05/14/02

GA300TD60U

"HALF-BRIDGE" IGBT DUAL INT-A-PAK

Features

CES

600

(on) typ.

= 1.80V

15V

300A

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case - IGBT

0.14

Thermal Resistance, Junction-to-Case - Diode

0.20

°C/W

Thermal Resistance, Case-to-Sink - Module

0.1

Mounting Torque, Case-to-Heatsink

6.0

N m

Mounting Torque, Case-to-Terminal 1, 2 & 3

5.0

Weight of Module

400

Thermal / Mechanical Characteristics

Ultra-Fast

Speed IGBT

Absolute Maximum Ratings

Parameter

Max.

Units

CES

Collector-to-Emitter Voltage

600

@ T

= 25°C

Continuous Collector Current

300

Pulsed Collector Current·

600

Peak Switching Current,

600

Peak Diode Forward Current

600

Gate-to-Emitter Voltage

±20

ISOL

RMS Isolation Voltage, Any Terminal To Case, t = 1 min

2500

@ T

= 25°C

Maximum Power Dissipation

880

@ T

= 85°C

Maximum Power Dissipation

460

Operating Junction Temperature Range

-40 to +150

°C

STG

Storage Temperature Range

-40 to +125

· UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
· Very low conduction and switching losses
· HEXFRED

antiparallel diodes with ultra- soft

recovery
· Industry standard package
· UL approved

Benefits

· Increased operating efficiency
· Direct mounting to heatsink
· Performance optimized for power conversion: UPS,
SMPS, Welding
· Lower EMI, requires less snubbing

· Generation 4 IGBT technology

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PD -50057E

GA300TD60U

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Parameter

Min. Typ. Max. Units

Conditions

Total Gate Charge (turn-on)

1249 1873

= 400V

Gate - Emitter Charge (turn-on)

173

260

= 187A

Gate - Collector Charge (turn-on)

423

635

= 25°C

d(on)

Turn-On Delay Time

645

= 27

, R

= 0

Rise Time

282

= 300A

d(off)

Turn-Off Delay Time

418

CC =

360V

Fall Time

220

= ±15V

Turn-On Switching Energy

See Fig.17 through Fig.19

off

Turn-Off Switching Energy

Total Switching Energy

ies

Input Capacitance

27755

= 0V

oes

Output Capacitance

1735

= 30V

res

Reverse Transfer Capacitance

361

= 1 MHz

Diode Reverse Recovery Time

200

= 300A

Diode Peak ReverseCurrent

128

= 27

Diode Recovery Charge

12771

= 0

(rec)

/dt

Diode Peak Rate of Fall of Recovery

1691

A/µs

CC =

360V

During t

di/dt =1300A/µs

Parameter

Min. Typ. Max. Units

Conditions

(BR)CES

Collector-to-Emitter Breakdown Voltage

600

= 0V, I

= 1mA

CE(on)

Collector-to-Emitter Voltage

1.8

2.3

= 15V, I

= 300A

1.9

= 15V, I

= 300A, T

= 125°C

GE(th)

Gate Threshold Voltage

3.0

6.0

= 1.75mA

GE(th)

Temperature Coeff. of Threshold Voltage

-11

mV/°C V

= V

, I

= 1.75mA

Forward Transconductance ,,

269

= 25V, I

= 300A

CES

Collector-to-Emitter Leaking Current

1.0

= 0V, V

= 600V

= 0V, V

= 600V, T

= 125°C

Diode Forward Voltage - Maximum

3.3

= 300A, V

= 0V

3.2

= 300A, V

= 0V, T

= 125°C

GES

Gate-to-Emitter Leakage Current

400

= ±20V

Dynamic Characteristics - T

= 125°C (unless otherwise specified)

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

GA300TD60U

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0.1

100

120

160

200

f, Frequency (KHz)

LOAD CURRENT (A)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

RMS

of fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

For both:

D uty cy cle : 5 0 %
T = 12 5 °C
T = 90 °C
G a te d rive a s sp e cifie d

s in k

P ow e r Dis sip ation = W

60 % of ra ted
vo ltag e

Id e a l d io d e s

S q u a re w a v e :

150

100

1000

0.5

1.0

1.5

2.0

2.5

3.0

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 15V
80µs PULSE WIDTH

T = 25 C

T = 125 C

100

1000

5.0

6.0

7.0

8.0

9.0

V , Gate-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 25V
80µs PULSE WIDTH

T = 25 C

T = 125 C

GA300TD60U

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

-60 -40 -20

80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

V = 15V
80 us PULSE WIDTH

I = A

600

I = A

300

I = A

150

100

125

150

100

200

300

400

T , Case Temperature ( C)

Maximum DC Collector Current(A)

0 . 0 1

0 . 1

0 . 0 0 0 1

0 . 0 0 1

0 . 0 1

0 . 1

1 0

1 0 0

1 0 0 0

t , R e cta n g u la r P u lse D u ra tio n (S e co n ds )

D = 0.5 0

S in g le P u ls e
(T h e r m a l R e sista n c e )

0.0 1

0 .0 2

0.0 5

0 .1 0

0 .2 0

her

l
I

pedanc

e -

Notes:
1. Duty factor D = t / t

2. Peak T = P x Z + T

thJC

GA300TD60U

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Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

-60 -40 -20

80 100 120 140 160

100

1000

T , Junction Temperature ( C )

Total Switching Losses (mJ)

