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Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case, Single Leg Conducting
0.70
Junction-to-Case, Both Legs Conducting
0.35
R
CS
Case-to-Sink, Flat , Greased Surface
0.10
Wt
Weight
79 (2.8)
g (oz)
Mounting Torque
35 (4.0)
50 (5.7)
Terminal Torque
50 (5.7)
75 (8.5)
Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 25C
Continuous Forward Current
83
I
F
@ T
C
= 100C
Continuous Forward Current
40
I
FSM
Single Pulse Forward Current
400
I
AS
Maximum Single Pulse Avalanche Current
2.0
E
AS
Non-Repetitive Avalanche Energy
220
J
P
D
@ T
C
= 25C
Maximum Power Dissipation
180
P
D
@ T
C
= 100C
Maximum Power Dissipation
71
T
J
Operating Junction and
T
STG
Storage Temperature Range
PD-2.442
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA100MD60C
Revision 0
V
R
= 600V
V
F
= 1.4V
Q
rr
* = 780nC
di
(rec)M
/dt * = 240A/s
*
125C
Note: Limited by junction temperature
L = 100H, duty cycle limited by max T
J
Absolute Maximum Ratings (per Leg)
C/W
K/W
-55 to +150
W
A
C
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
BASE (ISOLATED)
LUG
TERMINAL
CATHODE
TO-244AB
(ISOLATED)
See Fig. 12
Thermal - Mechanical Characteristics
lbfin
(Nm)
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Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
V
FM
Max Forward Voltage
1.2
1.4
I
F
= 50A
1.4
1.6
V
I
F
= 100A
1.1
1.3
I
F
= 50A, T
J
= 125C
I
RM
Max Reverse Leakage Current
4.0
20
A
V
R
= V
R
Rated
1.0
4.0
mA
T
J
= 125C, V
R
= 480V
C
T
Junction Capacitance
140
250
pF
V
R
= 200V
From top of terminal hole to mounting
plane
Electrical Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
HFA100MD60C
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
7.0
nH
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
33
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
76
115
ns
T
J
= 25C
t
rr2
130
200
T
J
= 125C
I
F
= 50A
I
RRM1
Peak Recovery Current
8.0
15
T
J
= 25C
I
RRM2
12
22
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
300
900
T
J
= 25C
Q
rr2
780 2200
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
340
T
J
= 25C
di
(rec)M
/dt2
During t
b
240
T
J
= 125C
14.99 (0.590)
92.71 (3.650)
90.17 (3.550)
3.02 (0.119)
3.35 (0.132)
(2 PLCS.)
20.42 (0.804)
23.55 (0.927)
6.99 (0.275)
7.49 (0.295)
DIA.
34.925 (1.375)
60.96 (2.400)
63.50 (2.500)
REF.
80.01 (3.150)
40.26 (1.585)
39.75 (1.565)
15.75 (0.620)
1/4-20 SLOTTED HEX
17.78 (0.700)
20.32 (0.800)
1
2
3
OUTLINE TO-244AB (ISOLATED)
Dimensions in Millimeters and (Inches)
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
3 - ANODE
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Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics, (per Leg)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
HFA100MD60C
1
10
100
1000
0.0
1.0
2.0
3.0
FM
F
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
I
(
A
)
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
0.1
1
10
100
1000
10000
0
200
400
600
R
R
Reverse Voltage - V (V)
T = 150C
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
(
A
)
T = 125C
T = 25C
J
J
J
10
100
1000
10000
1
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
T
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
-
C
(
p
F
)
A
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1
t
h
J
C
t , Rectangular Pulse Duration (Seconds)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
(Thermal Resistance)
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
-
Z
(
K
/
W
)
2
t
1
t
P
D M
N otes:
1. D uty factor D = t / t
2. Peak T = P x Z + T
J
D M
thJC
C
2
1
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HFA100MD60C
Fig. 7 - Typical Stored Charge vs. di
f
/dt,
(per Leg)
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt,
(per Leg)
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
(per Leg)
40
80
120
160
200
100
1000
f
di /dt - (A/s)
I = 30A
F
t
-
(
n
s
)
r
r
I = 50A
I = 100A
F
F
V = 200V
T = 125C
T = 25C
R
J
J
100
1000
10000
100
1000
f
di /dt - (A/s)
d
i
(
r
e
c
)
M
/
d
t
-
(
A
/
s
)
I = 30A
F
I = 70A
I = 140A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
0
1000
2000
3000
100
1000
f
di /dt - (A/s)
R
R
Q
-
(
n
C
)
I = 30A
F
I = 50A
I = 100A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
1
10
100
100
1000
f
di /dt - (A/s)
I = 30A
F
I
-
(
A
)
I
R
R
M
I = 50A
I = 100A
F
F
V = 200V
T = 125C
T = 25C
R
J
J
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4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
V
(AVAL)
R(RATED)
I
L(PK)
V
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
HFA100MD60C
CURRENT
MONITOR
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
+
FREE-WHEEL
DIODE
Vd = 50V
L = 100H
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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