www.docs.chipfind.ru
11/06/01
GA150KS61U
IGBT INT-A-PAK
Features
V
CES
=
600
V
V
CE
(on) typ.
= 1.7V
@V
GE
=
15V
,
I
C
=
150A
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case - IGBT
--
0.28
R
JC
Thermal Resistance, Junction-to-Case - Diode
--
0.35
C/W
R
CS
Thermal Resistance, Case-to-Sink - Module
0.1
--
Mounting Torque, Case-to-Heatsink
--
4.0
N m
Mounting Torque, Case-to-Terminal 1, 2 & 3
--
3.0
Weight of Module
200
--
g
Thermal / Mechanical Characteristics
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
150
I
CM
Pulsed Collector Current
300
A
I
LM
Peak Switching Current
300
I
FM
Peak Diode Forward Current
300
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
P
D
@ T
C
= 25C
Maximum Power Dissipation
440
W
P
D
@ T
C
= 85C
Maximum Power Dissipation
230
T
J
Operating Junction Temperature Range
-40 to +150
C
T
STG
Storage Temperature Range
-40 to +125
Benefits
.
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED
TM
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Generation 4 IGBT technology
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
www.irf.com
1
PD -94346
1
2
3
6
7
Low Side Switch Chopper Module
Ultra-Fast
TM
Speed IGBT
GA150KS61U
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
624
937
V
CC
= 400V
Q
ge
Gate - Emitter Charge (turn-on)
--
121
182
nC
I
C
= 94A
Q
gc
Gate - Collector Charge (turn-on)
--
212
317
T
J
= 25C
t
d(on)
Turn-On Delay Time
--
241
--
R
G1
= 27
, R
G2
= 0
,
t
r
Rise Time
--
145
--
ns
I
C
= 150A
t
d(off)
Turn-Off Delay Time
--
336
--
V
CC =
360V
t
f
Fall Time
--
227
--
V
GE
= 15V
E
on
Turn-On Switching Energy
--
6.0
--
mJ
E
off (1)
Turn-Off Switching Energy
--
12
--
E
ts (1)
Total Switching Energy
--
19
33
C
ies
Input Capacitance
--
13878
--
V
GE
= 0V
C
oes
Output Capacitance
--
867
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
181
--
= 1 MHz
t
rr
Diode Reverse Recovery Time
--
139
--
ns
I
C
= 150A
I
rr
Diode Peak ReverseCurrent
--
100
--
A
R
G1
= 27
Q
rr
Diode Recovery Charge
--
6938
--
nC
R
G2
= 0
di
(rec)
M
/dt
Diode Peak Rate of Fall of Recovery
--
4682
--
A/s
V
CC =
360V
During t
b
di/dt =1400A/s
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
GE
= 0V, I
C
= 1mA
V
CE(on)
Collector-to-Emitter Voltage
--
1.7
2.3
V
GE
= 15V, I
C
= 150A
--
1.7
--
V
V
GE
= 15V, I
C
= 150A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
I
C
= 750A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= V
GE
, I
C
= 750A
g
fe
Forward Transconductance
--
152
--
S
V
CE
= 25V, I
C
= 150A
I
CES
Collector-to-Emitter Leaking Current
--
--
1.0
mA
V
GE
= 0V, V
CE
= 600V
--
--
10
V
GE
= 0V, V
CE
= 600V, T
J
= 125C
V
FM
Diode Forward Voltage - Maximum
--
1.4
2.0
V
I
F
= 150A, V
GE
= 0V
--
1.4
--
I
F
= 150A, V
GE
= 0V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
--
--
250
nA
V
GE
= 20V
Dynamic Characteristics - T
J
= 125C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
GA150KS61U
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3
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
25V
10
100
1000
1
2
3
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 125 C
J
o
1
10
100
1000
5
6
7
8
9
V , Gate-to-Emitter Voltage (V)
I , C
o
lle
cto
r-to
-
E
m
itte
r C
u
rre
n
t
(A
)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 125 C
J
o
V
CE
= 25V
80s PULSE WIDTH
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 3 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
40
80
120
160
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Col
l
e
ctor-to-Emi
tter Vol
t
age(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
75
C
I = A
150
C
I = A
300
C
GA150KS61U
4
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Fig. 5 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 6 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
10
100
0
5000
10000
15000
20000
25000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
C
ies
C
oes
C
res
0
100
200
300
400
500
600
700
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 94A
CC
C
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
1
th
J
C
t , Rectangular Pulse Duration (Seconds)
D = 0.50
Single Pulse
(Thermal Resistance)
T
h
e
r
m
a
l
I
m
peda
n
c
e -
Z
0.01
0.20
0.10
0.05
0.02
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
GA150KS61U
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5
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
0
10
20
30
40
50
RG, Gate Resistance (
)
10
15
20
25
30
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
VCC = 360V
VGE = 15V
TJ = 125C
I C = 1500A
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (C)
1
10
100
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
RG1 = 27
, RG2 = 0
VGE = 15V
VCC = 360V
IC = 300A
IC = 150A
IC = 75A
0
50
100
150
200
250
300
IC, Collector Current (A)
0
10
20
30
40
50
T
o
t
a
l
S
w
i
t
c
h
i
n
g
L
o
s
s
e
s
(
m
J
)
RG1 = 27
, RG2 = 0
TJ = 150C
VGE = 15V
VCC = 360V
Fig. 11 - Reverse Bias SOA
0
100
200
300
400
500
600
700
VCE, Collector-to-Emitter Voltage (V)
0
100
200
300
400
I C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
VGE = 20V
TJ = 125
VCE measured at terminal (Peak Voltage)
SAFE OPERATING AREA
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