4.0 Amps Single Phase Full Wave
Bridge Rectifier
I
O(AV)
= 4A
V
RRM
= 50/ 800V
4GBL Series
1
Bulletin I2716 rev. F 06/03
www.irf.com
Description
These GBL Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Parameters
4GBL
Units
Major Ratings and Characteristics
I
O
4
A
@ T
C
50
C
I
FSM
@
50Hz
150
A
@ 60Hz
158
A
I
2
t
@ 50Hz
113
A
2
s
@ 60Hz
104
A
2
s
V
RRM
range
50 to 800
V
T
J
- 55 to 150
o
C
4GBL
Features
Diode chips are glass passivated
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS
)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260C for 8-10 secs
UL E160375 approved
PART OBSOLETE - EOL18
4GBL Series
2
Bulletin I2716 rev. F 06/03
www.irf.com
I
O
Maximum DC output current
4
A
T
C
= 50C, Resistive & inductive load
3.2
T
C
= 50C, Capacitive load
I
FSM
Maximum peak, one-cycle
150
t = 10ms, 20ms
non-repetitive surge current,
following any rated load condition
158
t = 8.3ms, 16.7ms
T
J
= 150C
and with rated V
RRM
reapplied
I
2
t
Maximum I
2
t for fusing,
113
A
2
s
t = 10ms
initial T
J
= T
J
max
104
t = 8.3ms
V
FM
Maximum peak forward voltage
0.975
V
T
J
= 25
o
C, I
FM
= 4A
per diode
I
RM
Typical peak reverse leakage
5
A
T
J
= 25
o
C, 100% V
RRM
curren t per diode
V
RRM
Maximum repetitive peak
50 to 800
V
reverse voltage range
Forward Conduction
Voltage V
RRM
, max repetitive V
RMS
, maximum
V
RSM
, max non-repetitive
I
RRM
max.
I
RRM
max.
Type number Code
peak rev. voltage
RMS voltage
reverse voltage
@ rated V
RRM
@ rated V
RRM
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= 25C
T
J
= 150C
V
V
V
A
A
4GBL
005
50
35
75
5
400
01
100
70
150
5
400
02
200
140
275
5
400
04
400
280
500
5
400
06
600
420
725
5
400
08
800
560
900
5
400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBL
Unit
Conditions
T
J
Operating and storage
-55 to 150
o
C
T
stg
temperature range
R
thJC
Max. thermal resistance
6.5
C/ W
DC rated current through bridge (1)
junction to case
R
thJA
Thermal resistance,
22
C/ W
DC rated current through bridge (1)
junction to ambient
W
Approximate weight
2 (0.07)
g (oz)
Thermal and Mechanical Specifications
Parameters
4GBL
Unit
Conditions
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
4GBL Series
3
Bulletin I2716 rev. F 06/03
www.irf.com
1
-
Bridge current
2
-
Basic Part Number
3
-
Voltage Code: code x 100 = V
RRM
4
GBL
08
1
2
3
Ordering Information Table
Device Code
Outline Table
All dimensions are in millimetres
4GBL Series
4
Bulletin I2716 rev. F 06/03
www.irf.com
Fig. 2 - Forward Voltage Drop Characteristics
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Maximum Allowable Case Temperature (C)
Average Forward Current (A)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
20
40
60
80
100
120
140
160
0
1
2
3
4
5
180
(Sine)
180
(Rect)
4GBL Series
40
60
80
100
120
140
160
1
10
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4GBL Series
0.1
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
T = 25C
J
T = 150C
J
4GBL Series
0
1
2
3
4
5
6
7
0
1
2
3
4
180
(Sine)
180
(Rect)
4GBL Series
T = 150C
J
4GBL Series
5
Bulletin I2716 rev. F 06/03
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 06/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
PDF 
ZIP