Parameter
Max.
Units
V
CES
Collector-to-Emitter Breakdown Voltage
600
V
I
C
@ T
C
= 25C
Continuous Collector Current
200
I
C
@ T
C
= 100C
Continuous Collector Current
100
A
I
CM
Pulsed Collector Current
Q
400
I
LM
Clamped Inductive Load Current
R
400
V
GE
Gate-to-Emitter Voltage
20
V
E
ARV
Reverse Voltage Avalanche Energy
S
155
mJ
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t=1 min
2500
P
D
@ T
C
= 25C
Maximum Power Dissipation
630
P
D
@ T
C
= 100C
Maximum Power Dissipation
250
T
J
Operating Junction
-55 to + 150
T
STG
Storage Temperature Range
-55 to + 150
Mounting Torque, 6-32 or M3 Screw
12 lbf in(1.3Nm)
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
0.20
R
CS
Case-to-Sink, Flat, Greased Surface
0.05
Wt
Weight of Module
30
gm
/) 5)$5
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD- 50070A
E
C
G
n-channel
Features
Features
Features
Features
Features
Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
Lowest conduction losses available
Fully isolated package ( 2,500 volt AC)
Very low internal inductance ( 5 nH typ.)
Industry standard outline
Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
Easy to assemble and parallel
Direct mounting to heatsink
Plug-in compatible with other SOT-227 packages
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.10V
@V
GE
= 15V, I
C
= 100A
Thermal Resistance
Absolute Maximum Ratings
W
4/24/2000
C
V
C/W
S O T -2 2 7
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1
GA200SA60S
2
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Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
--
--
V
V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
--
--
V
V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
--
0.62
--
V/C
V
GE
= 0V, I
C
= 1.0mA
--
1.10
1.3
I
C
= 100A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
--
1.33
--
I
C
= 200A
See Fig.2, 5
--
1.02
--
I
C
= 100A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-10
--
mV/C V
CE
= V
GE
, I
C
= 2 mA
g
fe
Forward Transconductance
U
90
150
--
S
V
CE
= 100V, I
C
= 100A
--
--
1.0
V
GE
= 0V, V
CE
= 600V
--
--
10
V
GE
= 0V, V
CE
= 10V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
--
--
250
n A
V
GE
= 20V
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
770 1200
I
C
= 100A
Q
ge
Gate - Emitter Charge (turn-on)
--
100
150
nC
V
CC
= 400V
See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)
--
260
380
V
GE
= 15V
t
d(on)
Turn-On Delay Time
--
78
--
t
r
Rise Time
--
56
--
T
J
= 25C
t
d(off)
Turn-Off Delay Time
--
890 1300
I
C
= 100A, V
CC
= 480V
t
f
Fall Time
--
390
580
V
GE
= 15V, R
G
= 2.0
E
on
Turn-On Switching Loss
--
0.98
--
Energy losses include "tail"
E
off
Turn-Off Switching Loss
--
17.4
--
mJ
See Fig. 9, 10, 13
E
ts
Total Switching Loss
--
18.4 25.5
t
d(on)
Turn-On Delay Time
--
72
--
T
J
= 150C,
t
r
Rise Time
--
60
--
I
C
= 100A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time
--
1500
--
V
GE
= 15V, R
G
= 2.0
t
f
Fall Time
--
660
--
Energy losses include "tail"
E
ts
Total Switching Loss
--
35.7
--
mJ
See Fig. 10,11, 13
L
E
Internal Emitter Inductance
--
5.0
--
nH
Between lead,
and center of the die contact
C
ies
Input Capacitance
--
16250
--
V
GE
= 0V
C
oes
Output Capacitance
--
1040
--
pF
V
CC
= 30V
See Fig. 7
C
res
Reverse Transfer Capacitance
--
190
--
= 1.0MHz
T
Pulse width
80s; duty factor 0.1%.
U
Pulse width 5.0s, single shot.
