V
CC
V
CC
CS
OUT
V
S
COM
IN
ERR
TO
LOAD
V
CC
IN
Features
n
Gate drive supply range from 12 to 18V
n
Undervoltage lockout
n
Current detection and limiting loop to limit driven
power transistor current
n
Error lead indicates fault conditions and programs
shutdown time
n
Output in phase with input
Description
The IR2121 is a high speed power MOSFET and
IGBT driver with over-current limiting protection cir-
cuitry. Latch immune CMOS technology enables rug-
gedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs.
The output driver features a high pulse current buffer
stage designed for minimum cross-conduction. The
protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage.
Cycle-by-cycle shutdown is programmed by an ex-
ternal capacitor which directly controls the time in-
terval between detection of the over-current limiting
condition and latched shutdown. The output can be
used to drive an N-channel power MOSFET or IGBT
in the low side configuration.
Data Sheet No. PD-6.018D
IR2121
CURRENT LIMITING LOW SIDE DRIVER
Product Summary
V
OFFSET
5V max.
I
O
+/-
1A / 2A
V
OUT
12 - 18V
V
CSth
230 mV
t
on/off
(typ.)
150 & 150 ns
Package
Typical Connection
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-91
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IR2121
B-92 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
CC
Fixed Supply Voltage
-0.3
25
V
S
Gate Drive Return Voltage
V
CC
- 25
V
CC
+ 0.3
V
O
Output Voltage
V
S
- 0.3
V
CC
+ 0.3
V
IN
Logic Input Voltage
-0.3
V
CC
+ 0.3
V
ERR
Error Signal Voltage
-0.3
V
CC
+ 0.3
V
CS
Current Sense Voltage
V
S
- 0.3
V
CC
+ 0.3
P
D
Package Power Dissipation @ T
A
+25C
--
1.0
W
R
JA
Thermal Resistance, Junction to Ambient
--
125
C/W
T
J
Junction Temperature
--
150
T
S
Storage Temperature
-55
150
C
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter
Value
Symbol
Definition
Min.
Max.
Units
V
CC
Fixed Supply Voltage
V
S
+ 10
V
S
+ 20
V
S
Gate Drive Return Voltage
-5
5
V
O
Output Voltage
V
S
V
CC
V
IN
Logic Input Voltage
0
V
CC
V
ERR
Error Signal Voltage
0
V
CC
V
CS
Current Sense Signal Voltage
V
S
V
CC
T
A
Ambient Temperature
-40
125
C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
V
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-93
Parameter
Value
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay
7
--
150
200
t
off
Turn-Off Propagation Delay
8
--
150
190
t
sd
ERR Shutdown Propagation Delay
9
--
1.7
2.2
s
t
r
Turn-On Rise Time
10
--
43
60
t
f
Turn-Off Fall Time
11
--
26
35
t
cs
CS Shutdown Propagation Delay
12
--
0.7
1.2
t
err
CS to ERR Pull-Up Propagation Delay
13
--
9.0
12
C
ERR
= 270 pF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
) = 15V, C
L
= 3300 pF and T
A
= 25C unless otherwise specified. The dynamic electrical characteristics are
defined in Figures 2 through 5.
Parameter
Value
Symbol
Definition
Figure Min.
