Symbol
Parameter
Min.
Max.
Units
V
B
High Side Floating Supply Voltage
-0.3
V
S
+ 20
V
S
High Side Floating Supply Offset Voltage
-5
400
V
HO
High Side Floating Output Voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Logic Supply Voltage
-0.3
20
V
V
ERR
Error Signal Voltage
-0.3
V
CC
+ 0.3
V
CS
Current Sense Voltage
V
S
- 0.3
V
B
+ 0.3
V
IN
Logic Input Voltage
-0.3
V
CC
+ 0.3
dV
s
/dt
Allowable Offset Supply Voltage Transient
--
50
V/ns
P
D
Package Power Dissipation @ T
A
+25C
--
1.0
W
R
qJA
Thermal Resistance, Junction to Ambient
--
100
C/W
T
J
Junction Temperature
-55
125
T
S
Storage Temperature
-55
150
C
T
L
Lead Temperature (Soldering, 10 seconds)
--
300
Features
n
Floating channel designed for bootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 12 to 18V
n
Undervoltage lockout
n
Current detection and limiting loop to limit driven
power transistor current
n
Error lead indicates fault conditions and pro
grams shutdown time
n
Output in phase with input
Description
The IR2125Z is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry. Proprietary GVIC and latch immune
CMOS technologies enable ruggedized minilithic
consturction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. the ouput driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction.
PD - 60024C
IR2125Z
CURRENT LIMITING SINGLE CHANNEL DRIVER
Product Summary
VOFFSET
400V max.
IO+/-
1A / 2A
VOUT
12 - 18V
VCSth
230 mv
ton/off (typ.)
150 & 150 ns
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
The protection circuitry detects over-current in the driven
power transistor and limits the gate drive voltage. Cycle
by cycle shutdown is programmed by an external
capacitor which directly controls the time interval
between detection of the over-current limiting conditions
and latched shutdown. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 400 volts.
5/16/01
www.irf.com
1
IR2125Z
2
www.irf.com
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The VS offset ratings are tested with all supplies biased at
15V differential.
Symbol
Parameter
Min.
Max.
Units
VB
High Side Floating Supply Absolute Voltage
VS + 12
VS + 18
VS
High Side Floating Supply Offset Voltage
-5
400
VHO
High Side Floating Output Voltage
VS
VB
VCC
Low Side Fixed Supply Voltage
12
18
V
VIN
Logic Input Voltage
VSS
VCC
VERR
Error Signal Voltage
VSS
VCC
VCS
Current Sense Signal Voltage
VS
VB
Tj = 25C
Tj =
-55 to 125C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Max.
Units
Test Conditions
t
on
Turn-On Propagation Delay
--
150
200
--
270
t
off
Turn-Off Propagation Delay
--
150
300
--
330
t
r
Turn-On Rise Time
--
43
60
--
80
V
S
= 0V to 400V
t
f
Turn-Off Fall Time
--
26
35
--
50
CL = 3300pf
t
cs
CS to output shutdown propagation
--
0.7
1.2
--
1.4
delay
t
sd
Shutdown Propagation Delay
--
1.7
2.2
--
2.5
s
t
err
CS to ERR pull-up propagation time
--
9
22
--
25
V
S
= 0V TO 400V
C
err
= 270pf
n s
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, and CL = 3300 PF and Ta = 25C unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3 through 6.
Typical Connection
V
CC
V
B
CS
OUT
V
S
COM
IN
ERR
V
CC
IN
TO
LOAD
up to 400V
IR2125Z
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3
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and Ta = 25C unless otherwise specified. The VIN, VTH and IIN parameters are
referenced to COM . VO and IO parameters are referenced to VS.
Tj = 25C
Tj =
-55 to 125C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Max.