Notes:
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 15 )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 2.0
,
(See fig. 14)
S
Repetitive rating; pulse width limited by maximum
junction temperature.
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
mA
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
GA200SA60S
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3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Load Current ( A )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
0.5
1.0
1.5
2.0
2.5
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
T = 150 C
J
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
0 . 1
1
1 0
1 0 0
f, Frequency (kHz)
A
6 0 % o f ra t e d
v o lt a g e
Id e al d io de s
S q u a re wave :
F o r b o t h :
D u ty c yc le : 50 %
T = 12 5 C
T = 9 0 C
G a te drive as sp e c ifie d
s in k
J
T ria n g u la r w a ve :
C la m p vo l ta g e :
8 0 % o f r a te d
P o w e r D is s ip a t io n = 1 4 0 W
10
100
1000
5
6
7
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
T = 150 C
J
GA200SA60S
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25
50
75
100
125
150
0
50
100
150
200
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
400
C
I = A
200
C
I = A
100
C
GA200SA60S
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1
10
100
0
6000
12000
18000
24000
30000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
50
18
19
20
21
22
23
24
25
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 200A
CC
GE
J
C
( )
-60 -40 -20
0
20
40
60
80 100 120 140 160
10
100
1000
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
400
C
I = A
200
C
I = A
100
C
R
G
= 2.0
350A
0
200
400
600
800
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 110A
CC
C
100A
GA200SA60S
6
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100
150
200
250
300
350
0
40
80
120
160
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
1
10
100
1000
1
10
100
1000
V = 20V
T = 125 C
GE
J
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
R
G
= 2.0
GA200SA60S
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7
480V
4
X
I
C
@
25C
D .U .T.
5 0V
L
V *
C
Q
R
* Driver s am e ty pe as D .U .T .; Vc = 80% o f V ce (m ax )
* No te: D ue to th e 50V p ow er s up p ly, p ulse w id th a nd ind u ctor
w ill inc rea se to o b ta in ra ted Id.
1 00 0V
Fig. 13a -
Clamped Inductive
Load Test Circuit
Fig. 13b -
Pulsed Collector
Current Test Circuit
4 80 F
9 60 V
0 - 480V
R
L
=
t=5 s
d (o n )
t
t
f
t
r
90 %
t
d (o ff)
10 %
90 %
1 0%
5 %
V
C
I
C
E
o n
E
o ff
ts o n o ff
E = (E +E )
Q
R
S
Fig. 14b -
Switching Loss
Waveforms
5 0 V
D riv er*
10 00 V
D .U .T.
I
C
C
V
Q
R
S
L
Fig. 14a -
Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
GA200SA60S
8
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4 .4 0 (.17 3 )
4 .2 0 (.16 5 )
1 2.50 ( .4 92 )
7 .50 ( .29 5 )
2 .1 0 ( .0 82 )
1 .9 0 ( .0 75 )
3 0 .2 0 ( 1 .1 89 )
2 9 .8 0 ( 1 .1 73 )
8.10 ( .3 19 )
7.70 ( .3 03 )
4 X
1 5.00 ( .5 90 )
R F U L L
2 .10 ( .08 2 )
1 .90 ( .07 5 )
0.1 2 ( .00 5 )
-C -
0 .25 ( .01 0 ) M C A M B M
2 5 .7 0 ( 1.0 12 )
2 5 .2 0 ( .9 9 2 )
-B -
6.2 5 ( .24 6 )
C H A M F E R
2 .0 0 ( .0 7 9 ) X 45 7
-A -
3 8 .3 0 ( 1.5 08 )
3 7 .8 0 ( 1.4 88 )
12 .3 0 ( .4 84 )
11 .8 0 ( .4 64 )
4
1
3
2
L E A D A S S IG M E N T S
IG B T
E
C
G
E
S
D
G
S
H E X F E T
A 1
K 2
K 1
A 2
3
2
4
1
3
2
4
1
H E X F R E D
E
SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
E
C
IGBT
G
Tube
QUANTITIES PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
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