V
DSS
= -30V
R
DS(on)
= 0.27
HEXFET
Power MOSFET
PD - 9.1268F
MICRO8
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
D1
D1
D2
D2
G 1
S 2
G 2
S 1
T o p V iew
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-1.7
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-1.4
A
I
DM
Pulsed Drain Current
-9.6
P
D
@T
A
= 25C
Power Dissipation
1.25
W
Linear Derating Factor
10
mW/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
8/25/97
Description
IRF7506
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
100
C/W
IRF7506
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-30
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.039
V/C
Reference to 25C, I
D
= -1mA
0.27
V
GS
= -10V, I
D
= -1.2A
0.45
V
GS
= -4.5V, I
D
= -0.60A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
0.92
S
V
DS
= -10V, I
D
= -0.60A
-1.0
V
DS
= -24V, V
GS
= 0V
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
7.5
11
I
D
= -1.2A
Q
gs
Gate-to-Source Charge
1.3
1.9
nC
V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge
2.5
3.7
V
GS
= -10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time
9.7
V
DD
= -15V
t
r
Rise Time
12
I
D
= -1.2A
t
d(off)
Turn-Off Delay Time
19
R
G
= 6.2
t
f
Fall Time
9.3
R
D
= 12
,
See Fig. 10
C
iss
Input Capacitance
180
V
GS
= 0V
C
oss
Output Capacitance
87
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
42
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating pulse width limited by max. junction temperature (see fig. 11)
I
SD
-1.2A, di/dt
-140A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
300s duty cycle
2%
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -1.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
30
45
ns
T
J
= 25C, I
F
= -1.2A
Q
rr
Reverse RecoveryCharge
37
55
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-9.6
-1.25
S
D
G
Surface mounted on FR-4 board, t
10sec.
IRF7506
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0 . 1
1
1 0
0 . 1
1
1 0
D
D S
20 s P U LSE W I DTH
T = 25 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
J
-3.0 V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
0 . 1
1
1 0
0 . 1
1
1 0
D
D S
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
r
c
e
C
u
rr
e
n
t
(
A
)
-V , D ra in-to-S ou rce V o lta ge (V )
-3. 0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
20 s P U LSE W I DTH
T = 15 0C
J
0 . 1
1
1 0
3 . 0
4 . 0
5 . 0
6 . 0
7 . 0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o ltag e (V )
V = -1 0 V
2 0 s P U L S E W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , Ju nctio n T emp eratu re (C)
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
o
r
m
a
l
i
z
ed)
A
V = -10 V
G S
I = -1. 2A
D
IRF7506
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
1 2
1 6
2 0
0
2
4
6
8
1 0
1 2
G
GS
A
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Tota l Gate Ch arge (n C)
V = -24 V
V = -15 V
DS
DS
I = -1.2 A
D
FO R TEST C IR C U IT
SEE F IGU R E 9
0 . 1
1
1 0
1 0 0
1
1 0
1 0 0
OPE R ATIO N IN TH IS A RE A LI MI TE D
BY R
D S(o n)
T = 25 C
T = 15 0C
S ing le Pulse
A
-I
,
D
r
a
i
n
C
u
rre
n
t
(A
)
-V , D rain-to-S ource Volta ge (V )
D S
D
A
J
1 ms
10m s
10 0s
10 s
0
1 0 0
2 0 0
3 0 0
4 0 0
1
1 0
1 0 0
C
,
C
a
pac
i
t
anc
e (
p
F
)
A
D S
-V , Drain -to -So urce V oltag e (V)
V = 0V , f = 1MH z
C = C + C , C SH OR TED
C = C
C = C + C
G S
is s gs g d ds
rs s g d
os s ds gd
C
is s
C
o s s
C
rs s
0 . 1
1
1 0
0 . 4
0 . 6
0 . 8
1 . 0
1 . 2
1 . 4
T = 25 C
T = 1 50 C
J
J
V = 0 V
G S
S D
SD
A
-
I
,
R
e
v
e
r
s
e D
r
ai
n
C
u
r
r
ent
(
A
)
-V , S ou rce -to -Drain V olta ge (V )
IRF7506
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
V
DS
-10V
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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