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Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
1200
V
I
F
@ T
C
= 25C
Continuous Forward Current
I
F
@ T
C
= 100C
Continuous Forward Current
8.0
I
FSM
Single Pulse Forward Current
130
I
FRM
Maximum Repetitive Forward Current
32
I
AS
Maximum Single Pulse Avalanche Current
8.0
P
D
@ T
C
= 25C
Maximum Power Dissipation
73.5
P
D
@ T
C
= 100C
Maximum Power Dissipation
29
T
J
Operating Junction and
T
STG
Storage Temperature Range
PD -2.365A
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA08PB120 is a state of the art center tap ultra fast
recovery diode. Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08PB120
Absolute Maximum Ratings
-55 to +150
W
A
C
5/12/97
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 8.0A
Q
rr
(typ.)= 140nC
I
RRM
(typ.)
= 4.5A
t
rr
(typ.)
= 28ns
di
(rec)M
/dt (typ.)* = 85A/s
*
125C
TO-247AC
(Modified)
HFA08PB120
Parameter
Min.
Typ.
Max.
Units
T
lead
Lead Temperature
300
C
R
JC
Thermal Resistance, Junction to Case
1.7
R
JA
Thermal Resistance, Junction to Ambient
40
R
CS
Thermal Resistance, Case to Heat Sink
0.25
6.0
g
0.21
(oz)
6.0
12
Kg-cm
5.0
10
lbfin
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
28
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
63
95
ns
T
J
= 25C
t
rr2
106 160
T
J
= 125C
I
F
= 8.0A
I
RRM1
Peak Recovery Current
4.5
8.0
T
J
= 25C
I
RRM2
6.2
11
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
140 380
T
J
= 25C
Q
rr2
335 880
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
133
T
J
= 25C
di
(rec)M
/dt2
During t
b
85
T
J
= 125C
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
1200
V
I
R
= 100A
2.6
3.3
I
F
= 8.0A
3.4
4.3
V
I
F
= 16A
2.4
3.1
I
F
= 8.0A, T
J
= 125C
0.31 10
V
R
= V
R
Rated
135 1000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
11
20
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 10
See Fig. 6
See Fig. 7
See Fig. 8
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Wt
Weight
Mounting Torque
L=100H, duty cycle limited by max T
J
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
HFA08PB120
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Junction Capacitance -C
T
(pF)
HFA08PB120
Fig. 7 - Typical Stored Charge vs. di
f
/dt,
(per Leg)
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt,
(per Leg)
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
(per Leg)
di (rec) M/dt-
(A /s)
Qrr-
(nC)
Irr- (
A
)
trr-
(nC)
HFA08PB120
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
V
(AVAL)
R(RATED)
I
L(PK)
V
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
CURRENT
MONITOR
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
+
FREE-WHEEL
DIODE
Vd = 50V
L = 100H
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