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Preliminary Data Sheet No. PD60130-J
CURRENT SENSING SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/-
110 mA / 110 mA
V
OUT
10 - 20V
V
CSth
500 mV
t
on/off
(typ.)
250 & 200 ns
Typical Connection
Packages
8-Lead PDIP
8-Lead SOIC
V
CC
V
B
CS
HO
V
S
COM
IN
FAULT
V
CC
IN
FAULT
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1
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT lead indicates shutdown has occured
Output out of phase with input
Description
The IR2122(S) is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS or LSTTL outputs, down to
3.3V. The protection circuity detects over-current in
the driven power transistor and terminates the gate
drive voltage. An open drain
FAULT signal is pro-
vided to indicate that an over-current shutdown has
occurred. The output driver features a high pulse
current buffer stage designed for minimum cross-con-
duction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
or low side configuration which operates up to 600
volts.
IR2122(S)
(Refer to Lead Assignments for correct pin configuration). This/These
diagram(s) show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
IR2122(S)
2
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Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.3
625
V
S
High Side Floating Offset Voltage
V
B
- 25
V
B
+ 0.3
V
HO
High Side Floating Output Voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Logic Supply Voltage
-0.3
25
V
V
IN
Logic Input Voltage
-0.3
V
CC
+ 0.3
V
FLT
FAULT
Output Voltage
-0.3
V
CC
+ 0.3
V
CS
Current Sense Voltage
V
S
- 0.3
V
B
+ 0.3
dV
s
/dt
Allowable Offset Supply Voltage Transient
--
50
V/ns
P
D
Package Power Dissipation @ T
A
+25C
(8 Lead DIP)
--
1.0
(8 Lead SOIC)
--
0.625
R
THJA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
--
125
(8 Lead SOIC)
--
200
T
J
Junction Temperature
--
150
T
S
Storage Temperature
-55
150
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
V
S
+ 13
V
S
+ 20
V
S
High Side Floating Offset Voltage
Note 1
600
V
HO
High Side Floating Output Voltage
V
S
V
B
V
CC
Logic Supply Voltage
13
20
V
V
IN
Logic Input Voltage
0
V
CC
V
FLT
FAULT
Output Voltage
0
V
CC
V
CS
Current Sense Signal Voltage
V
S
V
S
+ 5
T
A
Ambient Temperature
-40
150
C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
C/W
W
C
IR2122(S)
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Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V
IH
Logic "0" Input Voltage (OUT = LO)
3.0
--
--
V
CC
= 10V to 20V
V
IL
Logic "1" Input Voltage (OUT = HI)
--
--
0.8
V
CC
= 10V to 20V
V
CSTH+
CS Input Positive Going Threshold
350
500
650
V
CC
= 10V to 20V
V
OH
High Level Output Voltage, V
BIAS
- V
O
--
--
100
I
O
= 0A
V
OL
Low Level Output Voltage, V
O
--
--
100
mV
I
O
= 0A
I
LK
Offset Supply Leakage Current
--
--
50
V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
Supply Current
--
150
350
V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
Supply Current
--
60
120
V
IN
= 0V or 5V
I
IN+
Logic "1" Input Bias Current
--
7.0
15
A
V
IN
= 0V
I
IN-
Logic "0" Input Bias Current
--
--
1.0
V
IN
= 5V
I
CS+
"High" CS Bias Current
--
--
1.0
V
CS
= 3V
I
CS-
"High" CS Bias Current
--
--
1.0
V
CS
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive Going
10.0
11.4
13.0
Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative Going
9.5
10.4
12.5
Threshold
I
O+
Output High Short Circuit Pulsed Current
110
130
--
V
O
= 0V, V
IN
= 0V
PW
10
s
I
O-
Output Low Short Circuit Pulsed Current
110
130
--
V
O
= 15V, V
IN
= 5V
PW
10
s
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay
--
250
--
V
S
= 0V
t
off
Turn-Off Propagation Delay
--
200
--
V
S
= 600V
t
r
Turn-On Rise Time
--
250
--
C
L
= 1000 pF
t
f
Turn-Off Fall Time
--
250
--
C
L
= 1000 pF
t
bl
Start-Up Blanking Time
500
900
--
t
cs
CS Shutdown Propagation Delay
--
350
--
t
flt
CS to
FAULT
Pull-Up Propagation Delay
--
450
--
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
mA
V
V
ns
IR2122(S)
4
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Lead Definitions
Lead
Symbol
Description
V
CC
Logic and gate drive supply
Logic input for gate driver output (HO), out of phase with HO
Indicates over-current shutdown has occurred, negative logic
COM
Logic ground
V
B
High side floating supply
HO
High side gate drive output
V
S
High side floating supply return
CS
Current sense input to current sense comparator
Functional Block Diagram
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2122
IR2122S
FAULT
IN
IR2122(S)
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