4/24/2000
GA50TS120U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
V
CES
=
1200
V
V
CE
(on) typ.
= 2.4V
@V
GE
=
15V
,
I
C
=
50A
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case - IGBT
--
0.44
R
JC
Thermal Resistance, Junction-to-Case - Diode
--
0.70
C/W
R
CS
Thermal Resistance, Case-to-Sink - Module
0.1
--
Mounting Torque, Case-to-Heatsink
--
4.0
N m
Mounting Torque, Case-to-Terminal 1, 2 & 3
--
3.0
Weight of Module
200
--
g
Thermal / Mechanical Characteristics
Ultra-Fast
TM
Speed IGBT
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@ T
C
= 25C
Continuous Collector Current
50
I
CM
Pulsed Collector Current
100
A
I
LM
Peak Switching Current
100
I
FM
Peak Diode Forward Current
100
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
P
D
@ T
C
= 25C
Maximum Power Dissipation
280
W
P
D
@ T
C
= 85C
Maximum Power Dissipation
145
T
J
Operating Junction Temperature Range
-40 to +150
C
T
STG
Storage Temperature Range
-40 to +125
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED
TM
antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Benefits
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
PD - 50064A
Generation 4 IGBT technology
.
www.irf.com
1
GA50TS120U
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Q
g
Total Gate Charge (turn-on)
--
397
596
V
CC
= 400V
Qge
Gate - Emitter Charge (turn-on)
--
67
100
nC
I
C
= 60A
Q
gc
Gate - Collector Charge (turn-on)
--
132
197
T
J
= 25C
t
d(on)
Turn-On Delay Time
--
74
--
R
G1
= 15
, R
G2
= 0
,
t
r
Rise Time
--
82
--
ns
I
C
= 50A
t
d(off)
Turn-Off Delay Time
--
313
--
V
CC =
720V
t
f
Fall Time
--
327
--
V
GE
= 15V
E
on
Turn-On Switching Energy
--
6.0
--
mJ
Inductor load
E
off (1)
Turn-Off Switching Energy
--
10
--
E
ts (1)
Total Switching Energy
--
16
24
C
ies
Input Capacitance
--
8933
--
V
GE
= 0V
C
oes
Output Capacitance
--
397
--
pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance
--
77
--
= 1 MHz
t
rr
Diode Reverse Recovery Time
--
141
--
ns
I
C
= 50A
I
rr
Diode Peak ReverseCurrent
--
66
--
A
R
G1
= 15
Q
rr
Diode Recovery Charge
--
4616
--
nC
R
G2
= 0
di
(rec)
M
/dt
Diode Peak Rate of Fall of Recovery
--
999
--
A/s
V
CC =
720V
During t
b
di/dt = 1200A/s
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
--
--
V
GE
= 0V, I
C
= 1mA
V
CE(on)
Collector-to-Emitter Voltage
--
2.4
3.0
V
GE
= 15V, I
C
= 50A
--
2.2
--
V
V
GE
= 15V, I
C
= 50A, T
J
= 125C
V
GE(th)
Gate Threshold Voltage
3.0
--
6.0
V
CE
= 6.0V, I
C
= 500A
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
--
-11
--
mV/C V
CE
= 6.0V, I
C
= 500A
g
fe
Forward Transconductance
--
72
--
S
V
CE
= 25V, I
C
= 50A
I
CES
Collector-to-Emitter Leaking Current
--
--
1.0
mA
V
GE
= 0V, V
CE
= 1200V
--
--
10
V
GE
= 0V, V
CE
= 1200V, T
J
= 125C
V
FM
Diode Forward Voltage - Maximum
--
2.9
4.1
V
I
F
= 50A, V
GE
= 0V
--
2.7
--
I
F
= 50A, V
GE
= 0V, T
J
= 125C
I
GES
Gate-to-Emitter Leakage Current
--
--
250
nA
V
GE
= 20V
Dynamic Characteristics - T
J
= 125C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
GA50TS120U
www.irf.com
3
0.1
1
10
100
0
10
20
30
40
50
60
f, Frequency (KHz)
LOAD CURRENT (A)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
For both:
D uty cy cle : 5 0 %
T = 12 5 C
T = 90 C
G a te d rive a s sp e cifie d
s in k
J
P ow e r Dis sip ation = W
60 % of ra ted
vo ltag e
I
Id e a l d io d e s
S q u a re w a v e :
65
10
100
1.5
2.0
2.5
3.0
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
V = 15V
80s PULSE WIDTH
GE
T = 25 C
J
T = 125 C
J
1
10
100
1000
4.0
5.0
6.0
7.0
8.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 25V
80s PULSE WIDTH
CE
T = 25 C
J
T = 125 C
J
GA50TS120U
4
www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
1.0
2.0
3.0
