Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current, each IGBT
7.2
I
C
@ T
C
= 100C
Continuous Collector Current, each IGBT
3.9
I
CM
Pulsed Collector Current
22
A
I
LM
Clamped Inductive Load Current
22
I
F
@ T
C
= 100C
Diode Continuous Forward Current
3.4
I
FM
Diode Maximum Forward Current
22
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
Isolation Voltage, any terminal to case, 1 minute
2500
V
RMS
P
D
@ T
C
= 25C
Maximum Power Dissipation, each IGBT
23
W
P
D
@ T
C
= 100C
Maximum Power Dissipation, each IGBT
9.1
T
J
Operating Junction and
-40 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
5-7 lbfin (0.55-0.8 Nm)
CPV362M4U
PRELIMINARY
PD -5044
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
5.5
R
JC
(DIODE)
Junction-to-Case, each diode, one diode in conduction
9.0
C/W
R
CS
(MODULE)
Case-to-Sink, flat, greased surface
0.10
Wt
Weight of module
20 (0.7)
g (oz)
UltraFast IGBT
IGBT SIP MODULE
Thermal Resistance
Features
Description
3
6
7
1 3
1 9
1 8
1 5
1 0
1 6
4
9
1 2
D 1
D 3
D 5
D 2
D 4
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
1
Output Current in a Typical 20 kHz Motor Drive
Product Summary
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
TM
soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
4.6 A
RMS
per phase (1.3 kW total) with T
C
= 90C, T
J
= 125C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
12/23/96
IMS-2
CPV362M4U
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
0.63
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
1.70
2.2
I
C
= 3.9A
V
GE
= 15V
1.95
V
I
C
= 7.2A
See Fig. 2, 5
1.70
I
C
= 3.9A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
-11
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
1.4
4.3
S
V
CE
= 100V, I
C
= 6.5A
I
CES
Zero Gate Voltage Collector Current
250
A
V
GE
= 0V, V
CE
= 600V
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
1.4
1.7
V
I
C
= 8.0A
See Fig. 13
1.3
1.6
I
C
= 8.0A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
31
47
I
C
= 3.9A
Q
ge
Gate - Emitter Charge (turn-on)
5.0
7.5
nC
V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on)
13
20
V
GE
= 15V
t
d(on)
Turn-On Delay Time
45
T
J
= 25C
t
r
Rise Time
22
ns
I
C
= 3.9A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
100
160
V
GE
= 15V, R
G
= 50
t
f
Fall Time
120
180
Energy losses include "tail" and
E
on
Turn-On Switching Loss
0.13
diode reverse recovery.
E
off
Turn-Off Switching Loss
0.07
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
0.20
0.3
t
d(on)
Turn-On Delay Time
42
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
22
ns
I
C
= 3.9A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
120
V
GE
= 15V, R
G
= 50
t
f
Fall Time
250
Energy losses include "tail" and
E
ts
Total Switching Loss
0.35
mJ
diode reverse recovery.
C
ies
Input Capacitance
530
V
GE
= 0V
C
oes
Output Capacitance
39
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
7.4
= 1.0MHz
t
rr
Diode Reverse Recovery Time
37
55
ns
T
J
= 25C See Fig.
55
90
T
J
= 125C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Charge
3.5
5.0
A
T
J
= 25C See Fig.
4.5
8.0
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
65
138
nC
T
J
= 25C See Fig.
124
360
T
J
= 125C 16 di/dt =200As
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
240
A/s
T
J
= 25C See Fig.
During t
b
210
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
CPV362M4U
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
0
1
2
3
4
5
6
7
8
f, Frequency (KHz)
LOAD CURRENT (A)
T c = 9 0 C
T j = 1 25 C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
0.00
0.29
0.59
0.88
1.17
1.46
1.76
Total Output Power (kW)
2.05
2.34
0 . 1
1
1 0
1 0 0
0 . 1
1
1 0
C E
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150C
T = 25C
J
J
V = 15V
2 0 s P U L S E W I D T H
G E
A
0 . 1
1
1 0
1 0 0
4
6
8
1 0
C
I , Collector-to-Emitter Current (A)
G E
T = 25C
T = 150C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 10V
5 s P U L S E W I D T H
C C
CPV362M4U
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0 .1
1
10
0.000 01
0.00 01
0 .00 1
0.01
0.1
1
10
t , R e ct an g ula r P u ls e D ur a t io n (s e c)
1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(T H ERMA L RES PO NSE)
T
her
m
al R
e
s
pon
s
e
(
Z
)
P
t
2
1
t
D M
N otes :
1. D u ty fact or D = t / t
2. P e ak T = P x Z + T
1
2
J
D M
th JC
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
1.95
C
I = A
3.9
C
I = A
7.8
C
25
50
75
100
125
150
0
2
3
5
6
8
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
CPV362M4U
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
2 0 0
4 0 0
6 0 0
8 0 0
1 0 0 0
1
1 0
1 0 0
C E
C
,
C
apaci
t
ance
(
p
F)
V , C olle ctor-to-E m itter V ol ta ge (V )
A
V = 0V, f = 1M H z
C = C + C , C SH O R TE D
C = C
C = C + C
G E
ies ge g c c e
res gc
oes ce g c
C
i e s
C
re s
C
o e s
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = 50Ohm
V = 15V
V = 480V
G
GE
CC
I = A
7.8
C
I = A
3.9
C
I = A
1.95
C
0
10
20
30
40
50
0.15
0.16
0.17
0.18
0.19
0.20
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 3.9A
CC
GE
J
C
()
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 3.9A
CC
C
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