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Электронный компонент: GA200HS60S

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1
GA200HS60S
Bulletin I27121 rev. B 07/02
V
CES
= 600V
V
CE(on) typ.
= 1.19V @
V
GE
= 15V, I
C
= 200A
T
J
= 25C
"HALF-BRIDGE" IGBT INT-A-PAK
Standard Speed IGBT
Absolute Maximum Ratings
V
CES
Collector-to-Emitter Voltage
600
V
I
C
Continuos Collector Current
@ T
C
= 25C
470
A
@ T
C
= 110C
200
I
CM
Pulsed Collector Current
800
I
LM
Peak Switching Current
800
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation
@ T
C
= 25C
830
W
@ T
C
= 85C
430
Parameters
Max
Units
Generation 4 IGBT Technology
Standard speed: optimized for hard switching
operating frequencies up to 1000 Hz
Very Low Conduction Losses
Industry standard package
Features
Increased operating efficiency
Direct mounting to heatsink
Performance optimized as output inverter stage
for TIG welding machines
Benefits
INT-A-PAK
www.irf.com
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GA200HS60S
Bulletin I27121 rev. B 07/02
2
www.irf.com
T
J
Operating Junction Temperature Range
- 40
150
C
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
0.15
C/ W
R
thCS
Case-to-Sink
0.1
T
Mounting torque
Case to heatsink
4
Nm
Case to terminal 1, 2, 3
3
Weight
185
g
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 1mA
V
CE(on)
Collector-to-Emitter Voltage
1.19
1.25
V
GE
= 15V, I
C
= 200A
1.17
-
V
GE
= 15V, I
C
= 200A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3
6
I
C
= 0.5mA
I
CES
Collector-to-Emiter Leakage
1
mA
V
GE
= 0V, V
CE
= 600V
Current
10
V
GE
= 0V, V
CE
= 600V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
250
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Total Gate Charge
1600 1700
nC
I
C
= 200A
Q
ge
Gate-Emitter Charge
260
340
V
CC
= 400V
Q
gc
Gate-Collector Charge
580
670
V
GE
= 15V
E
on
Turn-On Switching Loss
27
mJ
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
E
off
Turn-Off Switching Loss
47
R
g
= 10
E
ts
Total Switching Loss
74
free-wheeling DIODE: 30ETH06
E
on
Turn-On Switching Loss
29
31
mJ
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
E
off
Turn-Off Switching Loss
77
90
R
g
= 10
E
ts
Total Switching Loss
106
121
free-wheeling DIODE: 30ETH06, T
J
= 125C
C
ies
Input Capacitance
32500
pF
V
GE
= 0V
C
oes
Output Capacitance
2080
V
CC
= 30V
C
res
Reverse Transfer Capacitance
380
f = 1.0 MHz
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Thermal- Mechanical Specifications
Parameters
Min
Typ
Max
Units
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Bulletin I27121 rev. B 07/02
3
GA200HS60S
www.irf.com
Fig. 1 - Typical Output Characteristics
I
C
, Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
I
C
, Collector-to-Emitter Current (A)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
V
CE
, Collector-to-Emitter Voltage (V)
T
J
, Junction Temperature (C)
Fig. 3 - Maximum Collector Current vs.
Case Temperature
Maximum DC Collector Current (A)
T
C
, Case Temperature (C)
10
100
1000
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Vge = 15V
T = 25C
T = 125C
J
J
1
10
100
1000
5
6
7
8
Vce = 10V
380s PULSE WIDTH
T = 25C
T = 125C
J
J
0.5
1
1.5
2
20
40
60
80
100 120 140 160
I = 400A
I = 200A
I = 120A
C
C
C
0
40
80
120
160
200
240
280
320
360
400
440
480
520
25
50
75
100
125
150
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GA200HS60S
Bulletin I27121 rev. B 07/02
4
www.irf.com
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
V
GE
, Gate-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
0
4
8
12
16
0
300
600
900 1200 1500 1800
Vcc = 400V
Ic = 200A
Fig. 6 - Typical Switching Losses vs Gate
Resistance
Switching Losses (mJ)
R
G
, Gate Reistance (
)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
Switching Losses (mJ)
I
C
, Collector-to-Emitter Current (A)
0
10
20
30
40
50
60
70
80
0
40
80
120
160
200
Eon
Eoff
Tj = 125C
Vce = 480V
Vge = 15V
Rge = 10
Free-wheeling diode:
30ETH06
10
20
30
40
50
60
70
80
0
10
20
30
40
50
Eoff
Eon
Tj = 25C, Vce = 480V
Vge = 15V, Ic = 200A
free-wheeling diode: 30ETH06
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Bulletin I27121 rev. B 07/02
5
GA200HS60S
www.irf.com
Outline Table
Dimensions in millimeters
Electrical Diagram
Functional Diagram
Note: terminals 9 and 11 are not internally connected
terminals 8 and 10 are not assembled in the package