4.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
CE
V = 15V
80 us PULSE WIDTH
GE
I = A
100
C
I = A
50
C
I = A
25
C
25
50
75
100
125
150
0
10
20
30
40
50
60
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
0 . 0 1
0 . 1
1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
1
th
J
C
D = 0 .50
0.01
0.02
0 .05
0 .10
0 .20
S IN G LE P U L S E
(T HE R M A L RE S P O N S E )
T
h
e
r
m
a
l
R
e
sp
o
n
se
(
Z
)
t , R ecta ngu la r P ulse D u ration (se c)
A
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
2
J
DM
thJC
C
GA50TS120U
www.irf.com
5
0
10
20
30
40
50
14
16
18
20
22
24
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 720V
V = 15V
T = 125 C
I = 50A
CC
GE
J
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
( )
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
R = Ohm
V = 15V
V = 720V
G
GE
CC
I = A
100
C
I = A
50
C
I = A
25
C
R
G1
=15
;R
G2
= 0
0
100
200
300
400
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V
= 400V
I
= 50A
CC
C
1
10
100
0
4000
8000
12000
16000
20000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cres
Coes
Cies
GA50TS120U
6
www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Reverse Bias SOA
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. di
f
/dt
Instantaneous Forward Current - I
F
( A )
Q
RR
- ( nC)
0
20
40
60
80
100
120
0
10
20
30
40
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 720V
V = 15V
G
J
CC
GE
R
G1
=15
;R
G2
= 0
T
C
= 125C
0
200
400
600
800
1000
1200
1400
0
20
40
60
80
100
120
140
V = 20V
T = 125 C
V measured at terminal(Peak Voltage)
GE
J
CE
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
1 0
1 0 0
1 . 0
2 . 0
3 . 0
4 . 0
FM
F o rw a rd V o lta g e D ro p - V (V )
T = 125C
T = 25C
J
J
0
2 0 0 0
4 0 0 0
6 0 0 0
8 0 0 0
1 0 0 0 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
I = 1 00 A
I = 5 0A
I = 25 A
R
J
J
F
F
F
V = 72 0 V
T = 12 5 C
T = 25 C
di /dt - (A /s)
GA50TS120U
www.irf.com
7
Fig. 15 - Typical Reverse Recovery vs. di
f
/dt
Fig. 16 - Typical Recovery Current vs. di
f
/dt
trr - ( ns )
I
RRM
- ( A )
4 0
8 0
1 2 0
1 6 0
2 0 0
2 4 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
I = 10 0A
I = 5 0A
I = 25 A
R
J
J
F
F
F
di /dt - (A /s)
V = 7 2 0V
T = 1 25 C
T = 2 5C
2 0
4 0
6 0
8 0
1 0 0
1 2 0
5 0 0
1 0 0 0
1 5 0 0
2 0 0 0
f
di /dt - (A /s)
I = 1 00 A
I = 50 A
I = 2 5A
R
J
J
F
F
F
V = 7 2 0V
T = 1 25 C
T = 2 5C
GA50TS120U
8
www.irf.com
t1
Ic
V c e
t1
t2
9 0 % Ic
1 0 % V c e
td (o ff)
tf
Ic
5 % Ic
t1 + 5 S
V c e ic d t
9 0 % V g e
+ V g e
E o f f =
Fig. 17b -
Test Waveforms for Circuit of Fig. 18a, Defining
E
off
, t
d(off)
, t
f
V ce ie d t
t2
t1
5 % V c e
Ic
Ip k
V c c
1 0 % Ic
V c e
t1
t2
D U T V O L T A G E
A N D C U R R E N T
G A T E V O L T A G E D .U .T .
+ V g
1 0 % +V g
9 0 % Ic
tr
td (o n )
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
tx
E o n =
E re c =
t4
t3
V d id d t
t4
t3
D IO D E R E C O V E R Y
W A V E F O R M S
Ic
V p k
1 0 % V c c
Irr
1 0 % Irr
V cc
trr
Q rr =
trr
tx
id d t
Fig. 17a -
Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 17c -
Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 17d -
Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
GA50TS120U
www.irf.com
9
V g
G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
D . U . T .
V *
c
5 0 V
L
1 0 0 0 V
6 0 0 0 F
1 0 0 V
Figure 18. Clamped Inductive Load Test Circuit
Figure 19. Pulsed Collector Current
Test Circuit
R
L
=
600V
4 X I
C
@25C
0 - 600V
Figure 17e. Macro Waveforms for
Figure 18a's
Test Circuit
GA50TS120U
10
www.irf.com
Case Outline -- INT-A-PAK
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature.
See fig. 17
For screws M5x0.8
Pulse width 50s; single shot.
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
PDF 
ZIP