-220AB
Case Styles
30CTH02S
D
2
PAK
30CTH02-1
TO-262
30CTH02FP
TO-220 FULLPACK
Absolute Maximum Ratings
V
RRM
Peak Repetitive Reverse Voltage
200
V
I
F(AV)
Average Rectified Forward Current
@ T
C
= 159C Per Diode
15
A
@ T
C
= 125C (FULLPACK) Per Diode
Per Device
30
I
FSM
Non Repetitive Peak Surge Current @ T
J
= 25C
200
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 65 to 175
C
Parameters
Max
Units
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
www.irf.com
2
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. C
09/04
www.irf.com
V
BR
,
V
r
Breakdown Voltage,
200
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
0.92 1.05
V
I
F
= 15A, T
J
= 25C
-
0.78 0.85
V
I
F
= 15A, T
J
= 125C
I
R
Reverse Leakage Current
-
-
10
A
V
R
= V
R
Rated
-
5
300
A
T
J
= 125C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
57
-
pF
V
R
= 200V
L
S
Series Inductance
-
8
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
t
rr
Reverse Recovery Time
-
-
35
ns
I
F
= 1A, di
F
/dt = 50A/s, V
R
= 30V
-
-
30
I
F
= 1A, di
F
/dt = 100A/s, V
R
= 30V
-
26
-
T
J
= 25C
-
40
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
2.8
-
A
T
J
= 25C
-
6.0
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
37
-
nC
T
J
= 25C
-
120
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
C
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
I
F
= 15A
di
F
/dt = 200A/s
V
R
= 160V
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
-
-
175
C
T
Stg
Max. Storage Temperature Range
- 65
-
175
R
thJC
Thermal Resistance,
Per Diode
-
-
1.1
C/W
Junction to Case
Fullpack (Per Diode)
-
-
3.5
Device Marking
30CTH02
Case Style TO-220
30CTH02S
Case Style D
2
Pak
30CTH02-1
Case Style TO-262
30CTH02FP
Case Style Fullpack
Thermal - Mechanical Characteristics
Mounting Surface, Flat, Smooth and Greased
3
30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. C
09/04
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Reverse Current - I
R
( A)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1
10
100
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 175C
Tj = 125C
Tj = 25C
10
100
1000
0
50
100
150
200
T = 25C
J
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
1
10
100
0
50
100
150
200
100C
75C
50C
25C
Tj = 175C
125C
150C
4
30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. C
09/04
www.irf.com
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (C)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Fig. 8 - Forward Power Loss Characteristics
Average Forward Current - I
F
(AV)
(A)
Average Power Loss ( Watts )
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
0
5
10
15
20
25
0
5
10
15
20
25
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
140
150
160
170
180
0
5
10
15
20
25
DC
see note (2)
Square wave (D = 0.50)
Rated Vr applied
100
110
120
130
140
150
160
170
180
0
5
10
15
20
25
DC
see note (2)
Square wave (D = 0.50)
Rated Vr applied
Allowable Case Temperature (C)
5
30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. C
09/04
www.irf.com
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
trr ( ns )
Qrr ( nC )
di
F
/dt (A/s )
di
F
/dt (A/s )
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Fig. 11- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
10
100
100
1000
IF = 15 A
R
J
J
V = 390V
T = 125C
T = 25C
10
100
1000
100
1000
IF = 15 A
R
J
J
V = 390V
T = 125C
T = 25C
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