5/08/01
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
Features
Description
HEXFRED
TM
diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
V
R
= 200V
I
F(AV)
= 20A
t
rr
= 20ns
Note:
Q
D.C. = 50% rect. wave
R
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB20HJ20C
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1
Parameter
Max.
Units
V
R
Cathode to Anode Voltage ( Per Leg )
200
V
I
F(AV)
Continuous Forward Current,
Q
T
C
= 85C
20
I
FSM
Single Pulse Forward Current,
R
T
C
= 25C ( Per Leg)
125
P
D
@ T
C
= 25C
Maximum Power Dissipation
28
W
T
J,
T
STG
Operating Junction and Storage Temperature Range
-55 to +150
C
A
Absolute Maximum Ratings
CASE STYLE
SMD-0.5
(ISOLATED BASE)
ANODE COMMON ANODE
CATHODE
PD - 94169A
2
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HFB20HJ20C
A/s
nC
A
Dynamic Recovery Characteristics ( Per Leg )@ T
J
= 25C (unless otherwise specified)
A/s
nC
A
Parameter Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
--
--
20
ns
I
F
= 1.0A,V
R
= 30V, di
f
/dt = 200A/s
t
rr1
Reverse Recovery Time
--
27
--
ns
T
J
= 25C See Fig.
t
rr2
--
42
--
T
J
= 125C 5
I
F
= 20A
I
RRM1
Peak Recovery Current
--
3.5
--
T
J
= 25C See Fig.
I
RRM2
--
5.5
--
T
J
= 125C 6
V
R
= 160V
Q
rr1
Reverse Recovery Charge
--
54
--
T
J
= 25C See Fig.
Q
rr2
--
120 --
T
J
= 125C 7
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
--
640
--
T
J
= 25C See Fig.
di
(rec)M
/dt2
During t
b
--
850
--
T
J
= 125C 8
Thermal - Mechanical Characteristics
Parameter
Typ.
Max.
Units
R
thJC
Junction-to-Case, Single Leg Conducting
--
4.5
Wt
Weight
1.0
--
g
C/W
See Fig. 2
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage 200
--
-- V I
R
= 100A
Electrical Characteristics ( Per Leg ) @ T
J
= 25C (unless otherwise specified)
L
S
Series Inductance
--
4.8
--
nH
Measured from center of cathode pad
to center of anode pad
C
T
Junction Capacitance, See Fig. 3
--
--
20
pF
V
R
= 200V
I
R
Reverse Leakage Current
--
--
10
A
V
R
= V
R
Rated
See Fig. 2
--
--
1.0
mA
V
R
= V
R
Rated, T
J
= 125C
V
F
Forward Voltage
--
-- 1.26
I
F
= 10A, T
J
= -55C
See Fig. 1
--
-- 1.11
I
F
= 10A, T
J
= 25C
-- -- 1.30
I
F
= 20A, T
J
= 25C
-- -- 0.96
I
F
= 10A, T
J
= 125C
V
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3
HFB20HJ20C
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics ( Per Leg )
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage ( Per Leg )
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage ( Per Leg )
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current ( Per Leg )
0
50
100
150
200
Reverse Voltage - VR (V)
10
100
Junction Capacitance - C
T
(pF)
TJ = 25C
0
50
100
150
200
Reverse Voltage - V R (V)
1E-005
0.0001
0.001
0.01
0.1
1
10
100
Reverse Current - I
R
(A)
125C
75C
25C
100C
0.0
0.4
0.8
1.2
1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
4
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HFB20HJ20C
Fig. 7 - Typical Stored Charge Vs. di
f
/dt ( Per Leg)
Fig. 8 - Typical di
(rec)M
/dt Vs. di
f
/dt ( Per Leg )
Fig. 5 - Typical Reverse Recovery Vs. di
f
/dt,( Per Leg)
Fig. 6 -Typical Recovery Current Vs. di
f
/dt ( Per Leg)
100
1000
dif / dt - ( A / s )
10
20
30
40
50
t rr
- ( ns )
VR = 160V
TJ = 125C
TJ = 25C
IF = 10A
IF = 40A
IF = 20A
100
1000
dif / dt - ( A / s )
1
10
100
I RRM
- ( A )
VR = 160V
TJ = 125C
TJ = 25C
IF = 10A
IF = 40A
IF = 20A
100
1000
dif / dt - ( A / s )
10
100
1000
Q
rr
- ( nC )
VR = 160V
TJ = 125C
TJ = 25C
IF = 10A
IF = 40A
IF = 20A
100
1000
dif / dt - ( A / s )
100
1000
10000
di
( rec )M
/ dt - ( A / s )
VR = 160V
TJ = 125C
TJ = 25C
IF = 10A
IF = 40A
IF = 20A
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5
HFB20HJ20C
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
R R M
I
R R M
0 .5
d i(re c)M /d t
0.75 I
R R M
5
4
3
2
0
1
d i /d t
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
R E V E R S E R E C O V E R Y C IR C U IT
IR F P 2 50
D .U .T .
L = 7 0 H
V = 2 00 V
R
0.01
G
D
S
d if/d t
A D JU S T
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
Case Outline and Dimensions -- SMD-0.5
HEXFRED DOUBLE DIE
2 = ANODE 1
1 = COMMON CATHODE
3 = ANODE 2
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