Parameter
Max
Units
V
R
Cathode-to-Anode Voltage
1200
V
I
F
@ T
C
= 100C
Continuous Forward Current
8.0
A
I
FSM
Single Pulse Forward Current
130
I
FRM
Maximum Repetitive Forward Current
32
P
D
@ T
C
= 25C
Maximum Power Dissipation
73.5
W
P
D
@ T
C
= 100C
Maximum Power Dissipation
29
T
J
Operating Junction and
- 55 to 150
C
T
STG
Storage Temperature Range
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08TB120
1
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F (AV)
= 8.0A
Q
rr
(typ.)= 140nC
I
RRM
(typ.)
= 4.5A
t
rr
(typ.)
= 28ns
di
(rec) M
/dt (typ.)* = 85A /s
Bulletin PD -2.383 rev. C 11/00
Absolute Maximum Ratings
* 125C
TO-220AC
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
HFA08TB120
Bulletin PD-2.383 rev. C 11/00
2
Parameter
Min
Typ
Max
Units
T
lead
Lead Temperature
-
-
300
C
R
thJC
Thermal Resistance, Junction to Case
-
-
1.7
k/W
R
thJA
Thermal Resistance, Junction to Ambient
-
-
40
R
thCS
Thermal Resistance, Case to Heat Sink
-
0.25
-
Wt
Weight
-
6.0
-
g
-
0.21
-
(oz)
Mounting Torque
6.0
-
12
Kg-cm
5.0
-
10
lbfin
t
rr
Reverse Recovery Time
-
28
-
ns
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
-
63
95
T
J
= 25C
I
F
= 8.0A
t
rr2
-
106
160
T
J
= 125C
V
R
= 200V
I
RRM1
Peak Recovery Current
-
4.5
8.0
A
T
J
= 25C
di
f
/dt = 200A/s
I
RRM2
-
6.2
11
T
J
= 125C
Q
rr1
Reverse Recovery Charge
-
140
380
nC
T
J
= 25C
Q
rr2
-
335
880
T
J
= 125C
di
(rec)M
/dt1 Peak Rate of Recovery
-
133
-
A/s
T
J
= 25C
di
(rec)M
/dt2 Current During t
b
-
85
-
T
J
= 125C
V
BR
Cathode Anode Breakdown
1200
-
-
V
I
R
= 100A
Voltage
V
FM
Max. Forward Voltage
-
2.6
3.3
V
I
F
= 8.0A
-
3.4
4.3
I
F
= 16A
-
2.4
3.1
I
F
= 8.0A, T
J
= 125C
I
RM
Max. Reverse Leakage
-
0.31
10
A
V
R
= V
R
Rated
Current
-
135 1000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
R
C
T
Junction Capacitance
-
11
20
pF
V
R
= 200V
Rated
L
S
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from pkg body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Thermal - Mechanical Characteristics
!
0.063 in. from Case (1.6mm) for 10 sec
"#
Typical Socket Mount
$
Mounting Surface, Flat, Smooth and Greased
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
"
$
!
Parameter
Min Typ Max Units Test Conditions
Parameter
Min Typ Max Units Test Conditions
3
Bulletin PD-2.383 rev. C 11/00
HFA08TB120
Fig. 1 - Max. Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Fig. 2 - Typ. Values Of Reverse Current
Vs. Reverse Voltage
Reverse Voltage - V
R
(V)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
t
1
, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(C/W)
1
10
100
0
2
4
6
8
10
T = 150C
T = 125C
T = 25C
J
J
J
1
10
100
1
10
100
1000
10000
T = 25C
J
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
2
t
1
t
P
DM
0.01
0.1
1
10
100
1000
0
300
600
900
1200
125C
100C
25C
T = 150C
J
HFA08TB120
Bulletin PD-2.383 rev. C 11/00
4
Fig. 5 - Typical Reverse Recovery
Vs. di
f
/dt
Fig. 8 - Typical Stored Charge vs. di
f
/dt
Fig. 6 - Typical Recovery Current
Vs. di
f
/dt
Fig. 7 - Typical di
(REC)
M/dt vs. di
f
/dt
Qrr ( nC )
trr ( ns )
Irr ( A)
di
(REC)
M/dt (A/s )
di
F
/dt (A/s )
di
F
/dt (A/s )
0
4
8
12
16
20
100
1000
V = 160V
T = 125C
T = 25C
R
J
J
IF = 8 A
IF = 4 A
di
F
/dt (A/s )
0
200
400
600
800
1000
1200
100
1000
V = 160V
T = 125C
T = 25C
R
J
J
IF = 8 A
IF = 4 A
di
F
/dt (A/s )
10
100
1000
100
1000
V = 160V
T = 125C
T = 25C
R
J
J
IF = 8 A
IF = 4 A
20
40
60
80
100
120
140
160
100
1000
V = 160V
T = 125C
T = 25C
R
J
J
IF = 8 A
IF = 4 A
5
Bulletin PD-2.383 rev. C 11/00
HFA08TB120
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9- Reverse Recovery Parameter Test Circuit
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Reverse Recovery Circuit
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
Q rr =
t rr x I RRM
2
di
F
/dt
di
F
/dt
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