hfa08sd60s-revA
1
V
RRM
Cathode-to-Anode Voltage
600
V
I
F(AV)
Continuous Forward Current
8
A
T
C
= 100C
I
FSM
Single Pulse Forward Current
60
I
FRM
Peak Repetitive Forward Current
24
P
D
Maximum Power Dissipation
14
W
T
C
= 100C
T
J
,
T
STG
Operating Junction and Storage Temperatures
- 55 to 150
C
Parameters
Max
Units
HFA08SD60S
Bulletin PD-20618 rev. B 07/02
t
rr
= 18ns
I
F(AV)
= 8Amp
V
R
= 600V
Features
Description/ Applications
Absolute Maximum Ratings
Ultrafast, Soft Recovery Diode
Ultrafast Recovery Time
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Guaranteed Avalanche
Specified at Operating Temperature
D - PAK
Package Outline
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for freewheeling,
flyback, power converters, motor drives, and other applications
where high speed and reduced switching losses are design
requirements.
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and
Switching Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
www.irf.com
HFA08SD60S
Bulletin PD-20618 rev. B 07/02
2
www.irf.com
t
rr
Reverse Recovery Time
-
18
-
ns
I
F
= 1.0A, di
F
/dt = 200A/A, V
R
= 30V
-
37
55
T
J
= 25C
-
55
90
T
J
= 125C
I
RRM
Peak Recovery Current
-
3.5
5.0
A
T
J
= 25C
-
4.5
8.0
T
J
= 125C
Q
rr
Reverse Recovery Charge
-
65
138
nC
T
J
= 25C
-
124
360
T
J
= 125C
di(rec)
M
/dt Rate of Fall of recovery Current
-
240
-
A/s T
J
= 25C
-
210
-
T
J
= 125C
V
BR
,
V
r
Breakdown Voltage,
600
-
-
V
I
R
= 100A
Blocking Voltage
V
F
Forward Voltage
-
1.4
1.7
V
I
F
= 8A
See Fig. 1
-
1.7
2.1
V
I
F
= 16A
-
1.4
1.7
V
I
F
= 8A, T
J
= 125C
I
R
Max. Reverse Leakage Current
-
0.3
5.0
A
V
R
= V
R
Rated
-
100
500
A
T
J
= 125C, V
R
= 0.8 x V
R
Rated
C
T
Junction Capacitance
-
10
25
pF
V
R
= 200V
L
S
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
I
F
= 8A
V
R
= 200V
di
F
/dt = 200A/s
Parameters
Min
Typ
Max
Units
T
J
Max. Junction Temperature Range
-
-
- 55 to 150
C
T
Stg
Max. Storage Temperature Range
-
-
- 55 to 150
T
lead
Lead Temperature
-
-
300
R
thJC
Thermal Resistance, Junction to Case
-
-
3.5
C/ W
R
thJA
Thermal Resistance, Junction to Ambient
-
-
80
Wt
Weight
-
2.0
-
g
-
0.07
-
(oz)
Thermal - Mechanical Characteristics
!
!
Typical Socket Mount
Parameters
Min Typ Max Units Test Conditions
Parameters
Min Typ Max Units Test Conditions
Bulletin PD-20618 rev. B 07/02
3
HFA08SD60S
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
1
10
100
1
10
100
1000
T = 25C
J
0.1
1
10
00
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
T = 150C
T = 125C
T = 25C
J
J
J
.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
600
125C
25C
T = 150C
J
HFA08SD60S
Bulletin PD-20618 rev. B 07/02
4
www.irf.com
Fig. 5 - Typical Reverse Recovery vs. di
F
/dt
Fig. 6 - Typical Recovery Current vs. di
F
/dt
Irr (A)
Qrr ( nC )
di
(rec)M
/ dt (A/ s)
di
F
/dt (A/ s)
trr (ns)
Average Forward Current - I
F(AV)
(A)
Fig. 8 - Typical di
(rec)M
/dt vs. di
F
/dt
Fig. 7 - Typical Stored Charge vs. di
F
/dt
di
F
/dt (A/s )
di
F
/dt (A/s )
10
20
30
40
50
60
70
80
100
1000
If = 16A
If = 8A
If = 4A
Vr = 200V
Tj = 125C
Tj = 25C
100
1000
10000
100
1000
If = 16A
If = 8A
If = 4A
Vr = 200V
Tj = 125C
Tj = 25C
0
100
200
300
400
500
100
1000
If = 16A
If = 8A
If = 4A
Vr = 200V
Tj = 125C
Tj = 25C
0
5
10
15
20
100
1000
If = 16A
If = 8A
If = 4A
Vr = 200V
Tj = 125C
Tj = 25C
Bulletin PD-20618 rev. B 07/02
5
HFA08SD60S
www.irf.com
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di
F
/dt
di
F
/dt
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q rr =
t rr x I RRM
2
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