4/24/2000
GA100TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
V
CES
=
600
V
V
CE
(on) typ.
= 1.6V
@V
GE
=
15V
,
I
C
=
100A
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case - IGBT
--
0.38
R
JC
Thermal Resistance, Junction-to-Case - Diode
--
0.70
C/W
R
CS
Thermal Resistance, Case-to-Sink - Module
0.1
--
Mounting Torque, Case-to-Heatsink
--
4.0
N m
Mounting Torque, Case-to-Terminal 1, 2 & 3
S
--
3.0
Weight of Module
200
--
g
Thermal / Mechanical Characteristics
Ultra-Fast
TM
Speed IGBT
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
100
I
CM
Pulsed Collector Current
200
A
I
LM
Peak Switching Current,
200
I
FM
Peak Diode Forward Current
200
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
P
D
@ T
C
= 25C
Maximum Power Dissipation
320
W
P
D
@ T
C
= 85C
Maximum Power Dissipation
170
T
J
Operating Junction Temperature Range
-40 to +150
C
T
STG
Storage Temperature Range
-40 to +125
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED
TM
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL recognition pending
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
Generation 4 IGBT technology
.
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1
PD -50055B
GA100TS60U
2
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Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
443
664
V
CC
= 400V
Q
ge
Gate - Emitter Charge (turn-on)
--
86
129
nC
I
C
= 66A
Q
gc
Gate - Collector Charge (turn-on)
--
150
225
T
J
= 25C
t
d(on)
Turn-On Delay Time
--
168
--
R
G1
= 27
, R
G2
= 0
t
r
Rise Time
--
145
--
ns
I
C
= 100A
t
d(off)
Turn-Off Delay Time
--
320
--
V
CC =
360V
t
f
Fall Time
--
242
--
V
GE
= 15V
E
on
Turn-On Switching Energy
--
4.0
--
mJ
E
off (1)
Turn-Off Switching Energy
--
7.0
--
E
ts (1)
Total Switching Energy
--
11
17
C
ies
Input Capacitance
--
9837
--
V
GE
= 0V
C
oes
Output Capacitance
--
615
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
128
--
= 1 MHz
t
rr
Diode Reverse Recovery Time
--
143
--
ns
I
C
= 100A
I
rr
Diode Peak ReverseCurrent
--
95
--
A
R
G1
= 27
Q
rr
Diode Recovery Charge
--
6813
--
nC
R
G2
= 0
di
(rec)
M
/dt
Diode Peak Rate of Fall of Recovery
--
1883
--
A/s
V
CC =
360V
During t
b
di/dt1300A/s
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
GE
= 0V, I
C
= 1mA
V
CE(on)
Collector-to-Emitter Voltage
--
1.6
2.1
V
GE
= 15V, I
C
= 100A
--
1.6
--
V
V
GE
= 15V, I
C
= 100A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
I
C
= 500A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 500A
g
fe
Forward Transconductance ,,
--
107
--
S
V
CE
= 25V, I
C
= 100A
I
CES
Collector-to-Emitter Leaking Current
--
--
1.0
mA
V
GE
= 0V, V
CE
= 600V
--
--
10
V
GE
= 0V, V
CE
= 600V, T
J
= 125C
V
FM
Diode Forward Voltage - Maximum
--
3.6
--
V
I
F
= 100A, V
GE
= 0V
--
3.5
--
I
F
= 100A, V
GE
= 0V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
--
--
100
nA
V
GE
= 20V
Dynamic Characteristics - T
J
= 125C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
GA100TS60U
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3
0.1
1
10
100
0
20
40
60
80
100
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
10
100
1000
0.8
1.2
1.6
2.0
2.4
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15 V
20s PULSE WIDTH
GE
T = 125 C
J
T = 25 C
J
1
10
100
1000
5
6
7
8
9
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 125 C
J
o
V
CE
= 25V
80s PULSE WIDTH
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 C
T = 9 0 C
G a te d riv e a s s p e c ifie d
sink
J
P o w e r D is s ip a tio n = W
73
60 % of ra ted
vo ltag e
I
Id e a l d io d e s
S q u a re w a v e :
GA100TS60U
4
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
20
40
60
80
100
120
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
50
C
I = A
100
C
I = A
200
C
0 . 0 1
0 . 1
1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
