1
t
rr
= 36ns max.
I
F(AV)
= 30Amp
V
R
= 300V
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175C Operating Junction Temperature
Features
Hyperfast Rectifier
30CTH03
30CTH03
TO-220AB
Case Styles
Absolute Maximum Ratings
V
RRM
Peak Repetitive Reverse Voltage
300
V
I
F(AV)
Average Rectified Forward Current
@ Tc = 153C Per Diode
15
A
Per Device
30
I
FSM
Non Repetitive Peak Surge Current @ T
J
= 25C
150
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 65 to 175
C
Parameters
Max
Units
Anode
1
3
2
Base
Common
Cathode
2
Anode
Common
Cathode
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Bulletin PD-20770 rev. A 08/03
www.irf.com
2
30CTH03
Bulletin PD-20770 rev. A
08/03
www.irf.com
V
BR
,
V
r
Breakdown Voltage,
300
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
1.0 1.25
V
I
F
= 15A, T
J
= 25C
-
0.85 0.95
V
I
F
= 15A, T
J
= 125C
I
R
Reverse Leakage Current
-
-
40
A
V
R
= V
R
Rated
-
8
200
A
T
J
= 125C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
38
-
pF
V
R
= 300V
L
S
Series Inductance
-
8
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
-
-
175
C
T
Stg
Max. Storage Temperature Range
- 65
-
175
R
thJC
Thermal Resistance, Junction to Case
Per Diode
-
-
1.4
C/W
Thermal - Mechanical Characteristics
t
rr
Reverse Recovery Time
-
-
36
ns
I
F
= 1A, di
F
/dt = 50A/s, V
R
= 30V
-
-
30
I
F
= 1A, di
F
/dt = 100A/s, V
R
= 30V
-
33
-
T
J
= 25C
-
48
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
2.8
-
A
T
J
= 25C
-
6.5
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
46
-
nC
T
J
= 25C
-
160
-
T
J
= 125C
Dynamic Recovery Characteristics @ T
C
= 25C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
I
F
= 15A
di
F
/dt = 200A/s
V
R
= 200V
3
30CTH03
Bulletin PD-20770 rev. A
08/03
www.irf.com
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Reverse Current - I
R
(mA)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1
10
100
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 175C
Tj = 125C
Tj = 25C
10
100
1000
0
50
100 150 200 250 300
T = 25C
J
0.001
0.01
0.1
1
10
100
0
50
100 150 200 250 300
125C
25C
150C
50C
75C
100C
Tj = 175C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
4
30CTH03
Bulletin PD-20770 rev. A
08/03
www.irf.com
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (C)
Fig. 6 - Forward Power Loss Characteristics
Average Forward Current - I
F
(AV)
(A)
Average Power Loss ( Watts )
0
4
8
12
16
20
0
5
10
15
20
25
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Fig. 8 - Typical Stored Charge vs. di
F
/dt
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
trr ( ns )
Qrr ( nC )
di
F
/dt (A/s )
di
F
/dt (A/s )
10
100
100
1000
IF = 15A
Tj = 125C
Tj = 25C
Vr = 200V
10
100
1000
100
1000
IF = 15A
Tj = 125C
Tj = 25C
Vr = 200V
140
150
160
170
180
0
5
10
15
20
25
DC
Square wave (D = 0.50)
Rated Vr applied
see note (1)
5
30CTH03
Bulletin PD-20770 rev. A
08/03
www.irf.com
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
di
F
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q rr =
t rr x I RRM
2
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