Units
Test Conditions
I
LK
Offset Supply Leakage Current
--
--
50
--
250
VB = VS = 400V
I
QBS
Quiescent V
BS
Supply Current
--
400
1000
--
1300
IN = CS = 0V, or 5V
I
QCC
Quiescent V
CC
Supply
Current
--
700
1200
--
1500
IN = CS = 0V, or 5V
I
IN
+
Logic "1" Input Bias Current
--
4
25
--
30
A
IN = 5V
I
IN
-
Logic "0" Input Bias Current
--
--
1.0
--
1.0
IN = 0V
I
CS
+
"High" CS Bias Current
--
6
15
--
30
CS = 3V
I
CS
-
"Low" CS Bias Current
--
--
1.0
--
1.0
CS = 0V
V
IH
Logic "1" Input Voltage
--
--
--
3.0
--
V
IL
Logic "0" Input Voltage
--
--
--
--
0.8
VCC = 10 TO 20V
V
ERR
+
Logic "1" ERR Input Voltage
--
--
--
2.2
--
V
V
ERR
-
Logic "0" ERR Input Voltage
--
--
--
--
0.8
V
CSTH
+
CS Input Positive Going Threshold
150
230
320
--
--
10V < VCC <
20V
V
CSTH
-
CS Input Positive Going Threshold
130
200
300
--
--
10V < VCC <
20V
V
BSUV
+
V
BS
Supply Overvoltage Positive
8.5
9.3
10
--
--
Going Threshold
V
BSUV
-
V
BS
Supply Undervoltage Negative
7.7
8.5
9.0
--
--
Going Threshold
V
BSOV
+
V
BS
Supply Overvoltage Positive
19.8
21.5
23
--
--
Going Threshold
V
BSOV
-
V
BS
Supply Undervoltage Negative
19.1
20.8
22.4
--
--
V
Going Threshold
V
CCUV
+
V
CC
Supply Overvoltage Positive
8.3
8.8
9.6
--
--
Going Threshold
V
CCUV
-
V
CC
Supply Undervoltage Negative
7.3
8.1
8.7
--
--
Going Threshold
V
CCOV
+
V
CC
Supply Overvoltage Positive
20
21.2
23
--
--
Going Threshold
V
CCOV
-
V
CC
Supply Undervoltage Negative
19.3
20.7
22.5
--
--
Going Threshold
I
ERR
ERR Timing Charge Current
40
100
130
--
--
A
IN = 5V, CS = 3V
ERR < VERR
+
I
ERR
+
ERR Pull-up Current
8.0
15
--
--
--
IN = 5V, CS = 3V
ERR > VERR
+
I
ERR
-
ERR Pull-down Current
16
30
--
--
--
IN = 0V
V
OH
High Level Output Voltage
VB-0.1
--
--
VB-0.1
--
IN = 5V, IO = 0A
V
OL
Low Level Output Voltage
--
--
VS+0.1
--
VS+0.1
IN = 0V, IO = 0A
R
on
,ON
Output High on Resistance
--
9
--
--
--
R
on
,OFF
Output Low on Resistance
--
3
--
--
--
mA
V
mV
IR2125Z
4
www.irf.com
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
"
Figure 3. Switching Time Waveform Definitions
Figure 4. ERR Shutdown Waveform Definitions
Figure 5. CS Shutdown Waveform Definitions
Figure 6. CS to ERR Waveform Definitions
dt
C
dV
I
C
1.8V
100 uA
ERR
=
=
ERR
CS
IN
HO
IN
t
r
t
on
t
f
t
off
HO
50%
50%
90%
90%
10%
10%
CS
t
cs
HO
50%
90%
CS
t
cs
OUT
50%
90%
CS
terr
ERR
50%
50%
1.8V
dt
HV = 10 to 400 V
< 50 V/ns
IR2125Z
www.irf.com
5
0.00
1.00
2.00
3.00
4.00
5.00
-50
-25
0
25
50
75
100
125
Temperature (C)
ERR to Output Shutdown Delay Time (s)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
Turn-Off Delay Time (ns)
Max.
Typ.
0
100
200
300
400
500
-50
-25
0
25
50
75
100
125
Temperature (C)
Turn-On Delay Time (ns)
Max.
Typ.
Figure 8A. Turn-Off Time vs. Temperature
Figure 8B. Turn-Off Time vs. Voltage
Figure 7A. Turn-On Time vs. Temperature
Figure 7B. Turn-On Time vs. Voltage
Figure 9B. ERR to Output Shutdown vs. Voltage
Figure 9A. ERR to Output Shutdown vs. Temperature
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-On Time (ns)
Max.
Typ.
0
100
200
300
400
500
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
Turn-Off Time (ns)
Max.
Typ.
0.00
1.00
2.00
3.00
4.00
5.00
10
12
14
16
18
20
V
BIAS
Supply Voltage (V)
ERR to Output Shutdown Delay Time (s)
Max.
Typ.
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