IGBT PIM MODULE

GB25RF120K

PD - 94552

www.irf.com

Features

· Low VCE (on) Non Punch Through IGBT Technology
· Low Diode VF
· 10µs Short Circuit Capability
· Square RBSOA
· HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
· Positive VCE (on) Temperature Coefficient
· Ceramic DBC Substrate
· Low Stray Inductance Design

Benefits

· Benchmark Efficiency for Motor Control

· Rugged Transient Performance

· Low EMI, Requires Less Snubbing

· Direct Mounting to Heatsink

· PCB Solderable Terminals

· Low Junction to Case Thermal Resistance

· UL Listed

ECONO2 PIM

CES

= 1200V

= 25A, T

=80°C

> 10µs, T

=150°C

CE(on)

typ. = 2.40V

10/17/02

Absolute Maximum Ratings (T

=25°C, unless otherwise indicated)

Parameter

Symbol

Test Conditions

Ratings

Units

Inverter

Collector-to-Emitter Voltage

CES

1200

Gate-to-Emitter Voltage

GES

±20

Collector Current

Continuous

25°C / 80°C

40 / 25

25°C

Diode Maximum Forward Current

25°C

Power Dissipation

1 device

25°C

198

Input

Repetitive Peak Reverse Voltage

RRM

1600

Rectifier

Average Output Current

F(AV)

50/60Hz sine pulse

80°C

Surge Current (Non Repetitive)

FSM

250

t (Non Repetitive)

316

Brake

Collector-to-Emitter Voltage

CES

1200

Gate-to-Emitter Voltage

GES

±20

Collector Current

Continuous

25°C / 80°C

25 / 15

25°C

Power Dissipation

1 device

25°C

104

Repetitive Peak Reverse Voltage

RRM

1200

Maximum Operating Junction Temperature

150

°C

Storage Temperature Range

STG

-40 to +125

Isolation Voltage

ISOL

2500

Thermal and Mechanical Characteristics

Parameter

Symbol

Min

Typical

Maximum

Units

Junction-to-Case Inverter IGBT Thermal Resistance

0.63

°C/W

Junction-to-Case Inverter FRED Thermal Resistance

1.0

Junction-to-Case Brake IGBT Thermal Resistance

THJC

1.2

Junction-to-Case Brake Diode Thermal Resistance

2.3

Junction-to-Case Input Rectifier Thermal Resistance

0.85

Mounting Torque (M5)

2.7

3.3

Rated V

RRM

applied, 10ms,

sine pulse

AC(1min.)

GB25RF120K

www.irf.com

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Inverter

CES

Collector-to-Emitter Breakdown Voltage

1200

= 0V, I

= 500µA

IGBT

(BR)CES

Temperature Coeff. of Breakdown Voltage

1.0

V/°C

= 0V, I

= 1mA (25°C-125°C)

CE(on)

Collector-to-Emitter Voltage

2.40

2.70

= 25A, V

= 15V

1,2

2.95

3.30

= 40A, V

= 15V

4,5

2.85

= 25A, V

= 15V, T

= 125°C

3.55

= 40A, V

= 15V, T

= 125°C

GE(th)

Gate Threshold Voltage

4.0

5.0

6.0

= V

, I

= 250µA

3,4,5

GE(th)

Threshold Voltage temp. coefficient

-10

mV/°C V

= V

, I

= 1mA (25°C-125°C)

CES

Zero Gate Voltage Collector Current

100

µA

= 0V, V

= 1200V

750

= 0V, V

= 1200V, T

= 125°C

GES

Gate-to-Emitter Leakage Current

±200

= ±20V

Total Gate Charge (turn-on)

175

265

= 25A

Gate-to-Emitter Charge (turn-on)

17.5

= 400V

CT1

Gate-to-Collector Charge (turn-on)

125

= 15V

Turn-On Switching Loss

2450

4450

= 25A, V

= 600V

CT4

off

Turn-Off Switching Loss

2050

3200

µJ

= 15V, R

= 10

, L = 400µH

tot

Total Switching Loss

4500

7650

= 25°C

Turn-On Switching Loss

3350

5650

= 25A, V

= 600V

9,11

off

Turn-Off Switching Loss

2850

3850

µJ

= 15V, R

= 10

, L = 400µH

CT4

tot

Total Switching Loss

6200

9500

= 125°C

WF1,2

d(on)

