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Электронный компонент: IR20153SPbF

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Features
Floating channel designed for bootstrap operation
Fully operational up to 150V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11
s and 0.8
s
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Product Summary
V
OFFSET
150V max.
I
O
+/-
400mA @ VBS=7V,
1.5A @ VBS=16V
V
OUT
5-20V
t
on/off
1.0 and 0.3
s
IR20153S & (PbF)
www.irf.com
1
Typical Connection
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
Preliminary Data Sheet PD60214 Rev B
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
Package
8-Lead SOIC
VS
HOL
VB
VCC
GND
HOH
IN
RESET
VCC
IN
RESET
up to 150V
Load
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2
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IR20153S & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to GND, all currents are defined positive into any lead. This is a stress only rating
and operation of the device at these or any conditions exceeding those indicated in the operational sections of this
specifications is not implied.
Symbol
Definition
Min.
Max.
Units
V
B
High side driver output stage voltage
-5.0
170
V
S
High side floating supply offset voltage
- 8.0
150
V
HO
Output voltage gate high connection
V
S
- 0.3
V
B
+ 0.3
V
CC
Low side fixed supply voltage
-0.3
25
V
IN
Input voltage (IN and RESET)
-0.3
V
CC
+0.3
dV/dt
Allowable offset voltage slew rate
--
50
V/nsec
T
J
Junction temperature
-55
150
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
--
300
V
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 2. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to GND. The VS offset rating is tested
with all suppliers biased at Vcc=5V and VBS=7V.
C
Symbol
Definition
Min.
Max.
Units
V
B
High side driver output stage voltage
V
S
+ 5
V
S
+ 20
V
S
High side floating supply offset voltage
-1.6
150
V
HO
Output voltage gate high connection
V
S
V
B
V
CC
Supply voltage
5
20
V
IN
Input voltage (IN and RESET)
0
Vcc
T
A
Ambient temperature
-55
150
C
V
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3
IR20153S & (PbF)
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50
, C = 6.8nF (see Figure 3).
Unless otherwise noted, these specifications apply for an operating ambient temperature of T
A
=25
C.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
CCUV+
V
CC
supply undervoltage positive going threshold
--
--
4.3
V
CC
rising from 0V
V
CCUV-
V
CC
supply undervoltage negative going threshold
2.5
--
--
V
CC
dropping
from 5V
V
CCUVHYS
V
CC
supply undervoltage lockout hysteresis
0.01
0.3
0.60
IQCC
V
CC
supply current
--
--
400
uA
VCC = 3.6V & 6.5V
VBSUV+
VBS supply undervoltage positive going threshold
--
--
4.3
V
VBS rising from 0V
VBSUV-
VBS supply undervoltage negative going threshold
2.5
--
--
VBS dropping
from 5V
VBSUVHYS
VBS supply undervoltage lockout hysteresis
0.01
0.3
0.60
IQBS1
VBS supply current
--
--
100
A
static mode, VBS =
7V, IN = 0V or 5V
IQBS2
VBS supply current
--
--
200
A
static mode, VBS =
16V, IN = 0V or 5V
ILK
Offset supply leakage current
--
--
50
A
VB = VS = 150V
Io+1
Peak output source current
250
400
--
mA
Io+2
Peak output source current
800
1500
--
mA
VBS = 16V
tr1
Output rise time
--
0.2
0.4
sec
tr2