R = Ohm
V = 15V
V = 360V

GE
CC

I = A

600

I = A

300

I = A

150

=27

= 0

200

400

600

800

1000

1200

1400

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

= 400V

= 187A

100

10000

20000

30000

40000

50000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GE
ies

gc ,

res

oes

Cres

Coes

Cies

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

V = 360V
V = 15V
T = 125 C

I = 300A

CC
GE

J
C

, Gate Resistance

( )

125°C

GA300TD60U

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Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Reverse Bias SOA

Fig. 13 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 14 - Typical Stored Charge vs. di

/dt

100

200

300

400

500

600

100

120

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

R = Ohm
T = 125 C
V = 360V
V = 15V

G
J

CC
GE

=27

= 0

2 0 0

4 0 0

6 0 0

8 0 0

2 0 0

4 0 0

6 0 0

8 0 0

C E

SAFE OPER AT IN G AR EA

V = 20V
T = 125°C

G E

V , Collector-to-Em itter V oltage (V)

, Collector-to-Emitter Current ( A )

measured at terminal (Peak Voltage)

100

1000

1.0

2.0

3.0

4.0

5.0

I
n

t
ant

ane

ous

r
w

d C

r
r
ent

(
A

)

F o rwa rd V o lta g e D ro p - V (V )

T = 1 2 5 °C

T = 2 5 °C

5 0 0 0

1 0 0 0 0

1 5 0 0 0

2 0 0 0 0

2 5 0 0 0

5 0 0

1 0 0 0

1 5 0 0

2 0 0 0

d i /dt - (A /µs)

(
n

)

I = 6 00 A

I = 30 0A

I = 15 0A

V = 36 0 V
T = 12 5 °C
T = 25 °C

GA300TD60U

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Fig. 15 - Typical Reverse Recovery vs. di

/dt

Fig. 16 - Typical Recovery Current vs. di

/dt

1 0 0

1 5 0

2 0 0

2 5 0

3 0 0

5 0 0

1 0 0 0

1 5 0 0

2 0 0 0

d i /d t - (A /µ s)

(
n

)

I = 60 0A

I = 15 0 A

I = 3 00 A

V = 36 0 V
T = 12 5 °C
T = 25 °C

5 0

1 0 0

1 5 0

2 0 0

2 5 0

5 0 0

1 0 0 0

1 5 0 0

2 0 0 0

d i /d t - (A /µ s )

(

)

I = 60 0A

I = 30 0A

I = 1 5 0A

V = 3 6 0 V
T = 1 2 5 °C
T = 2 5 ° C

GA300TD60U

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V c e

9 0 % Ic

1 0 % V c e

td (o ff)

5 % Ic

t1 + 5 µ S

V c e ic d t

9 0 % V g e

+ V g e

E o f f =

Fig. 17b -

Test Waveforms for Circuit of Fig. 18a, Defining

off

, t

d(off)

, t

V ce ie d t

5 % V c e

Ip k

V c c

1 0 % Ic

V c e

D U T V O L T A G E
A N D C U R R E N T

G A T E V O L T A G E D .U .T .

+ V g

1 0 % +V g

9 0 % Ic

td (o n )

D IO D E R E V E R S E
R E C O V E R Y E N E R G Y

E o n =

E re c =

V d id d t

D IO D E R E C O V E R Y
W A V E F O R M S

V p k

1 0 % V c c

Irr

1 0 % Irr

V cc

trr

Q rr =

trr

id d t

Fig. 17a -

Test Circuit for Measurement of

, E

off(diode)

, t

, Q

, I

, t

d(on)

, t

d(off)

, t

Fig. 17c -

Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

Fig. 17d -

Test Waveforms for Circuit of Fig. 18a,

Defining E

rec

, t

, Q

, I

Vd Ic dt

Vce Ic dt

Ic dt

Vce Ic dt

GA300TD60U

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V g

G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

D . U . T .

V *

5 0 V

1 0 0 0 V

6 0 0 0 µ F
1 0 0 V

Figure 18. Clamped Inductive Load Test Circuit

Figure 19. Pulsed Collector Current

Test Circuit

480V

4 X I

@25°C

0 - 480V

Figure 17e. Macro Waveforms for

Figure 17a's

Test Circuit

GA300TD60U

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Case Outline -- DUAL INT-A-PAK

Notes:

Repetitive rating; V

= 20V, pulse width limited by

max. junction temperature.

See fig. 17

For screws M6.

Pulse width 80µs; single shot.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.05/02

104.50
103.50

[

4.114
4.075

]

5.50
4.50

[

.217

.177

]

6
7

8.00
6.60

[

.315
.260

]

24.00
23.00

[

.945
.906

]

28.60
27.40

[

1.126
1.079

]

93.30
92.70

[

3.673
3.650

]

107.30
106.30

[

4.224
4.185

]

15.59
14.39

[

.614
.567

]

6.60
5.40

[

.260
.213

]

48.50
47.50

[

1.909
1.870

]

48.30
47.70

[

1.902
1.878

]

3X M6

8 [.314]

MAX.

4X Ø

6.80
6.20

[

.267

.244

]

0.15 [.0059] CONVEX

59.50
58.50

[

2.343
2.303

]

62.70
61.70

[

2.468
2.429

]

31.00
29.60

[

1.220
1.165

]

2. CONT ROLLING DIMENS ION: MILLIMETER.

1. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].

NOT ES:

4X FAS T ON TAB (110)

2.8 x 0.5 [.110 x .020]

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: GA300TD60U

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: GA300TD60U