Data Sheet No. PD-6.078
IR04H420
HIGH VOLTAGE HALF-BRIDGE
Features
n
Output Power MOSFETs in half-bridge configuration
n
500V Rated Breakdown Voltage
n
High side gate drive designed for bootstrap operation
n
Matched propagation delay for both channels
n
Independent high and low side output channels
n
Undervoltage lockout
n
5V Schmitt-triggered input logic
n
Half-Bridge output in phase with IN
n
Cross conduction prevention logic
n
Internally set dead time
n
Shut down input turns off both channels
Description
The IR04H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in
phase with the logic compatible input signals. The
output features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the half-
bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
Product Summary
V
IN
(max)
500V
t
on/off
130 ns
t
rr
270 ns
R
DS(on)
3.0
P
D
(T
A
= 25 C)
2.0W
Package
IR04H420
9506
Typical Connection
T O L O A D
I R 0 4 H 4 2 0
C O M
C C
V
V
I N
B
V
U P T O 5 0 0 V D C B U S
V O
C O M
V I N
1
2
3
4
6
9
7
C C
V
I N
I N
S D
S D
IR04H420
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol
Definition
Min.
Max.
Units
V
IN
High Voltage Supply
-0.3
500
V
B
High Side Floating Supply Absolute Voltage
-0.3
525
VO
Half-Bridge Output Voltage
-0.3
V
IN
+ 0.3
V
V
IH
Logic Input Voltage (IN & SD)
-0.3
V
CC
+ 0.3
V
CC
Low Side and Logic Fixed Supply Voltage
-0.3
25
dv/dt
Peak Diode Recovery dv/dt
---
3.5
V/ns
P
D
Package Power Dissipation @ T
A
+25C
---
2.00
W
R
JA
Thermal Resistance, Junction to Ambient
---
60
C/W
T
J
Junction Temperature
-55
150
T
S
Storage Temperature
-55
150
C
T
L
Lead Temperature (Soldering, 10 seconds)
---
300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Parameter
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Absolute Voltage
VO + 10
VO + 20
V
IN
High Voltage Supply
---
500
V
VO
Half-Bridge Output Voltage
(note 1)
500
V
CC
Low Side and Logic Fixed Supply Voltage
10
20
V
IH
Logic Input Voltage (IN & SD)
0
V
CC
I
D
Continuous Drain Current
(T
A
=
25C)
---
0.7
A
(T
A
=
85C)
---
0.5
T
A
Ambient Temperature
-40
125
C
Note 1:
Logic operational for VO of -5 to 500 V. Logic state held for VO
of -5 to - V
B.
IR04H420
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25C unless otherwise specified. Switching time waveform definitions are
shown in figure 2.
Parameter
T
A
= 25C
Symbol
Definition
Min.
Typ.
Max. Units
Test Conditions
t
on
Turn-On Propagation Delay (see note 2)
---
600
720
V
S
= 0 V
t
off
Turn-Off Propagation Delay (see note 2)
---
90
200
V
S
= 500 V
t
r
Turn-On Rise Time (see note 2)
---
80
120
ns
t
f
Turn-Off Fall Time (see note 2)
---
40
70
MT
Delay Matching, HS & LS Turn-On/Off
---
30
---
DT
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-On to LS Turn-Off
---
500
750
t
rr
Reverse Recovery Time (MOSFET Body Diode)
---
260
---
I
F
= 0.7 A
Q
rr
Reverse Recovery Charge (MOSFET Body Diode)
---
0.7
---
C
di/dt = 100A/s
Note 2:
Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate
input voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25C unless otherwise specified. The Input voltage and current levels are
referenced to COM.
Parameter
T
A
= 25C
Symbol
Definition
Min.
Typ. Max. Units
Test Conditions
Supply Characteristics
V
CCUV+
V
CC
Supply Undervoltage Positive Going
Threshold
8.8
9.3
9.8
V
V
CCUV-
V
CC
Supply Undervoltage Negative Going
Threshold
7.5
8.2
8.6
I
QCC
Quiescent V
CC
Supply Current
---
140
240
I
QBS
Quiescent V
BS
Supply Current
---
20
50
A
I
OS
Offset Supply Leakage Current
---
---
50
V
B
= V
S
= 500V
Input Characteristics
V
IH
Logic "1" Input Voltage
2.7
---
---
V
IL
Logic "0" Input Voltage
---
---
0.8
V
V
CC
= 10V to 20V
V
SD,TH+
SD Input Positive Going Threshold
2.7
---
---
V
SD,TH-
SD Input Negative Going Threshold
---
---
0.8
I
IN+
Logic "1" Input Bias Current
---
20
40
A
I
IN-
Logic "0" Input Bias Current
---
---
1.0
A
Output Characteristics
R
DS(on)
Static Drain-to-Source On-Resistance
---
3.0
---
I
D
= 700mA
V
SD
Diode Forward Voltage
---
0.8
---
V
T
j
= 150 C
IR04H420
Functional Block Diagram
IR2104
VO
COM
V
B
V
CC
VIN
IRFC420
IRFC420
1
2
3
4
6
9
7
IN
SD
Lead Definitions
Lead
Symbol
Description
V
CC
Logic and internal gate drive supply voltage.
IN
Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
SD
Logic input for shutdown
V
B
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is
needed to feed from V
CC
to V
B
.
V
IN
High voltage supply.
VO
Half-Bridge output.
COM
Logic and low side of Half-Bridge return.
Lead Assignments
V
CC
V0
VIN
IN SD COM
V
B
9
7
6
4
3
2
1
9 Lead SIP w/o Leads 5 & 8
IR04H420
IR04H420
IN
VO
___
SD
V+
0
IN(HO)
tr
ton
tf
toff
HO
50%
50%
90%
90%
10%
10%
VO
IN(LO)
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Definitions
IN (LO)
IN (HO)
HO
50%
50%
10%
LO
90%
MT
HO
LO
MT
Figure 3. Delay Matching Waveform Definitions
Figure 4. Deadtime Waveform Definitions
IN
HO
LO
50%
50%
10%
90%
90%
10%
DT
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