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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS031
(
S
)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60150-J
Description
The IPS031/IPS031S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165
o
C
or when the drain current reaches 12A. The device
restarts once the input is cycled. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
Product Summary
R
ds(on)
60m
(max)
V
clamp
50V
I
shutdown
12A
T
on
/T
off
1.5
s
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1
Packages
3-Lead D
2
Pak
IPS031S
3-Lead TO-220
IPS031
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS031(S)
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous drain to source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 60
o
C/W, Tj = 125
o
C) IPS031
--
3.1
A
(TAmbient = 85
o
C, IN = 5V, rth = 80
o
C/W, Tj = 125
o
C) IPS031S
--
2.8
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance free air
--
60
--
Rth 2
Thermal resistance junction to case
--
3
--
Rth 1
Thermal resistance with standard footprint
--
80
--
Rth 2
Thermal resistance with 1" square footprint
--
60
--
Rth 3
Thermal resistance junction to case
--
3
--
Thermal Characteristics
TO-220
D
2
PAK (SMD220)
o
C/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard foot-
print with 70
m copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
rth=62
o
C/W IPS031
--
2.8
TO220 free air
rth=5
o
C/W IPS031
--
18
TO220 with Rth=5
o
C/W
rth=80
o
C/W IPS031S
--
2.2
SMD220 Std. footprint
Isd
pulsed
Diode max. pulsed current
(1)
--
18
Pd
Maximum power dissipation
(1)
(rth=62
o
C/W) IPS031
--
2
(rth=80
o
C/W) IPS031S
--
1.56
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
--
300
V
W
A
o
C
kV
IPS031(S)
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
10
14
18
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10 40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
20
45
60
Rds(on)
ON state resistance Tj = 150
o
C
--
75
100
Idss
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to source clamp voltage 1
47
52
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to source clamp voltage 2
50
53
60
Vin
clamp
IN to source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5
, Rinput = 50
,
100
s pulse,T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.3
0.6
Tr
Rise time
0.4
1
2
Trf
Time to 130% final Rds(on)
--
8
--
Toff
Turn-off delay time
0.8
2
3.5
Tf
Fall time
0.5
1.5
2.5
Qin
Total gate charge
--
11
--
nC
Vin = 5V
See figure 2
See figure 2
s
A
A
IPS031(S)
4
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Lead Assignments
Part Number
1 2 3
In D S
TO-220
IPS031
D
2
PAK (SMD220)
IPS031S
1 3
In D S
2 (D)
2 (D)
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
300
S
Q
R
Q
T > 165c
I > 1sd
Functional Block Diagram
All values are typical
IPS031(S)
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5
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
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