Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS021L
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD60145-K
Description
The IPS021L is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-
temperature, ESD protection and drain to source
active clamp.This device combines a HEXFET
POWER MOSFET and a gate driver. It offers full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 5A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Package
Product Summary
R
ds(on)
150m
(max)
V
clamp
50V
I
shutdown
5A
T
on
/T
off
1.5
s
Typical Connection
3 Lead SOT223
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1
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS021L
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C)
--
1.4
A
Rin
Recommended resistor in series with IN pin
0.5
5
k
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard footprint with 70
m
copper thickness..
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum Input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
(rth=125
o
C/W)
--
1.4
Isd
pulsed
Diode max. pulsed current
(1)
--
10
Pd
Maximum power dissipation
(1)
(rth=125
o
C/W)
--
1
W
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
A
kV
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
1
Thermal resistance with standard footprint
--
100
--
Rth
2
Thermal resistance with 1" square footprint
--
50
--
Thermal Characteristics
o
C/W
o
C
V
IPS021L
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
4
5.5
7
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10
40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 10
, Rinput = 50
,
100
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.15
0.5
1
Tr
Rise time
0.4
0.9
2
Trf
Time to 130% final Rds(on)
2
6
12
Toff
Turn-off delay time
0.8
2
3.5
Tf
Fall time
0.5
1.3
2.5
Qin
Total gate charge
--
30
--
nC
Vin = 5V
See figure 2
See figure 2
s
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
100
130
150
Tj = 150
o
C
--
220
280
Idss 1
Drain to source leakage current
0
0.01
25
Vcc = 14V, Tj = 25
o
C
Idss 2
Drain to source leakage current
0
0.1
50
Vcc = 40V, Tj = 25
o
C
V
clamp 1
Drain to source clamp voltage 1
48
54
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
50
56
60
Vin
clamp
IN to source clamp voltage
7
8
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.5
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
Standard footprint 70
m copper thickness.
T
j
= 25
o
C, (unless otherwise specified).
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
A
V
A
IPS021L
4
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Lead Assignments
(2) D
1 2 3
In D S
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
1000
S
Q
R
Q
T > 165c
I > Isd
IPS021L
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5
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
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