Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60153-J
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165
o
C or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Package
Product Summary
R
ds(on)
500m
(max)
V
clamp
50V
I
shutdown
2A
T
on
/T
off
1.5
s
8-Lead SOIC
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1
Typical Connection
S
Q
Load
D
S
control
IN
R in series
(if needed)
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS042G
2
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
31
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
o
C unless otherwise specified). PCB mounting uses the standard footprint with 70
m
copper thickness.
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
--
47
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd
cont.
Diode max. continuous current
(1)
(for all Isd mosfets, rth=125
o
C/W)
--
1.2
Isd
pulsed
Diode max. pulsed current
(1)
--
3
Pd
Maximum power dissipation
(1)
(for all Pd mosfets, rth=125
o
C/W)
--
1
W
ESD1
Electrostatic discharge voltage
(Human Body)
--
4
C=100pF, R=1500
,
ESD2
Electrostatic discharge voltage
(Machine Model)
--
0.5
C=200pF, R=0
,
L=10
H
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
V
A
kV
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth1
Thermal resistance with standard footprint
(2 mosfets on)
--
100
--
Rth2
Thermal resistance with standard footprint
(1 mosfet on)
--
125
--
Rth3
Thermal resistance with 1" square footprint
(2 mosfets on)
--
65
--
Thermal Characteristics
o
C/W
o
C
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max. Units
Vds (max) Continuous Drain to Source voltage
--
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current (both mosfets at this current)
Tamb=85
o
C
TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C
--
0.53
A
Rin
Recommended resistor in series with IN pin
1
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
--
1
S
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
IPS042G
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3
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tsd
Over temperature threshold
--
165
--
o
C
See fig. 1
Isd
Over current threshold
1.1
1.7
2.2
A
See fig. 1
V
reset
IN protection reset threshold
1.5
2.3
3
V
Treset
Time to reset protection
2
10
40
s Vin = 0V, Tj = 25
o
C
EOI_OT
Short circuit energy (see application note)
--
400
--
J
Vcc = 14V
Protection Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
o
C
--
370
500
Tj = 150
o
C
--
590
900
Idss1
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
o
C
@Tj=25
o
C
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
o
C
@Tj=25
o
C
V
clamp 1
Drain to Source clamp voltage 1
47
52
56
Id = 20mA
(see Fig.3 & 4)
V
clamp 2
Drain to Source clamp voltage 2
50
53
60
Vin
clamp
IN to Source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vin th
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown
(see Fig.3 & 4)
V
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 20
, Rinput = 1k
,
100
s
pulse, T
j
= 25
o
C, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.2
0.5
Tr
Rise time
0.5
1.3
2.5
Trf
Time to 130% final Rds(on)
--
5
--
Toff
Turn-off delay time
0.5
1.6
2.5
Tf
Fall time
0.5
1.5
2.5
Qin
Total gate charge
--
1
--
nC
Vin = 5V
See figure 2
See figure 2
s
A
IPS042G
4
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Lead Assignments
8 Lead SOIC
1
S1 In1 S2 In2
D1 D1 D2 D2
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8.1 V
80
A
47 V
I sense
200 k
4000
S
Q
R
Q
T > 165c
I > 1sd
IPS042G
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5
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on
Td off
tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 c)
Vin
Ids
Isd
I shutdown
T
T shutdown
t < T reset
t > T reset
5 V
0 V
14 V
IN
D
S
5 v
0 v
L
R
+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuit
Ids
Vds
Vin
T clamp
Vds clamp
( Vcc )
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
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