Typ. Max. Units Test Conditions
V
IH
Logic "1" Input Voltage
14
2.2
--
--
V
CC
= 12V to 18V
V
IL
Logic "0" Input Voltage
15
--
--
0.8
V
CC
= 12V to 18V
V
CSTH+
CS Input Positive Going Threshold
16
150
230
320
V
CC
= 12V to 18V
V
CSTH-
CS Input Negative Going Threshold
17
130
200
260
V
CC
= 12V to 18V
V
OH
High Level Output Voltage, V
BIAS
- V
O
18
--
--
100
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
19
--
--
100
I
O
= 0A
I
QCC
Quiescent V
CC
Supply Current
20
--
1.1
2.2
mA
V
IN
= V
CS
= 0V or 5V
I
IN+
Logic "1" Input Bias Current
21
--
4.5
10
V
IN
= 5V
I
IN-
Logic "0" Input Bias Current
22
--
--
1.0
V
IN
= 0V
I
CS+
"High" CS Bias Current
23
--
4.5
10
V
CS
= 3V or 5V
I
CS-
"Low" CS Bias Current
24
--
--
1.0
V
CS
= 0V
V
CCUV+
V
CC
Supply Undervoltage Positive Going
25
8.3
8.9
9.6
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
26
7.3
8.0
8.7
Threshold
I
ERR
ERR Timing Charge Current
27
65
100
130
V
IN
= 5V, V
CS
= 3V
ERR < V
ERR+
I
ERR+
ERR Pull-Up Current
28
8.0
15
--
V
IN
= 5V, V
CS
= 3V
ERR > V
ERR+
I
ERR-
ERR Pull-Down Current
29
16
30
--
V
IN
= 0V
I
O+
Output High Short Circuit Pulsed Current
30
1.0
1.6
--
V
O
= 0V, V
IN
= 5V
PW
10 s
I
O-
Output Low Short Circuit Pulsed Current
31
2.0
3.3
--
V
O
= 15V, V
IN
= 0V
PW
10 s
Static Electrical Characteristics
V
BIAS
(V
CC
) = 15V and T
A
= 25C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM.
The V
O
and I
O
parameters are referenced to V
S
.
ns
ns
s
V
A
mA
A
V
A
mV
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IR2121
B-94 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
V
CC
IN
ERR
COM
1.8V
UV
DETECT
ERROR
TIMING
PRE
DRIVER
500 ns
BLANK
V
CC
OUT
V
S
CS
1.8V
AMPLIFER
-
+
0.23V
BUFFER
COMPARATOR
Lead Definitions
Lead
Symbol
Description
V
CC
Logic and gate drive supply
IN
Logic input for gate driver output (OUT), in phase with OUT
ERR
Serves multiple functions; status reporting, linear mode timing and cycle by cycle logic
shutdown
COM
Logic ground
OUT
Gate drive output
V
S
Gate drive supply return
CS
Current sense input to current sense comparator
Functional Block Diagram
8 Lead DIP
IR2121
Part Number
Lead Assignments
To Order
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-95
Thickness of Gate Oxide
800
Connections
Material
Poly Silicon
First
Width
4 m
Layer
Spacing
6 m
Thickness
5000
Material
Al - Si (Si: 1.0% 0.1%)
Second
Width
6 m
Layer
Spacing
9 m
Thickness
20,000
Contact Hole Dimension
8 m X 8 m
Insulation Layer
Material
PSG (SiO
2
)
Thickness
1.5 m
Passivation
Material
PSG (SiO
2
)
(1)
Thickness
1.5 m
Passivation
Material
Proprietary*
(2)
Thickness
Proprietary*
Method of Saw
Full Cut
Method of Die Bond
Ablebond 84 - 1
Wire Bond
Method
Thermo Sonic
Material
Au (1.0 mil / 1.3 mil)
Leadframe
Material
Cu
Die Area
Ag
Lead Plating
Pb : Sn (37 : 63)
Package
Types
8 Lead PDIP
Materials
EME6300 / MP150 / MP190
Remarks:
* Patent Pending
Device Information
Process & Design Rule
HVDCMOS 4.0 m
Transistor Count
410
Die Size
104 X 111 X 26 (mil)
Die Outline
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IR2121
B-96 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
ERR
CS
IN
OUT
Figure 3. Switching Time Waveform Definitions
Figure 4. ERR Shutdown Waveform Definitions
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Test Circuit
Figure 5. CS Shutdown Waveform Definitions
Figure 6. CS to ERR Waveform Definitions
4
IR2121
VCC
OUT
IN
tr
ton
tf
toff
OUT
50%
50%
90%
90%
10%
10%
CS
tcs
OUT
50%
90%
CS
tcs
HO
50%
90%
CS
terr
ERR
50%
50%
1.8V
dt
dt
C
dV
I
C
1.8V
100 uA
ERR
=
=
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-97
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
ERR to Output Shutdown Delay Time (
s)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
T
urn-Off Delay Time (n
s)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
T
urn-On Delay Time (n
s)
Max.
Typ.
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
Figure 9B. ERR to Output Shutdown vs. Voltage
Figure 9A. ERR to Output Shutdown vs. Temperature
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-On Time (n
s)
Max.
Typ.
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Time (ns
)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
ERR to Output Shutdown Delay Time (
s)
Max.