Turn-On delay time

104

= 25A, V

= 600V

10,12

Rise time

= 15V, R

= 10

, L = 400µH

CT4

d(off)

Turn-Off delay time

510

1000

= 125°C

WF1

Fall time

230

299

WF2

ies

Input Capacitance

2370

= 0V

oes

Output Capacitance

455

= 30V

res

Reverse Transfer Capacitance

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

= 150°C, I

= 80A

CT2

= 10

, V

= +15V to 0V

= 150°C

CT3

SCSOA

Short Circuit Safe Operating Area

µs

= 900V, V

= 1200V

WF4

= 10

, V

= +15V to 0V

Inverter

= 125°C

13,14,15

FRED

Diode Peak Reverse Recovery Current

= 600V, I

= 25A, L = 400µH

CT4

= 15V, R

= 10

1.90

2.35

= 25A

Diode Forward Voltage Drop

2.25

2.80

= 40A

2.00

= 25A, T

= 125°C

2.45

= 40A, T

= 125°C

GB25RF120K

www.irf.com

Note:

For UL Applications, T

is limited to +125°C. (See File E78996).

Power dependent on temperature. T

not to exceed T

max.

Energy losses include "tail" and diode reverse recovery.

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Input

Maximum Forward Voltage Drop

1.5

= 25A

Rectifier I

Maximum Reverse Leakage Current

0.1

= 25°C, V

= 1600V

1.0

= 150°C, V

= 1600V

Forward Slope Resistance

10.4

= 150°C

F(TO)

Conduction Threshold Voltage

0.85

Brake

CES

Collector-to-Emitter Breakdown Voltage

1200

= 0V, I

= 500µA

IGBT

(BR)CES

Temperature Coeff. of Breakdown Voltage

1.6

V/°C

= 0V, I

= 1mA (25°C-125°C)

CE(on)

Collector-to-Emitter Voltage

2.30

2.50

= 12.5A, V

= 15V

20,21

3.00

3.25

= 25A, V

= 15V

23,24

2.70

= 12.5A, V

= 15V, T

= 125°C

3.70

= 25A, V

= 15V, T

= 125°C

GE(th)

Gate Threshold Voltage

4.0

5.0

6.0

= V

, I

= 250µA

22,23,24

GE(th)

Threshold Voltage temp. coefficient

-10

mV/°C V

= V

, I

= 1mA (25°C-125°C)

CES

Zero Gate Voltage Collector Current

8.0

µA

= 0V, V

= 1200V

370

= 0V, V

= 1200V, T

= 125°C

GES

Gate-to-Emitter Leakage Current

±200

= ±20V

Total Gate Charge (turn-on)

145

= 12.5A

Gate-to-Emitter Charge (turn-on)

= 400V

CT1

Gate-to-Collector Charge (turn-on)

= 15V

Turn-On Switching Loss

1050

1200

= 12.5A, V

= 600V

CT4

off

Turn-Off Switching Loss

750

1000

µJ

= 15V, R

= 22

, L = 400µH

tot

Total Switching Loss

1800

2200

= 25°C

Turn-On Switching Loss

1350

1500

= 12.5A, V

= 600V

28,30

off

Turn-Off Switching Loss

1100

1250

µJ

= 15V, R

= 22

, L = 400µH

CT4

tot

Total Switching Loss

2450

2750

= 125°C

WF3,4

d(on)

Turn-On delay time

= 12.5A, V

= 600V

29,31

Rise time

= 15V, R

= 22

, L = 400µH

CT4

d(off)

