1
www.irf.com
UFB200FA40
Bulletin PD-20486 rev. C 10/02
V
R
Cathode-to-Anode Voltage
400
V
I
F
Continuous Forward Current, T
C
= 90C
Per Diode
115
A
I
FSM
Single Pulse Forward Current, T
C
= 25C
Per Diode
1300
P
D
Max. Power Dissipation, T
C
@ 90C
Per Module
240
W
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
V
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 55 to 150
C
Parameters
Max
Units
Absolute Maximum Ratings
Case Styles
UFB200FA40
2
1
4
3
SOT-227
Features
Description
t
rr
= 60ns
I
F(AV)
= 230A
@ T
C
= 90C
V
R
= 400V
Insulated Ultrafast Rectifier Module
Two Fully Independent Diodes
Ceramic Fully Insulated Package (V
ISOL
= 2500V AC)
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Industry Standard Outline
Plug-in Compatible with other SOT-227 Packages
Easy to Assemble
Direct Mounting to Heatsink
The UFB200FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-
time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
UFB200FA40
Bulletin PD-20486 rev. C 10/02
2
www.irf.com
V
BR
Cathode Anode
400
-
-
V
I
R
= 100A
Breakdown Voltage
V
FM
Forward Voltage
-
1.04 1.24
V
I
F
= 100A
-
0.94 1.00
V
I
F
= 100A, T
J
= 150C
I
RM
Reverse Leakage Current
-
-
50
A
V
R
= V
R
Rated
-
-
4
mA
T
J
= 150C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
100
-
pF
V
R
= 400V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified) per diode
Parameters
Min Typ Max Units Test Conditions
R
thJC
Junction to Case, Single Leg Conducting
0.5
C/W
Both Leg Conducting
0.25
K/W
R
thCS
Case to Heat Sink, Flat, Greased Surface
0.05
Wt
Weight
30
g
T
Mounting Torque
1.3
(Nm)
Parameters
Min
Typ
Max
Units
Thermal - Mechanical Characteristics
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified) per diode
t
rr
Reverse Recovery Time
-
-
60
ns
I
F
= 1.0A, di
F
/dt = 200A/s, V
R
= 30V
-
93
-
T
J
= 25C
-
172
-
T
J
= 125C
I
RRM
Peak Recovery Current
-
10.5
-
A
T
J
= 25C
-
20.2
-
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
490
-
nC
T
J
= 25C
-
1740
-
T
J
= 125C
I
F
= 150A
V
R
= 200V
di
F
/dt = 200A/s
Parameters
Min Typ Max Units Test Conditions
Bulletin PD-20486 rev. C 10/02
UFB200FA40
3
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
F
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (per diode)
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
Reverse Current - I
R
(A)
10
100
1000
10000
10
100
1000
T = 25C
J
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
1
10
100
1000
0
0.4
0.8
1.2
1.6
T = 150C
T = 125C
T = 25C
J
J
J
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
200
25C
125C
Tj = 150C
UFB200FA40
Bulletin PD-20486 rev. C 10/02
4
www.irf.com
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per leg)
Fig. 6 - Forward Power Loss Characteristics
(per leg)
(3) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Power Loss ( W )
trr ( ns )
Qrr ( nC )
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (C)
Average Forward Current - I
F(AV)
(A)
di
F
/dt (A/s )
di
F
/dt (A/s )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
50
100
150
200
250
100
1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125C
Tj = 25C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
100
1000
IF = 150A
IF = 75A
Vr = 200V
Tj = 125C
Tj = 25C
60
70
80
90
100
110
120
130
140
150
0
20
40
60
80 100 120 140 160
DC
see note (3)
Square wave (D = 0.50)
Rated Vr applied
0
20
40
60
80
100
120
140
160
0
20
40
60
80 100 120 140 160
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Bulletin PD-20486 rev. C 10/02
UFB200FA40
5
www.irf.com
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
4. Q
rr
- Area under curve defined by
t
rr
and I
RRM
5. di
(rec) M
/ dt - Peak rate of change
of current during t
b
portion of t
rr
1. di
F
/dt - Rate of change of current through
zero crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from
zero crossing point of negative going I
F
to
point where a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q
rr =
t rr x I
RRM
2
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
SOT-227 Package Details
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
Notes:
FRED
LEAD ASSIGNMENTS
PDF 
ZIP