0151-S.p65
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS0151
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD60144-K
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Packages
Product Summary
R
ds(on)
25m
(max)
V
clamp
50V
I
shutdown
35A
T
on
/T
off
1.5
s
Typical Connection
3-Lead D
2
Pak
IPS0151S
3-Lead TO-220
PS0151
S
L o a d
R in s e r ie s
( if n e e d e d )
L o g ic s ig n a l
IN
D
c o n t r o l
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1
(Refer to lead assignment for correct pin configuration)
IPS0151(S)
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
--
55
--
Rth 2
Thermal resistance junction to case
--
2
a
Rth 1
Thermal resistance with standard footprint
--
60
--
Rth 2
Thermal resistance with 1" square footprint
--
35
--
Rth 3
Thermal resistance junction to case
--
2
--
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS0151
--
4.3
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS0151S
--
3.8
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
A
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
m copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum Input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
rth=62
o
C/W IPS0151
--
2.8
TO220 free air
rth=5
o
C/W IPS015135
--
35
rth=80
o
C/W IPS0151S
--
2.2
SMD220 Std footprint
Isd
pulsed
Diode max. pulsed current
(1)
--
45
Pd
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS0151
--
2
(rth=80
o
C/W) IPS0151S
--
1.56
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
--
300
V
W
A
TO220 with Rth=5
o
C/W
kV
o
C
IPS0151(S)
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
20
35
50
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10 40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
10
20
25
Tj = 150
o
C
--
35
45
Idss1
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to source clamp voltage 1
47
52
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
50
55
60
Vin
clamp
IN to source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vin
th
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 3
, Rinput = 50
,
100
us pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.25
0.6
Tr
Rise time
0.2
0.9
1.5
Trf
Time to (final Rds(on) 1.3%)
--
3.8
--
Toff
Turn-off delay time
0.8
1.5
2
Tf
Fall time
0.4
1.1
2
Qin
Total gate charge
--
30
--
nC
Vin = 5V
See figure 2
See figure 2
s
A
IPS0151(S)
4
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Lead Assignments
Part Number
1 2 3
In D S
TO-220
IPS0151
2 (D)
D
2
PAK (SMD220)
IPS0151S
1 3
In D S
2 (D)
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
200
S
Q
R
Q
T > 165c
I > Isd
IPS0151(S)
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5
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Figure 3 - Active clamp waveforms
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
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