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C-963
CPV362MK
Short Circuit Rated UltraFast IGBT
IGBT SIP MODULE
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
--
5.5
R
JC
(DIODE)
Junction-to-Case, each diode, one diode in conduction
--
9.0
C/W
R
CS
(MODULE)
Case-to-Sink, flat, greased surface
0.1
--
Wt
Weight of module
20 (0.7)
--
g (oz)
Thermal Resistance
Features
Short Circuit Rated - 10s @ 125C, V
GE
= 15V
Fully isolated printed circuit board mount package
Switching-loss rating includes all "tail" losses
HEXFRED
TM
soft ultrafast diodes
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 20 kHz Motor Drive
3.5 A
RMS
per phase (1.1 kW total) with T
C
= 90C, T
J
= 125C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
3
6
7
13
19
18
15
10
16
4
9
12
D1
D3
D5
D2
D4
D6
Q1
Q2
Q3
Q4
Q5
Q6
1
PD - 5.032
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current, each IGBT
5.7
I
C
@ T
C
= 100C
Continuous Collector Current, each IGBT
3.0
I
CM
Pulsed Collector Current
11
A
I
LM
Clamped Inductive Load Current
11
I
F
@ T
C
= 100C
Diode Continuous Forward Current
3.4
I
FM
Diode Maximum Forward Current
11
t
sc
Short Circuit Withstand Time
10
s
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
Isolation Voltage, any terminal to case, 1 min.
2500
V
RMS
P
D
@ T
C
= 25C
Maximum Power Dissipation, each IGBT
23
W
P
D
@ T
C
= 100C
Maximum Power Dissipation, each IGBT
9.1
T
J
Operating Junction and
-40 to +150
T
STG
Storage Temperature Range
C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
5-7 lbfin (0.55 - 0.8 Nm)
IMS-2
Revision 2
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C-964
CPV362MK
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
--
0.37
--
V/C
V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
--
2.3
3.5
I
C
= 3.0A
V
GE
= 15V
--
2.7
--
V
I
C
= 5.7A
See Fig. 2, 5
--
2.2
--
I
C
= 3.0A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
5.5
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance
1.9
3.3
--
S
V
CE
= 100V, I
C
= 6.0A
I
CES
Zero Gate Voltage Collector Current
--
--
250
A
V
GE
= 0V, V
CE
= 600V
--
--
1700
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
FM
Diode Forward Voltage Drop
--
1.4
1.7
V
I
C
= 8.0A
See Fig. 13
--
1.3
1.6
I
C
= 8.0A, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
500
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20)
Notes:
Pulse width 5.0s,
single shot.
V
CC
=80%(V
CES
), V
GE
=20V, L=10H,
R
G
= 50
, ( See fig. 19 )
Pulse width
80s; duty factor
0.1%.
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
17
26
I
C
= 6.0A
Q
ge
Gate - Emitter Charge (turn-on)
--
4.3
6.8
nC
V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on)
--
6.4
11
See Fig. 8
t
d(on)
Turn-On Delay Time
--
60
--
T
J
= 25C
t
r
Rise Time
--
20
--
ns
I
C
= 3.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
110
220
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
50
110
Energy losses include "tail" and
E
on
Turn-On Switching Loss
--
0.10
--
diode reverse recovery.
E
off
Turn-Off Switching Loss
--
0.10
--
mJ
See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss
--
0.20 0.27
t
sc
Short Circuit Withstand Time
10
--
--
s
V
CC
= 360V, T
J
= 125C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
t
d(on)
Turn-On Delay Time
--
60
--
T
J
= 150C, See Fig. 9, 10, 11, 18
t
r
Rise Time
--
17
--
ns
I
C
= 3.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
230
--
V
GE
= 15V, R
G
= 50
t
f
Fall Time
--
130
--
Energy losses include "tail" and
E
ts
Total Switching Loss
--
0.29
--
mJ
diode reverse recovery.
C
ies
Input Capacitance
--
350
--
V
GE
= 0V
C
oes
Output Capacitance
--
50
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
4.7
--
= 1.0MHz
t
rr
Diode Reverse Recovery Time
--
37
55
ns
T
J
= 25C See Fig.
--
55
90
T
J
= 125C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current
--
3.5
5.0
A
T
J
= 25C See Fig.
--
4.5
8.0
T
J
= 125C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
--
65
138
nC
T
J
= 25C See Fig.
--
124
360
T
J
= 125C 16 di/dt = 200A/s
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
--
240
--
A/s
T
J
= 25C See Fig.
During t
b
--
210
--
T
J
= 125C 17
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
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C-965
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV362MK
0.0
1.0
2.0
3.0
4.0
5.0
0
1
10
100
f, Frequency (kHz)
L
o
a
d
C
u
r
r
e
n
t
(
A
)
T
o
t
a
l
O
u
t
p
u
t
P
o
w
e
r
(
k
W
)
0
T = 90C
T = 125C
Power Factor = 0.8
Modulation Depth = 0.8
V = 60% of Rated Voltage
C
J
CC
1.6
1.2
0.9
0.6
0.3
0 .1
1
1 0
1 0 0
0 .1
1
1 0
C E
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , C o llector-to-E m itter V oltage (V )
T = 1 50 C
T = 2 5 C
J
J
V = 1 5 V
2 0 s P U LS E W ID TH
G E
1
1 0
1 0 0
5
1 0
1 5
2 0
C
I
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
V , G a te -to -E m itte r V o lta g e (V )
G E
T = 2 5C
T = 1 50 C
J
J
V = 1 00 V
5 s P U L S E W ID T H
C C
To Order
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C-966
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
CPV362MK
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
1 .0
2 .0
3 .0
4 .0
5 .0
-6 0
-4 0
-2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
T , C ase Tem perature (C )
C
C
E
V
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V = 15 V
80 s P U L S E W ID T H
G E
I = 1 2A
I = 6.0A
I = 3.0 A
C
C
C
0
2
4
6
25
50
75
100
125
150
M
a
x
i
m
u
m
D
C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
T , Case Temperature (C)
C
V = 15V
GE
A
0 .0 1
0 .1
1
1 0
0 .0 0 0 0 1
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
1 0
t , R e c ta n g u lar P u ls e D u ra tio n (s e c )
1
t
h
J
C
D = 0 .5 0
0 .0 1
0 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
)
P
t
2
1
t
D M
N o te s :
1 . D u ty fa c to r D = t / t
2 . P e a k T = P x Z + T
1
2
J
D M
th J C
C
To Order
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C-967
CPV362MK
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
0.17
0.18
0.19
0.20
0.21
0
10
20
30
40
50
60
G
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25C
I = 3.0A
CC
GE
C
C
0.1
1
-60
-40 -20
0
20
40
60
80
100 120 140 160
C
T , Case Temperature (C)
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
A
R = 50
V = 15V
V = 480V
G
GE
CC
I = 6.0A
I = 3.0A
I = 1.5A
C
C
C
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
1
1 0
1 00
C E
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V , C o llector-to-E m itter V oltage (V )
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
1 2
1 6
2 0
0
4
8
1 2
1 6
2 0
G
E
V
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
Q , Total G ate C harge (nC )
g
V = 4 80 V
I = 6.0 A
C E
C
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