Output rise time
--
0.1
0.2
sec
VBS = 16V
Io-1
Peak output sink current
250
400
--
mA
IN = 5V
Io-2
Peak output sink current
800
1500
--
mA
VBS = 16V, IN = 5V
tf1
Output fall time
--
0.2
0.4
sec
IN = 5V
tf2
Output fall time
--
0.1
0.2
sec
VBS = 16V, IN = 5V
ton
Input-to-Output Turn-on propogation delay
--
1.0
2.0
sec
(50% input level to 10% output level)
toff
Input-to-Output Turn-off propogation delay
--
0.3
0.9
sec
(50% input level to 90% output level)
tres,off
RES-to-Output Turn-off propogation delay
--
0.3
0.9
sec
(50% input level to 90% [tphl] output levels)
V
VBS Supply Characteristics
VB. VS Supply Characteristics
Gate Driver Characteristics
VCC Supply Characteristics
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4
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IR20153S & (PbF)
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
CC
Supply Characteristics
tres,on
RES-to-Output Turn-On Propogation Delay
-
1.0
2.0
sec
(50% input level to 10% [tplh] output levels)
VINH
High Logic Level Input Threshold
3
-
-
V
VINL
Low Logic Level Input Threshold
-
-
1.4
V
RIN
High Logic Level Input Resistance
40
100
220
k
VH_RES
High Logic Level RES Input Threshold
3
-
-
V
VL_RES
Low Logic Level RES Input Threshold
-
-
1.4
V
RRES
High Logic Level RES Input Resistance
40
100
220
k
ton_rech
Recharge Transistor Turn-On Propogation Delay
7
11
15
sec
VS = 5V
toff_rech
Recharge Transistor Turn-Off Propogation Delay
-
0.3
0.9
sec
VRECH
Recharge Output Transistor On-State Voltage Drop
-
-
1.2
V
IS = 1mA, IN = 5V
DTHOFF
High Side Turn-Off to Recharge gate Turn-On
7
11
15
sec
DTHON
Recharge gate Turn-Off to High Side Turn-On0.
0.4
0.8
1.5
sec
Electrical Characteristics
Unless otherwise specified, VCC = 5V, VBS = 7V, VS = 0V, IN = 0V, RES = 5V, load R = 50
, C = 6.8nF (see Figure 3).
Unless otherwise noted, these specifications apply for an operating ambient temperature of T
A
=25
C.
Gate Driver Characteristics cont.
Input Characteristics
Recharge Characteristics
(see Figure 3a)
Deadtime Characteristics
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5
IR20153S & (PbF)
A True table for Vcc, VBS, RESET, IN, H
O
and RechFET is shown as follows. This truth table is for ACTIVE
LOW IN.
RESET = HIGH indicates that high side MOSFET is allowed to be turned on.
RESET = LOW indicates that high side MOSFET is OFF.
IN = LOW indicates that high side MOSFET is on.
IN = HIGH indicates that high side MOSFET is off.
RechFET = ON indicates that the recharge MOSFET is on.
RechFET = OFF indicates that the recharge MOSFET is off.
1
Note: Refer to the RESET functionality graph of Figure 7, for VCC and VBS voltage ranges under which
the functionality is normal.
Vcc
VBS RESET- IN-
H
O
RechFET
<VccUVLO- <VBSUVLO-
HIGH HIGH OFF
ON
<VccUVLO- <VBSUVLO-
HIGH LOW OFF
ON
<VccUVLO- <VBSUVLO-
LOW HIGH OFF
ON
<VccUVLO- <VBSUVLO-
LOW LOW OFF
ON
<VccUVLO- >VBSUVLO+
HIGH HIGH OFF
ON
<VccUVLO- >VBSUVLO+
HIGH LOW OFF
ON
<VccUVLO- >VBSUVLO+
LOW HIGH OFF
ON
<VccUVLO- >VBSUVLO+
LOW LOW OFF
ON
>VccUVLO+ <VBSUVLO-
HIGH HIGH OFF
ON
>VccUVLO+ <VBSUVLO-
HIGH LOW OFF
OFF
>VccUVLO+ <VBSUVLO-
LOW HIGH OFF
ON
>VccUVLO+ <VBSUVLO-
LOW LOW OFF
ON
>VccUVLO+ >VBSUVLO+
HIGH HIGH OFF
ON
1
>VccUVLO+ >VBSUVLO+
HIGH LOW ON
OFF
1
>VccUVLO+ >VBSUVLO+ LOW
HIGH
OFF
ON
1
>VccUVLO+ >VBSUVLO+
LOW LOW OFF
ON
1