Turn-Off delay time

350

400

= 125°C

WF3

Fall time

210

275

WF4

ies

Input Capacitance

2370

= 0V

oes

Output Capacitance

460

= 30V

res

Reverse Transfer Capacitance

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

= 150°C, I

= 50A

CT2

= 22

, V

= +15V to 0V

= 150°C

CT3

SCSOA

Short Circuit Safe Operating Area

µs

= 900V, V

= 1200V

= 22

, V

= +15V to 0V

Brake

Diode Peak Reverse Recovery Current

= 600V, I

= 12.5A, L = 400µH

32,33,34

Diode

= 15V, R

= 22

, T

= 125°C

CT4

1.90

2.10

= 8.0A

Diode Forward Voltage Drop

2.40

2.65

= 16A

2.00

= 8.0A, T

= 125°C

2.65

= 16A, T

= 125°C

NTC

Resistance

4538

5000

5495

= 25°C

468.6 493.3 518.0

= 100°C

B Value

3307

3375

3443

= 25 / 50 °C

GB25RF120K

www.irf.com

Fig. 2 - Typ. IGBT Output Characteristics

= 125°C; tp = 80µs

Fig. 1 - Typ. IGBT Output Characteristics

= 25°C; tp = 80µs

Fig. 4 - Typical V

vs. V

= 25°C

Fig.5 - Typical V

vs. V

= 125°C

Inverter

Fig. 3 - Typ. Transfer Characteristics

= 50V; tp = 10µs

Fig. 6- Typ. Capacitance vs. V

= 0V; f = 1MHz

VGE (V)

(

)

ICE = 12.5A
ICE = 25A
ICE = 50A

VGE (V)

(

)

ICE = 12.5A
ICE = 25A
ICE = 50A

VCE (V)

I C

(

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

VCE (V)

I C

(

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

VGE (V)

100

150

200

250

300

350

I C

(

)

TJ = 25°C

TJ = 125°C

TJ = 25°C

100

VCE (V)

100

1000

10000

i
t
a

(
p

)

Cies

Coes

Cres

GB25RF120K

www.irf.com

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

Inverter

Fig. 7 - Typical Gate Charge

vs. V

= 25A; L = 1mH

100

150

200

Q G, Total Gate Charge (nC)

(

)

400V

600V

0.0

1.0

2.0

3.0

4.0

VF (V)

100

I F

(

)

25°C

125°C

Fig. 9 - Typ. Energy Loss vs. I

= 125°C; L=400µH; V

= 600V,R

= 10

; V

= 15V

IC (A)

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

r
g

(

)

EOFF

EON

Fig. 10 - Typ. Switching Time vs. I

= 125°C; L = 400µH; V

= 600V,R

= 10

= 15V

IC (A)

100

1000

i
c

i
n

i
m

(
n

)

tdOFF

tdON

Fig. 12 - Typ. Switching Time vs. R

= 125°C; L=400µH; V

= 600V, I

= 25A; V

= 15V

RG ()

100

1000

10000

i
c

i
n

i
m

(
n

)

tdOFF

tdON

Fig. 11 - Typ. Energy Loss vs. R

= 125°C; L=400µH; V

= 600V, I

= 25A; V

= 15V

RG ()

1000

2000

3000

4000

5000

6000

r
g

(
µ

)

EON

EOFF

GB25RF120K

www.irf.com

Fig. 13 - Typical Diode I

vs. I

= 125°C

Fig. 14 - Typical Diode I

vs. R

= 125°C; I

= 25A

Inverter

IF (A)

I R

(
A

)

RG = 4.7

RG = 10

RG = 22

RG = 47

RG ()

I R

(
A

)

Fig. 16 - Thermistor Resistance vs. Temperature

Input Rectifier

Fig. 17 - Typ. Diode Forward Characteristics

tp = 80µs

0.0

1.0

2.0

3.0

VF (V)

100

I F

(

)

25°C

125°C

500

1000

1500

diF /dt (A/µs)

I R

(
A

)

Fig. 15 - Typical Diode I

vs. di

/ dt

= 600V; V

= 15V; I

= 25A; T

= 125°C

Thermistor

100 120 140 160 180

TJ , Junction Temperature (°C)

r
m

i
s

t
o

r

R

i
s

t
a

(

)

GB25RF120K

www.irf.com

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter IGBT)

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

r
m

l

R

(

Z

t
h

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

i (sec)

0.120 0.000439

0.201 0.009470

0.309 0.018320

/Ri

Ci=

i/Ri

Inverter

Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (Inverter FRED)

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

r
m

l

R

(

Z

t
h

)

0.20
0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

i (sec)