Typ.
To Order
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IR2121
B-98 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
0.00
0.40
0.80
1.20
1.60
2.00
-50
-25
0
25
50
75
100
125
Temperature (C)
C
S to Output Shutdown Delay Time (
s)
Max.
Typ.
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
Temperature (C)
T
urn-On Rise Time (n
s)
Max.
Typ.
Figure 11A. Turn-Off Fall Time vs. Temperature
Figure 11B. Turn-Off Fall Time vs. Voltage
Figure 10A. Turn-On Rise Time vs. Temperature
Figure 10B. Turn-On Rise Time vs. Voltage
Figure 12A. CS to Output Shutdown vs. Temperature
Figure 12B. CS to Output Shutdown vs. Voltage
0
20
40
60
80
100
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-On Rise Time (n
s)
Max.
Typ.
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125
Temperature (C)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0
20
40
60
80
100
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
T
urn-Off Fall Time (ns
)
Max.
Typ.
0.00
0.40
0.80
1.20
1.60
2.00
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
C
S to Output Shutdown Delay Time (
s)
Max.
Typ.
To Order
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-99
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
L
ogic "1" Input Threshold (V
)
Min.
Figure 14A. Logic "1" Input Threshold vs. Temperature
Figure 14B. Logic "1" Input Threshold vs. Voltage
Figure 13B. CS to ERR Pull-Up vs. Voltage
Figure 13A. CS to ERR Pull-Up vs. Temperature
Figure 15A. Logic "0" Input Threshold vs. Temperature
Figure 15B. Logic "0" Input Threshold vs. Voltage
0.0
4.0
8.0
12.0
16.0
20.0
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
CS to ERR Pull-Up Delay Time (
s)
Max.
T yp.
0.0
4.0
8.0
12.0
16.0
20.0
-50
-25
0
25
50
75
100
125
Temperature (C)
CS to ERR Pull-Up Delay Time (
s)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
L
ogic "1" Input Threshold (V
)
Min.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
L
ogic "0" Input Threshold (V
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
L
ogic "0" Input Threshold (V
)
Max.
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IR2121
B-100 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
0.00
0.20
0.40
0.60
0.80
1.00
-50
-25
0
25
50
75
100
125
Temperature (C)
H
igh Level Output Voltage (V
)
Max.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
C
S Input Positive Going Threshold (mV
)
Min.
Typ.
Max.
Figure 17A. CS Input Threshold (-) vs. Temperature
Figure 17B. CS Input Threshold (-) vs. Voltage
Figure 16A. CS Input Threshold (+) vs. Temperature
Figure 16B. CS Input Threshold (+) vs. Voltage
Figure 18A. High Level Output vs. Temperature
Figure 18B. High Level Output vs. Voltage
0
100
200
300
400
500
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
C
S Input Positive Going Threshold (mV
)
Min.
Typ.
Max.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
C
S Input Negative Going Threshold (mV
)
Max.
Typ.
Min.
0
100
200
300
400
500
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
C
S Input Negative Going Threshold (mV
)
Min.
Typ.
Max.
0.00
0.20
0.40
0.60
0.80
1.00
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
H
igh Level Output Voltage (V
)
Max.
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-101
0.00
0.20
0.40
0.60
0.80
1.00
-50
-25
0
25
50
75
100
125
Temperature (C)
L
ow Level Output Voltage (V
)
Max.
Figure 19A. Low Level Output vs. Temperature
Figure 19B. Low Level Output vs. Voltage
0.00
0.20
0.40
0.60
0.80
1.00
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
L
ow Level Output Voltage (V
)
Max.
Figure 21A. Logic "1" Input Current vs. Temperature
Figure 21B. Logic "1" Input Current vs. Voltage
Figure 20A. V
CC
Supply Current vs. Temperature
Figure 20B. V
CC
Supply Current vs. Voltage
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
Temperature (C)
Logic "1" Input Bias Current (A
)
Max.
Typ.
0
5
10
15
20
25
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
Logic "1" Input Bias Current (A
)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
V
CC
Supply Current (mA
)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
CC
Supply Voltage (V)
V
CC
Supply Current (mA
)
Max.
Typ.
