Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
CMOS Schmitt-triggered inputs with pull-down
Output in phase with input (IR2117) or out of
phase with input (IR2118)
Description
The IR2117/IR2118(S) is a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS outputs. The out-
put driver features a high pulse current buffer stage
designed for minimum cross-conduction. The float-
ing channel can be used to drive an N-channel power
MOSFET or IGBT in the high or low side configura-
tion which operates up to 600 volts.
Preliminary Data Sheet No. PD60146
-
L
SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.)
125 & 105 ns
Packages
Typical Connection
8-Lead PDIP
IR2117/IR2118
8-Lead SOIC
IR2117S/IR2118S
IR2117
IR2118
V
CC
V
B
V
S
HO
IN
COM
up to 600V
V
CC
IN
TO
LOAD
V
CC
V
B
V
S
HO
IN
COM
up to 600V
V
CC
IN
TO
LOAD
IR2117/IR2118 (
S
)
www.irf.com
1
(Refer to Lead Assignments for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for
proper circuit board layout.
IR2117/IR2118 (
S
)
2
www.irf.com
Symbol
Definition
Min.
Max.
Units
V
B
High side floating supply voltage
-0.3
625
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Logic supply voltage
-0.3
25
V
IN
Logic input voltage
-0.3
V
CC
+ 0.3
dV
s
/dt
Allowable offset supply voltage transient (figure 2)
--
50
V/ns
P
D
Package power dissipation @ T
A
+25C
(8 lead PDIP)
--
1.0
(8 lead SOIC)
--
0.625
Rth
JA
Thermal resistance, junction to ambient
(8 lead PDIP)
--
125
(8 lead SOIC)
--
200
T
J
Junction temperature
--
150
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Symbol
Definition
Min.
Max.
Units
V
B
High side floating supply absolute voltage
V
S
+ 10
V
S
+ 20
V
S
High side floating supply offset voltage
Note 1
600
V
HO
High side floating output voltage
V
S
V
B
V
CC
Logic supply voltage
10
20
V
IN
Logic input voltage
0
V
CC
T
A
Ambient temperature
-40
125
C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
W
C/W
V
C
V
IR2117/IR2118 (
S
)
www.irf.com
3
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay
--
125
200
V
S
= 0V
t
off
Turn-off propagation delay
--
105
180
V
S
= 600V
t
r
Turn-on rise time
--
80
130
t
f
Turn-off fall time
--
40
65
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
ns
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
input voltage - logic "1" (IR2117) logic "0" (IR2118)
9.5
--
--
V
IL
Input voltage - logic "0" (IR2117) logic "1" (IR2118)
--
--
6.0
V
OH
High level output voltage, V
BIAS
- V
O
--
--
100
I
O
= 0A
V
OL
Low level output voltage, V
O
--
--
100
I
O
= 0A
I
LK
Offset supply leakage current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current
--
50
240
V
IN
= 0V or V
CC
I
QCC
Quiescent V
CC
Supply Current
--
70
340
V
IN
= 0V or V
CC
I
IN+
Logic "1" input bias current (IR2117)
V
IN
= V
CC
(IR2118)
V
IN
= 0V
I
IN-
Logic "0" input bias current (IR2117)
V
IN
= 0V
(IR2118)
V
IN
= V
CC
V
BSUV+
V
BS
supply undervoltage positive going threshold
7.6
8.6
9.6
V
BSUV-
V
BS
supply undervoltage negative going threshold
7.2
8.2
9.2
V
CCUV+
V
CC
supply undervoltage positive going threshold
7.6
8.6
9.6
V
CCUV-
V
CC
supply undervoltage negative going threshold
7.2
8.2
9.2
I
O+
Output high short circuit pulsed current
200
250
--
V
O
= 0V
V
IN
= Logic "1"
PW
10 s
I
O-
Output low short circuit pulsed current
420
500
--
V
O
= 15V
V
IN
= Logic "0"
PW
10 s
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mA
V
V
mV
-- 20
40
A
-- --
1.0
IR2117/IR2118 (
S
)
4
www.irf.com
Functional Block Diagram (IR2117)
V
B
V
CC
PULSE
GEN
COM
UV
DETECT
HV
LEVEL
SHIFT
PULSE
FILTER
UV
DETECT
HO
V
S
R
S
R
Q
IN
Functional Block Diagram (IR2118)
PULSE
GEN
IN
UV
DETECT
HO
V
S
V
B
Q
S
R
R
PULSE
FILTER
HV
LEVEL
SHIFT
UV
DETECT
V
CC
COM
IR2117/IR2118 (
S
)
www.irf.com
5
Lead Definitions
Symbol
Description
V
CC
Logic and gate drive supply
IN
Logic input for gate driver output (HO), in phase with HO (IR2117)
IN
Logic input for gate driver output (HO), out of phase with HO (IR2118)
COM
Logic ground
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2118
IR2118S
1
2
3
4
8
7
6
5
VCC
IN
COM
VB
HO
VS
1
2
3
4
8
7
6
5
VCC
IN
COM
VB
HO
VS
8 Lead PDIP
8 Lead SOIC
IR2117
IR2117S
1
2
3
4
8
7
6
5
VCC
IN
COM
VB
HO
VS
1
2
3
4
8
7
6
5
VCC
IN
COM
VB
HO
VS
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