Parameter
Max.
Units
V
R
D.C. Reverse Voltage
200
V
I
F
@ T
C
= 100C
Continuous Forward Current
50
I
FSM
@ T
C
= 25C
Single Pulse Forward Current
600
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
W
T
J
Operating Junction and
-55 to +150
C
T
STG
Storage Temperature Range
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
Features
Description
HEXFRED
T M
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
V
R
= 200V
V
F
= 0.96V
Q
rr
* = 640nC
di
(rec)M
/dt * = 980A/s
*
125C
A
Absolute Maximum Ratings (per Leg)
Note:
D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Thermal - Mechanical Characteristics
Parameter
Typ.
Max. Units
R
JC
Junction-to-Case, Single Leg Conducting
--
1.0
Wt
Weight
2.6
--
g
C/W
HFA50HF20
PRELIMINARY
PD 2.506
ANODE
ANODE
CATHODE
4/7/97
SMD -1
HFA50HF20
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
200
--
--
V
I
R
= 100A
V
FM
Max Forward Voltage
0.88 0.96
I
F
= 50A
--
0.98 1.11
V
I
F
= 100A
See Fig. 1
0.75 0.84
I
F
= 50A, T
J
= 125C
I
RM
Max Reverse Leakage Current
--
--
10
A
V
R
= V
R
Rated
--
--
1.0
mA
T
J
= 125C, V
R
= 160V
C
T
Junction Capacitance
--
170
310
pF
V
R
= 200V
See Fig. 3
L
S
Series Inductance
--
2.8
--
nH
Measured from center of bond pad to
end of anode bonding wire
Electrical Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics (per Leg) @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
See Fig. 2
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
--
35
--
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
--
62
93
ns
T
J
= 25C See Fig.
t
rr2
--
98
150
T
J
= 125C 5
I
F
= 50A
I
RRM1
Peak Recovery Current
--
10
18
T
J
= 25C See Fig.
I
RRM2
--
14
26
T
J
= 125C 6
V
R
= 200V
Q
rr1
Reverse Recovery Charge
--
260
390
T
J
= 25C See Fig.
Q
rr2
--
640
960
T
J
= 125C 7
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
--
600
900
T
J
= 25C See Fig.
di
(rec)M
/dt2
During t
b
--
980 1500
T
J
= 125C 8
IR Case Style SMD-1
Dimensions in millimeters and (inches)
Lead Assignments :
1 - Cathode
2, 3 - Anode
HFA50HF20
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Reverse Current - I
R
(A)
Junction Capacitance - C
T
(pF)
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
1
thJC
t , Rectangular Pulse Duration (Seconds)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
(Thermal Resistance)
Thermal Impedance - Z (K/W)
2
t
1
t
P
DM
N o t es :
1 . D u ty fa c t o r D = t / t
2 . P e a k T = P x Z + T
J
D M
th J C
C
2
1
thJC
( K/W )
Reverse Voltage - V
R
( V )
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
160
200
T = 150C
A
J
J
T = 25C
T = 75C
T = 50C
T = 125C
T = 100C
J
J
J
J
100
1000
10000
1
10
100
1000
T = 25C
J
A
A
Reverse Voltage - V
R
( V )
HFA50HF20
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt,
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
0
1000
2000
3000
100
1000
f
di /dt - (A/s)
I = 100A
I = 50A
I = 25A
Q - (nC)
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
rr
50
60
70
80
90
100
110
100
1000
f
di /dt - (A/s)
A
t - (ns)
rr
I = 100A
I = 50A
I = 25A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
1
10
100
100
1000
f
di /dt - (A/s)
A
I - (A)
IRRM
I = 100A
I = 50A
I = 25A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
100
1000
10000
100
1000
f
di /dt - (A/s)
di(rec)M/dt - (A/s)
A
I = 25A
I = 50A
I = 100A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
HFA50HF20
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
R R M
I
R R M
0 .5
di(r ec) M/dt
0.75 I
R R M
5
4
3
2
0
1
d i /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
R E VER SE R EC O VER Y C IR C U IT
IR F P 2 5 0
D . U . T .
L = 7 0 H
V = 20 0 V
R
0 .0 1
G
D
S
d if /d t
A D J U S T
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97
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