1
th
J
C
t , R e c ta ng ular P u lse D u ra tio n (S e co n d s )
D = 0 .5 0
S in g le P u ls e
(T h e rm a l R e sis ta n c e )
T
her
m
a
l
I
m
p
e
danc
e
-
Z
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
0.01
0.20
0.10
0 .05
0.02
GA100TS60U
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
10
20
30
40
50
8
10
12
14
16
18
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 360V
V = 15V
T = 25 C
I = 100A
CC
GE
J
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 360V
G
GE
CC
I = A
200
C
I = A
100
C
I = A
50
C
R
G1
, Gate Resistance
(
)
125C
R
G1
=15
;R
G2
= 0
1
10
100
0
4000
8000
12000
16000
20000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
100
200
300
400
500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 66A
CC
C
GA100TS60U
6
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Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Reverse Bias SOA
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. di
f
/dt
0
40
80
120
160
200
0
5
10
15
20
25
30
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 0V
V = 15V
G
J
CC
GE
R
G1
=15
;R
G2
= 0
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
C E
SAFE O PER AT IN G AR EA
V , Collector-to-Em itter Voltage (V)
A
V = 20V
T = 125C
V m easured at term inal (Peak V oltage)
G E
J
C E
1 0
1 0 0
1 0 0 0
1 . 0
2 . 0
3 . 0
4 . 0
5 . 0
FM
F
I
n
s
t
an
t
a
n
eou
s
F
o
r
w
ar
d
C
u
r
r
en
t
-
I
(
A
)
F o rwa rd V o lta g e D ro p - V (V )
T = 125C
T = 25C
J
J
0
2 0 0 0
4 0 0 0
6 0 0 0
8 0 0 0
1 0 0 0 0
1 2 0 0 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
di /dt - (A /s)
RR
Q
-
(
n
C
)
I = 2 00 A
I = 1 00 A
I = 5 0A
F
F
F
R
J
J
V = 36 0 V
T = 12 5 C
T = 25 C
GA100TS60U
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7
Fig. 15 - Typical Reverse Recovery vs. di
f
/dt
Fig. 16 - Typical Recovery Current vs. di
f
/dt
8 0
1 2 0
1 6 0
2 0 0
2 4 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
di /dt - (A /s)
t
-
(
n
s
)
rr
I = 2 00 A
I = 1 00 A
I = 50 A
F
F
F
R
J
J
V = 3 6 0V
T = 1 25 C
T = 2 5C
0
3 0
6 0
9 0
1 2 0
1 5 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
d i /d t - (A / s )
I
-
(
A
)
IR
R
M
I = 2 00 A
I = 1 00 A
I = 50 A
F
F
F
R
J
J
V = 3 6 0 V
T = 1 2 5 C
T = 2 5 C
GA100TS60U
8
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t1
Ic
V c e
t1
t2
9 0 % Ic
1 0 % V c e
td (o ff)
tf
Ic
5 % Ic
t1 + 5 S
V c e ic d t
9 0 % V g e
+ V g e
E o f f =
Fig. 18 -
Test Waveforms for Circuit of Fig. 17, Defining E
off
,
t
d(off)
, t
f
V ce ie d t
t2
t1
5 % V c e
Ic
Ip k
V c c
1 0 % Ic
V c e
t1
t2
D U T V O L T A G E
A N D C U R R E N T
G A T E V O L T A G E D .U .T .
+ V g
1 0 % +V g
9 0 % Ic
tr
td (o n )
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
tx
E o n =
E re c =
t4
t3
V d id d t
t4
t3
D IO D E R E C O V E R Y
W A V E F O R M S
Ic
V p k
1 0 % V c c
Irr
1 0 % Irr
V cc
trr
Q rr =
trr
tx
id d t
Fig. 17 -
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 19 -
Test Waveforms for Circuit of Fig. 17,
Defining E
on
, t
d(on)
, t
r
Fig. 20 -
Test Waveforms for Circuit of Fig. 17,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
GA100TS60U
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9
V g
G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 22.
Pulsed Collector Current
Test Circuit
R
L
=
480V
4 X I
C
@25C
0 - 480V
Figure 21.
Macro Waveforms for
Figure 17's
Test Circuit
GA100TS60U
10
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Case Outline -- INT-A-PAK
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature.
R
See fig. 17
S
For screws M5x0.8
T
Pulse width 80s; single shot.
Dimensions are shown in millimeters (inches)
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Data and specifications subject to change without notice. 4/00
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