Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 25C
Continuous Forward Current
171
I
F
@ T
C
= 100C
Continuous Forward Current
85
I
FSM
Single Pulse Forward Current
600
I
AS
Maximum Single Pulse Avalanche Current
2.0
E
AS
Non-Repetitive Avalanche Energy
220
J
P
D
@ T
C
= 25C
Maximum Power Dissipation
463
P
D
@ T
C
= 100C
Maximum Power Dissipation
185
T
J
Operating Junction and
T
STG
Storage Temperature Range
PD-2.444
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA105NH60
Revision 0
Absolute Maximum Ratings
V
R
= 600V
V
F
= 1.5V
Q
rr
* = 1200nC
di
(rec)M
/dt * = 240A/s
*
125C
A
LUG
TERMINAL
ANODE
BASE CATHODE
d
a
HALF-PAK
Note: Limited by junction temperature
L = 100H, duty cycle limited by max T
J
Parameter
Min.
Typ.
Max.
Units
R
JC
Junction-to-Case, Single
0.27
R
CS
Case-to-Sink, Flat , Greased Surface
0.15
Wt
Weight
26 (0.9)
g (oz)
Mounting Torque
15 (1.7)
25 (2.8)
lbfin
Terminal Torque
20 (2.2)
40 (4.4)
(Nm)
C/W
K/W
Thermal - Mechanical Characteristics
-55 to +150
W
C
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Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
V
FM
Max Forward Voltage
1.3
1.5
I
F
= 105A
1.5
1.7
V
I
F
= 210A
1.2
1.4
I
F
= 105A, T
J
= 125C
I
RM
Max Reverse Leakage Current
6.0
30
A
V
R
= V
R
Rated
1.5
6.0
mA
T
J
= 125C, V
R
= 480V
C
T
Junction Capacitance
200
300
pF
V
R
= 200V
From top of terminal hole to mounting
plane
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
HFA105NH60
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
6.0
nH
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
35
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
90
140
ns
T
J
= 25C
t
rr2
160
240
T
J
= 125C
I
F
= 105A
I
RRM1
Peak Recovery Current
10
18
T
J
= 25C
I
RRM2
15
30
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
450 1300
T
J
= 25C
Q
rr2
1200 3600
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
310
T
J
= 25C
di
(rec)M
/dt2
During t
b
240
T
J
= 125C
30.40 (1.197)
29.90 (1.177)
18.42 (0.725)
19.69 (0.775)
12.83 (0.505)
12.57 (0.495)
DIA.
4.11 (0.162)
3.86 (0.152)
19.18 (0.755)
18.92 (0.745)
SQ.
13.59 (0.535)
14.10 (0.555)
15.75 (0.620)
14.99 (0.590)
3.05 (0.120)
3.30 (0.130)
38.61 (1.520)
39.62 (1.560)
DIA.
3.86 (0.152)
4.11 (0.162)
1/4-20 UNC-2B
Dimensions in millimeters and inches
1
2
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
H P
ALF- AK
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Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
HFA105NH60
0.1
1
10
100
1000
10000
0
200
400
600
R
R
Reverse Voltage - V (V)
T = 150C
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
(
A
)
T = 125C
T = 25C
J
J
J
100
1000
10000
1
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
T
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
-
C
(
p
F
)
A
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1
t
h
J
C
t , Rectangular Pulse Duration (Seconds)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
(Thermal Resistance)
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
-
Z
(
K
/
W
)
2
t
1
t
P
D M
N otes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J
D M
thJC
C
2
1
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
FM
F
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
I
(
A
)
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
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HFA105NH60
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
40
80
120
160
200
240
100
1000
f
di /dt - (A/s)
t
-
(
n
s
)
r
r
I = 40A
I = 105A
I = 200A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
1
10
100
100
1000
f
di /dt - (A/s)
I
-
(
A
)
I
R
R
M
I = 40A
I = 105A
I = 200A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
100
1000
10000
100
1000
f
di /dt - (A/s)
d
i
(
r
e
c
)
M
/
d
t
-
(
A
/
s
)
I = 40A
I = 105A
I = 200A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
1000
2000
3000
4000
100
1000
f
di /dt - (A/s)
R
R
Q
-
(
n
C
)
I = 40A
I = 105A
I = 200A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
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4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
V
(AVAL)
R(RATED)
I
L(PK)
V
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
HFA105NH60
CURRENT
MONITOR
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
+
FREE-WHEEL
DIODE
Vd = 50V
L = 100H
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
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IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST
ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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