FA40HF60.P65
Parameter
Max.
Units
V
R
D.C. Reverse Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
22
I
FSM
@ T
C
= 25C
Single Pulse Forward Current
225
P
D
@ T
C
= 25C
Maximum Power Dissipation
83
W
T
J
Operating Junction and
-55 to +150
C
T
STG
Storage Temperature Range
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
V
R
= 600V
V
F
= 1.75V
Q
rr
= 290nC
di
(rec)M
/dt = 400A/s
A
Absolute Maximum Ratings (per Leg)
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Thermal - Mechanical Characteristics
Parameter
Typ.
Max. Units
R
JC
Junction-to-Case, Single Leg Conducting
--
1.5
Weight
2.4
--
g
C/W
HFA40HF60
ANODE
CATHODE
(ISOLATED BASE)
6/30/99
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1
SMD-1
PD-20381
HFA40HF60
2
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Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
--
--
V
I
R
= 100A
V
FM
Max Forward Voltage
--
1.63 1.75
I
F
= 22A
--
2.07 2.25
V
I
F
= 45A
See Fig. 1
--
1.52 1.64
I
F
= 22A, T
J
= 125C
I
RM
Max Reverse Leakage Current
--
--
10
A
V
R
= V
R
Rated
--
--
1.0
mA
T
J
= 125C, V
R
= 480V
C
T
Junction Capacitance
--
56
59
pF
V
R
= 200V
See Fig. 3
L
S
Series Inductance
--
2.8
--
nH
Measured from center of bond pad to
end of anode bonding wire
Electrical Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
See Fig. 2
Parameter
Min. Typ. Max. Units Test Conditions
t
rr1
Reverse Recovery Time
--
60
90
ns
T
J
= 25C See Fig.
t
rr2
--
110
165
T
J
= 125C 5
I
F
= 22A
I
RRM1
Peak Recovery Current
--
5.2
7.8
T
J
= 25C See Fig.
I
RRM2
--
8.5
13
T
J
= 125C 6
V
R
= 200V
Q
rr1
Reverse Recovery Charge
--
190
290
T
J
= 25C See Fig.
Q
rr2
--
560
840
T
J
= 125C 7
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
--
270
400
T
J
= 25C See Fig.
di
(rec)M
/dt2
During t
b
--
170
250
T
J
= 125C 8
IR Case Style SMD-1
Legend:
1 - Cathode
2 - N/C
3 - Anode
HFA40HF60
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3
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0.1
1
1 0
1 0 0
1 0 0 0
0
2 0 0
4 0 0
6 0 0
R
R
R e ve rse V o lta g e - V (V )
T = 1 50C
R
e
v
e
r
s
e
C
u
r
r
e
n
t
-
I
(
A
)
T = 1 25C
J
J
T = 25C
T = -55C
J
J
1 0
1 0 0
1 0 0 0
1
1 0
1 0 0
1 0 0 0
T = 25C
J
R e v e rs e V o lta g e - V (V )
R
T
J
u
nc
t
i
on
Cap
a
c
i
t
anc
e
-
C
(
p
F
)
A
1
1 0
1 0 0
0.0
1.0
2.0
3.0
4.0
FM
F
I
n
s
t
ant
ane
ous
F
o
r
w
ar
d
C
u
r
r
ent
-
I
(
A
)
F orward V olta ge D ro p - V (V )
T = 1 50 C
T = 1 25 C
T = 25 C
J
J
J
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
HFA40HF60
4
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Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
0
3 0
6 0
9 0
1 2 0
1 5 0
1 0 0
1 0 0 0
f
d i /d t - (A / s )
I = 44A
F
I = 22A
F
I = 11A
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
1
1 0
1 0 0
1 0 0
1 0 0 0
f
d i /d t - (A / s )
I = 44 A
F
I = 2 2A
F
I = 11 A
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
2 0 0 0
1 0 0
1 0 0 0
f
di /dt - (A /s)
I = 44 A
I = 2 2A
I = 1 1A
F
F
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
Irr-
(
A)
trr-
(nC)
Qrr-
(nC)
di (rec) M/dt-
(A /s)
1 0 0
1 0 0 0
1 0 0 0 0
1 0 0
1 0 0 0
f
d i /d t - (A / s )
I = 1 1A
F
I = 2 2A
F
I = 4 4A
F
V = 2 0 0 V
T = 1 2 5 C
T = 2 5 C
R
J
J
HFA40HF60
www.irf.com
5
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
R R M
I
R R M
0 .5
d i(re c)M /d t
0 .7 5 I
R R M
5
4
3
2
0
1
d i /d t
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
R E V E R S E R E C O V E R Y C IR C U IT
IR F P 2 5 0
D .U . T .
L = 7 0 H
V = 2 0 0 V
R
0.0 1
G
D
S
d if/d t
A D J U S T
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 6/99
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