1
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Junction Size:
Square 185 mils
Wafer Size:
4"
V
RRM
Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
25TTS Series
PHASE CONTROL THYRISTORS
IR185BG12DCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.25 V
T
J
= 25C, I
T
= 16 A
V
RRM
Reverse Breakdown Voltage
1200 V
T
J
= 25C, I
RRM
= 100 A
(1)
I
GT
Max. Required DC Gate Current to Trigger
60 mA
T
J
= 25 C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J
= 25 C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 100 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
200 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
100% Al, (20m)
Chip Dimensions
185 x 185 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
350 m 10 m
Maximum Width of Sawing Line
130 m
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0202J rev. B 09/99
(1)
Nitrogen flow on die edge.
2
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IR185BG12DCB
IR
185
B
G
12
D
CB
1
2
3
1
- International Rectifier Device
2
- Chip Dimension in Mils
3
- Type of Device: B = Wire Bondable SCR
4
- Passivation Process: G = Glassivated MESA
5
- Voltage code: Code x 100 = V
RRM
6
- Metallization: D = Silver (Anode) - Aluminium (Cathode)
7
- CB
= Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
4
Device Code
Ordering Information Table
5
Outline Table
7
6
All dimensions are in microns
Bulletin I0202J rev. B 09/99
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