Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25C
Continuous Drain Current
1 4
ID @ VGS = 10V, TC = 100C
Continuous Drain Current
9.0
IDM
Pulsed Drain Current
5 6
PD @ TC = 25C
Max. Power Dissipation
15 0
W
Linear Derating Factor
1.2
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
11.3
mJ
IAR
Avalanche Current
1 4
A
EAR
Repetitive Avalanche Energy
1 5
mJ
dv/dt
Peak Diode Recovery dv/dt
4.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5 (typical)
g
PD - 90339F
o
C
A
01/22/01
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1
Product Summary
Part Number B
VDSS
R
DS(on)
I
D
IRF350 400V 0.300
14A
For footnotes refer to the last page
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6768
HEXFET
TRANSISTORS
JANTXV2N6768
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/543]
IRF350
400V, N-CHANNEL
The HEXFET
technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Rating
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
IRF350
2
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Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
--
--
0.83
RthJA
Junction to Ambient
--
--
3 0 Typical socket mount
C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
1 4
ISM
Pulse Source Current (Body Diode)
--
--
5 6
VSD
Diode Forward Voltage
--
--
1.7
V
T
j
= 25C, IS =14A, VGS = 0V
trr
Reverse Recovery Time
--
--
1200
nS
Tj = 25C, IF =14A, di/dt
100A/
s
QRR
Reverse Recovery Charge
--
--
2 5 0
c
VDD
50V
t o n
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
4 00
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ
Temperature Coefficient of Breakdown
--
0.46
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
-- 0.300 VGS = 10V, ID =9.0A
Resistance
--
-- 0.400
VGS =10V, ID =14A
VGS(th)
Gate Threshold Voltage
2.0
-- 4.0 V VDS = VGS, ID =250A
gfs
Forward Transconductance
6.0
--
--
S (
)
VDS > 15V, IDS =9.0A
IDSS
Zero Gate Voltage Drain Current
--
--
2 5
VDS=320V, VGS=0V
--
--
2 5 0
VDS =320V
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS =20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS =-20V
Qg
Total Gate Charge
5 2
--
1 1 0
VGS =10V, ID=14A
Qgs
Gate-to-Source Charge
5.0
--
1 8
nC
VDS =200V
Qgd
Gate-to-Drain (`Miller') Charge
2 5
--
6 5
td
(on)
Turn-On Delay Time
--
--
3 5
VDD =200V, ID =14A,
t r
Rise Time
--
--
1 9 0
RG =2.35
td
(off)
Turn-Off Delay Time
--
--
170
tf
Fall Time
--
--
130
LS + LD
Total Inductance
--
6.1
--
Ciss
Input Capacitance
--
2600
VGS = 0V, VDS =25V
Coss
Output Capacitance
--
680
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
250
--
nA
nH
n s
A
Measured from the center of
drain pad to center of source
p a d
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3
IRF350
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF350
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
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5
IRF350
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF350
6
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D S S
I
A S
R G
IA S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0V
10V
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7
IRF350
Foot Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
ISD
14A, di/dt
145A/
s,
VDD
400V, TJ
150C
Suggested RG =2.35
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD =50V, starting TJ = 25C,
Peak IL = 14A,
Pulse width
300
s; Duty Cycle
2%
Case Outline and Dimensions --TO-204AA (Modified TO-3)
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