To Order
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IR2121
B-102 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
Figure 22A. Logic "0" Input Current vs. Temperature
Figure 22B. Logic "0" Input Current vs. Voltage
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
Logic "0" Input Bias Current (A
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
Logic "0" Input Bias Current (A
)
Max.
Figure 24A. "Low" CS Bias Current vs. Temperature
Figure 24B. "Low" CS Bias Current vs. Voltage
Figure 23A. "High" CS Bias Current vs. Temperature
Figure 23B. "High" CS Bias Current vs. Voltage
0.0
5.0
10.0
15.0
20.0
25.0
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
"
High" CS Bias Current (A
)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
"
Low" CS Bias Current (A
)
Max.
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
"
Low" CS Bias Current (A
)
Max.
0.0
5.0
10.0
15.0
20.0
25.0
-50
-25
0
25
50
75
100
125
Temperature (C)
"
High" CS Bias Current (A
)
Max.
Typ.
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-103
Figure 27A. ERR Timing Charge Current vs. Temperature
Figure 27B. ERR Timing Charge Current vs. Voltage
Figure 25. V
CC
Undervoltage (+) vs. Temperature
Figure 26. V
CC
Undervoltage (-) vs. Temperature
Figure 28A. ERR Pull-Up Current vs. Temperature
Figure 28B. ERR Pull-Up Current vs. Voltage
0
50
100
150
200
250
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
ERR Timing Charge Current (A
)
Min.
Typ.
Max.
0.0
5.0
10.0
15.0
20.0
25.0
-50
-25
0
25
50
75
100
125
Temperature (C)
ERR Pull-Up Current (A
)
Typ.
Min.
0.0
5.0
10.0
15.0
20.0
25.0
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
ERR Pull-Up Current (A
)
Min.
Typ.
6.0
7.0
8.0
9.0
10.0
11.0
-50
-25
0
25
50
75
100
125
Temperature (C)
V
CC
Undervoltage Lockout + (V
)
Max.
Typ.
Min.
6.0
7.0
8.0
9.0
10.0
11.0
-50
-25
0
25
50
75
100
125
Temperature (C)
V
CC
Undervoltage Lockout - (V
)
Max.
Typ.
Min.
0
50
100
150
200
250
-50
-25
0
25
50
75
100
125
Temperature (C)
ERR Timing Charge Current (A
)
Max.
Typ.
Min.
To Order
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IR2121
B-104 C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
O
utput Sink Current (A
)
Typ.
Min.
0.00
0.50
1.00
1.50
2.00
2.50
-50
-25
0
25
50
75
100
125
Temperature (C)
O
utput Source Current (A
)
Typ.
Min.
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
Temperature (C)
E
RR Pull-Down Current (A
)
Typ.
Min.
Figure 30A. Output Source Current vs.Temperature
Figure 30B. Output Source Current vs. Voltage
Figure 29A. ERR Pull-Down Current vs.Temperature
Figure 29B. ERR Pull-Down Current vs. Voltage
Figure 31A. Output Sink Current vs.Temperature
Figure 31B. Output Sink Current vs. Voltage
0
10
20
30
40
50
10
12
14
16
18
20
V
CC
Logic Supply Voltage (V)
E
RR Pull-Down Current (A
)
Max.
Typ.
0.00
0.50
1.00
1.50
2.00
2.50
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
O
utput Source Current (A
)
Min.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
O
utput Sink Current (A
)
Min.
Typ.
To Order
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IR2121
C
ONTROL
I
NTEGRATED
C
IRCUIT
D
ESIGNERS
M
ANUAL
B-105
Figure 32A. Turn-On Time vs. Input Temperature
Figure 32B. Turn-Off Time vs. Input Voltage
Figure 33. Maximum V
S
Negative Offset vs. Supply
Voltage
0
100
200
300
400
500
5
7.5
10
12.5
15
Input Voltage (V)
T
urn-On Time (n
s)
Typ.
V
CC
= 15V
0
100
200
300
400
500
5
7.5
10
12.5
15
Input Voltage (V)
T
urn-Off Time (ns
)
Typ.
V
CC
= 15V
-15.00
-12.00
-9.00
-6.00
-3.00
0.00
10
12
14
16
18
20
V
BS
Floating Supply Voltage (V)
V
S
Offset Supply Voltage (V
)
Typ.
Typ.
To Order
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