0.140 0.000230

0.257 0.002752

0.602 0.036788

/Ri

Ci=

i/Ri

Fig. WF1- Typ. Turn-off Loss Waveform

@ T

= 125°C using Fig. CT.4

Fig. WF2- Typ. Turn-on Loss Waveform

@ T

= 125°C using Fig. CT.4

-100

100

200

300

400

500

600

700

800

900

-0.60

-0.10

0.40

0.90

1.40

Time(µs)

)

-5

)

90% I

5% V

5% I

Eoff Loss

-100

100

200

300

400

500

600

700

800

900

9.40

9.60

9.80

10.00 10.20 10.40

Time (µs)

)

-10

)

TEST CURRENT

90% test current

5% V

10% test current

Eon Loss

GB25RF120K

www.irf.com

Fig. 21 - Typ. IGBT Output Characteristics

= 125°C; tp = 80µs

Fig. 20 - Typ. IGBT Output Characteristics

= 25°C; tp = 80µs

Fig. 23 - Typical V

vs. V

= 25°C

Fig.24 - Typical V

vs. V

= 125°C

Brake

Fig. 22 - Typ. Transfer Characteristics

= 50V; tp = 10µs

Fig. 25- Typ. Capacitance vs. V

= 0V; f = 1MHz

VGE (V)

100

120

140

160

180

I C

(

)

TJ = 25°C

TJ = 125°C

TJ = 25°C

VGE (V)

(

)

ICE = 6.25A
ICE = 12.5A
ICE = 25A

VGE (V)

(

)

ICE = 6.25A
ICE = 12.5A
ICE = 25A

VCE (V)

I C

(

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

VCE (V)

I C

(

)

VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V

100

VCE (V)

100

1000

10000

i
t
a

(
p

)

Cies

Coes

Cres

GB25RF120K

www.irf.com

Fig. 27 - Typ. Diode Forward Characteristics

tp = 80µs

Brake

Fig. 26 - Typical Gate Charge

vs. V

= 12.5A; L = 1mH

100

125

Q G, Total Gate Charge (nC)

(

)

400V

600V

Fig. 29 - Typ. Switching Time vs. I

= 125°C; L=400µH; V

= 600V,R

= 22

= 15V

IC (A)

100

1000

i
c

i
n

i
m

(
n

)

tdOFF

tdON

Fig. 28 - Typ. Energy Loss vs. I

= 125°C; L=400µH; V

= 600V,R

= 22

; V

= 15V

Fig. 31 - Typ. Switching Time vs. R

= 125°C; L=400µH; V

= 600V, I

= 12.5A; V

= 15V

100

125

150

RG ()

100

1000

10000

i
c

i
n

i
m

(
n

)

tdOFF

tdON

Fig. 30 - Typ. Energy Loss vs. R

= 125°C; L=400µH; V

= 600V, I

= 12.5A; V

= 15V

0.0

1.0

2.0

3.0

4.0

5.0

VF (V)

I F

(

)

25°C

125°C

100

150

RG ()

500

1000

1500

2000

r
g

(
µ

)

EON

EOFF

IC (A)

500

1000

1500

2000

2500

3000

r
g

(

)

EOFF

EON

GB25RF120K

www.irf.com

Fig. WF3- Typ. Turn-off Loss Waveform

@ T

= 125°C using Fig. CT.4

Fig. WF4- Typ. Turn-on Loss Waveform

@ T

= 125°C using Fig. CT.4

-100

100

200

300

400

500

600

700

800

900

9.80

10.00 10.20 10.40 10.60 10.80

Time (µs)

)

-5

)

TEST CURRENT

90% test current

5% V

10% test current

Eon Loss

-100

100

200

300

400

500

600

700

800

900

-0.60

-0.10

0.40

0.90

1.40

Time(µs)

)

-5

)

90% I

5% V

5% I

Eof f Loss

Brake

Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode)

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

r
m

l

R

(

Z

t
h

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

i (sec)

0.714 0.000489

1.193 0.020644

0.394 0.154110

/Ri

Ci=

i/Ri

Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT)

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

r
m

l

R

(

Z

t
h

)

0.20

0.10

D = 0.50

0.02
0.01

0.05

SINGLE PULSE
( THERMAL RESPONSE )

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

i (sec)

0.268 0.000469

0.642 0.018501

0.290 0.056904

/Ri

Ci=

i/Ri

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: GB25RF120K

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