07/10/01
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Surface Mount
Features
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
FRED
V
R
= 200V
I
F(AV)
= 60A
t
rr
= 35ns
Note:
Q
D.C. = 50% rect. wave
R
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB60HF20
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1
Parameter
Max.
Units
V
R
Cathode to Anode Voltage
200
V
I
F(AV)
Continuous Forward Current,
Q
T
C
= 55C
60
I
FSM
Single Pulse Forward Current,
R
T
C
= 25C
500
P
D
@ T
C
= 25C
Maximum Power Dissipation
70
W
T
J,
T
STG
Operating Junction and Storage Temperature Range
-55 to +150
C
A
Absolute Maximum Ratings
ANODE
ANODE
CATHODE
CASE STYLE
SMD-1
PD - 94067C
2
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HFB60HF20
See Fig. 2
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage 200
--
--
V
I
R
= 100A
V
F
Forward Voltage
--
--
1.15
I
F
= 30A, T
J
=-55C
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
S
Series Inductance
--
5.9
--
nH
Measured from center of cathode
pad to center of anode pad
C
T
Junction Capacitance, See Fig. 3
--
--
190
pF
V
R
= 200V
I
R
Reverse Leakage Current
--
--
50
A
V
R
= V
R
Rated
See Fig. 2
--
--
1.0
mA
V
R
= V
R
Rated, T
J
= 125C
A/s
nC
A
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
Parameter Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
--
--
35
ns
I
F
= 1.0A,V
R
= 30V, di
f
/dt = 300A/s
t
rr1
Reverse Recovery Time
--
45
--
ns
T
J
= 25C See Fig.
t
rr2
--
71
--
T
J
= 125C 5
I
F
= 60A
I
RRM1
Peak Recovery Current
--
5.3
--
T
J
= 25C See Fig.
I
RRM2
--
10.3
--
T
J
= 125C 6
V
R
= 160V
Q
rr1
Reverse Recovery Charge
--
120
--
T
J
= 25C See Fig.
Q
rr2
--
366 --
T
J
= 125C 7
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
--
590
--
T
J
= 25C See Fig.
di
(rec)M
/dt2
During t
b
--
1290 --
T
J
= 125C 8
Thermal - Mechanical Characteristics
Parameter
Typ.
Max.
Units
R
thJC
Junction-to-Case
--
1.76
Wt
Weight
2.6
--
g
C/W
See Fig. 1
--
-- 0.97
I
F
= 30A, T
J
= 25C
--
-- 1.08
I
F
= 60A, T
J
= 25C
-- -- 1.30
I
F
=120A, T
J
= 25C
-- -- 0.8
I
F
= 30A, T
J
=125C
V
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3
HFB60HF20
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
0
40
80
120
160
200
Reverse Voltage - VR (V)
0.001
0.01
0.1
1
10
100
Reverse Current - I
R
( uA )
125C
75C
25C
100C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
1
10
100
1000
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
40
80
120
160
200
Reverse Voltage - VR (V)
100
1000
10000
Junction Capacitance - C
T
(pF)
TJ = 25C
4
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HFB60HF20
Fig. 7 - Typical Stored Charge Vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt Vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery Vs. di
f
/dt,
Fig. 6 - Typical Recovery Current Vs. di
f
/dt,
100
1000
dif / dt - ( A / s )
1
10
100
I RRM
- ( A )
VR = 160V
TJ = 125C
TJ = 25C
IF = 30A
IF = 120A
IF = 60A
100
1000
dif / dt - ( A / s )
20
40
60
80
100
t rr
- ( ns )
VR = 160V
TJ = 125C
TJ = 25C
IF = 30A
IF = 120A
IF = 60A
100
1000
dif / dt - ( A / s )
10
100
1000
10000
Q
rr
- ( nC )
VR = 160V
TJ = 125C
TJ = 25C
IF = 30A
IF = 120A
IF = 60A
100
1000
dif / dt - ( A / s )
100
1000
10000
di
( rec )M
/ dt - ( A / s )
VR = 160V
TJ = 125C
TJ = 25C
IF = 30A
IF = 120A
IF = 60A
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5
HFB60HF20
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
R R M
I
R R M
0 .5
d i(re c)M /d t
0.75 I
R R M
5
4
3
2
0
1
d i /d t
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
R E V E R S E R E C O V E R Y C IR C U IT
IR F P 2 50
D .U .T .
L = 7 0 H
V = 2 00 V
R
0.01
G
D
S
d if/d t
A D JU S T
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
Case Outline and Dimensions -- SMD-1
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