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1
09/23/02
IRFR3518
IRFU3518
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max
I
D
80V
29m
W
30A
Parameter
Max.
Units
V
DS
Drain-to-Source Voltage
80
V
V
GS
Gate-to-Source Voltage
20
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
38
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
27
A
I
DM
Pulsed Drain Current
150
P
D
@T
C
= 25C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/C
dv/dt
Peak Diode Recovery dv/dt
5.2
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Notes
through
are on page 10
PD - 94523
Applications
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3518
I-Pak
IRFU3518
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.4
R
JA
Junction-to-Ambient (PCB mount)
40
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
2
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IRFR3518/IRFU3518
Dynamic @ T
J
= 25C (unless otherwise specified)
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
80
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.09 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
24
29
m
V
GS
= 10V, I
D
= 18A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
20
A
V
DS
= 80V, V
GS
= 0V
250
V
DS
= 64V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
200
V
GS
= 20V
Gate-to-Source Reverse Leakage
-200
nA
V
GS
= -20V
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
34
S
V
DS
= 25V, I
D
= 18A
Q
g
Total Gate Charge
37 56 I
D
= 18A
Q
gs
Gate-to-Source Charge
11
nC
V
DS
= 40V
Q
gd
Gate-to-Drain ("Miller") Charge
12
V
GS
= 10V
t
d(on)
Turn-On Delay Time
12
V
DD
= 40V
t
r
Rise Time
25
I
D
= 18A
t
d(off)
Turn-Off Delay Time
37
R
G
= 9.1
t
f
Fall Time
13
V
GS
= 10V
C
iss
Input Capacitance
1710
V
GS
= 0V
C
oss
Output Capacitance
270
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
33
pF
= 1.0MHz
C
oss
Output Capacitance
1780
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
170
V
GS
= 0V, V
DS
= 64V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
330
V
GS
= 0V, V
DS
= 0V to 64V
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
160
mJ
I
AR
Avalanche Current
18
A
E
AR
Repetitive Avalanche Energy
11
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time
77
ns
T
J
= 25C, I
F
= 18A
Q
rr
Reverse RecoveryCharge
210
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
38
150
A
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IRFR3518/IRFU3518
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25
C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D
4.5V
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175
C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
DS
D
4.5V
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 175C
VDS = 25V
20s PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
R
, D
r
a
i
n
-
to
-
S
o
u
r
ce
O
n
R
e
si
sta
n
c
e
(
N
or
m
a
l
i
z
ed)
D
S
(
on)
V
=
I
=
GS
D
10V
38A
Tj, Junction Temperature (C)
4
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IRFR3518/IRFU3518
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 40V
VDS= 64V
VDS= 16V
ID= 18A
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I
,
R
e
v
e
rs
e D
r
ai
n C
u
rrent
(A)
SD
SD
V = 0 V
GS
T = 175 C
J
T = 25 C
J
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 175C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
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IRFR3518/IRFU3518
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
Res
pons
e
(
Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
10
20
30
40
T , Case Temperature
( C)
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
C
D
LIMITED BY PACKAGE
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