V
CES
= 1200V
I
C
= 80A
T
C
= 25C
UltraFast Non Punch Through (NPT)
Technology
Positive V
CE(ON)
Temperature Coefficient
10s Short Circuit Capability
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Low Diode V
F
Square RBSOA
Aluminum Nitride DBC
Optional SMT Thermistor (NTC)
Very Low Stray Inductance Design for
High Speed Operation
UL approved (file E78996)
Features
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Breakdown Voltage
1200
V
I
C
Continuos Collector Current
@ T
C
= 25C
80
A
@ T
C
= 105C
40
I
CM
Pulsed Collector Current
160
I
LM
Clamped Inductive Load Current
160
I
F
Diode Continuous Forward Current
@ T
C
= 105C
21
I
FM
Diode Maximum Forward Current
160
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation (only IGBT)
@ T
C
= 25C
463
W
@ T
C
= 100C
185
Parameters
Max
Units
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Benefits
M
MTP
40MT120UH
"HALF-BRIDGE" IGBT MTP
UltraFast NPT IGBT
I27126 rev. C 02/03
1
www.irf.com
40MT120UH
I27126 rev. C 02/03
2
www.irf.com
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/ Temperature Coeff. of
+1.1
V/C V
GE
= 0V, I
C
= 3mA (25-125C)
T
J
Breakdown Voltage
V
CE(ON)
Collector-to-Emitter Saturation Voltage
3.36
3.59
V
V
GE
= 15V, I
C
= 40A
4.53
4.91
V
GE
= 15V, I
C
= 80A
3.88
4.10
V
GE
= 15V, I
C
= 40A T
J
= 150C
5.35
5.68
V
GE
= 15V, I
C
= 80A T
J
= 150C
V
GE(th)
Gate Threshold Voltage
4
6
V
V
CE
= V
GE
, I
C
= 500A
V
GE(th)
/ Temperature Coeff. of
-12
mV/C V
CE
= V
GE
, I
C
= 1mA (25-125C)
T
J
Threshold Voltage
g
fe
Transconductance
35
S
V
CE
= 50V, I
C
= 40A, PW = 80s
I
CES
Zero Gate Voltage Collector Current
250
A
V
GE
= 0V, V
CE
= 1200V, T
J
= 25C
0.4
1.0
mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 125C
0.2
10
V
GE
= 0V, V
CE
= 1200V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
250
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Total Gate Charge (turn-on)
399
599
nC
I
C
= 40A
Q
ge
Gate-Emitter Charge (turn-on)
43
65
V
CC
= 600V
Q
gc
Gate-Collector Charge (turn-on)
187
281
V
GE
= 15V
E
on
Turn-On Switching Loss
1142
1713
J
V
CC
= 600V, I
C
= 40A
E
off
Turn-Off Switching Loss
1345
2018
V
GE
= 15V, R
g
= 5
, L = 200H
E
tot
Total Switching Loss
2487
3731
T
J
= 25C, Energy losses include tail
and diode reverse recovery
E
on
Turn-On Switching Loss
1598
2397
J
V
CC
= 600V, I
C
= 40A
E
off
Turn-Off Switching Loss
1618
2427
V
GE
= 15V, R
g
= 5
, L = 200H
E
tot
Total Switching Loss
3216
4824
T
J
= 125C, Energy losses include tail
and diode reverse recovery
C
ies
Input Capacitance
5521
8282
pF
V
GE
= 0V
C
oes
Output Capacitance
380
570
V
CC
= 30V
C
res
Reverse Transfer Capacitance
171
257
f = 1.0 MHz
RBSOA
Reverse Bias Safe Operating Area
full square
T
J
= 150C, I
C
= 160A
V
CC
= 1000V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
s
T
J
= 150C
V
CC
= 900V, V
p
= 1200V
R
g
= 5
, V
GE
= +15V to 0V
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Bulletin I27126 rev. B 10/02
3
40MT120UH
www.irf.com
V
FM
Diode Forward Voltage Drop
2.98
3.38
V
I
C
= 40A
3.90
4.41
I
C
= 80A
3.08
3.39
I
C
= 40A, T
J
= 125C
4.29
4.72
I
C
= 80A, T
J
= 125C
3.12
3.42
I
C
= 40A, T
J
= 150C
E
rec
Reverse Recovery Energy of the Diode
574
861
J
V
GE
= 15V, R
g
= 5
, L = 200H
trr
Diode Reverse Recovery Time
120
180
ns
V
CC
= 600V, I
C
= 40A
Irr
Peak Reverse Recovery Current
43
65
A
T
J
= 125C
Thermal- Mechanical Specifications
T
J
Operating Junction Temperature Range
- 40
150
C
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
IGBT
0.20
0.27
C/ W
Diode
0.39
0.59
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (
external shortest distance in air
5.5
mm
between two terminals)
Creepage (
shortest distance along external
8
surface of the insulating material between 2 terminals
)
T
Mounting torque to heatsink
(3)
3 10%
Nm
Wt
Weight
66
g (oz)
Parameters
Min
Typ
Max
Units
Diode Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
R
0
(1)
Resistance
30
k
T
0
= 25C
(1) (2)
Sensitivity index of the thermistor
4000
K
T
0
= 25C
material
T
1
= 85C
Thermistor Specifications (40MT120UHT only)
Parameters
Min Typ Max Units Test Conditions
R
0
R
1
(2)
= exp
[
( )]
,
Temperatures in Kelvin
1
T
0
(1)
T
0
,T
1
are thermistor's temperatures
1
T
1
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
40MT120UH
I27126 rev. C 02/03
4
www.irf.com
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25C; T
J
150C
Fig. 4 - Reverse Bias SOA
T
J
= 150C; V
GE
=15V
1
10
100
1000
10000
VCE (V)
0.01
0.1
1
10
100
1000
I C
(A)
10 s
100 s
10ms
DC
0
20
40
60
80
100 120 140 160
TC (C)
0
20
40
60
80
100
I C
(A)
10
100
1000
10000
VCE (V)
1
10
100
1000
I C
(A)
0
20
40
60
80
100 120 140 160
TC (C)
0
100
200
300
400
500
600
P
D
(W)
Bulletin I27126 rev. B 10/02
5
40MT120UH
www.irf.com
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25C; tp = 80s
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80s
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 125C; tp = 80s
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I CE
(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I CE
(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I CE
(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
3.0
4.0
5.0
VF (V)
0
20
40
60
80
100
120
I F
(A)
-40C
25C
125C
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