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IRFZ34VSPbF
IRFZ34VLPbF
HEXFET
Power MOSFET
07/15/04
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
30
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
21
A
I
DM
Pulsed Drain Current
120
P
D
@T
C
= 25C
Power Dissipation
70
W
Linear Derating Factor
0.46
W/C
V
GS
Gate-to-Source Voltage
20
V
I
AR
Avalanche Current
30
A
E
AR
Repetitive Avalanche Energy
7.0
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
www.irf.com
1
V
DSS
= 60V
R
DS(on)
= 28m
I
D
= 30A
S
D
G
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
l
Lead-Free
Description
D
2
Pak
IRFZ34VS
TO-262
IRFZ34VL
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
2.15
R
JA
Junction-to-Ambient (PCB Mounted)**
40
C/W
Thermal Resistance
PD - 95560
IRFZ34VS/LPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 30A, V
GS
= 0V
t
rr
Reverse Recovery Time
70
110
ns
T
J
= 25C, I
F
= 30A
Q
rr
Reverse Recovery Charge
99
150
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
30
120
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25C, L = 180H
R
G
= 25
, I
AS
= 30A. (See Figure 12)
I
SD
30A
,
di/d
t
250A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Pulse width
400s; duty cycle
2%.
Uses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.062
V/C
Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
28
m
V
GS
= 10V, I
D
= 18A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
15
S
V
DS
= 25V, I
D
= 18A
25
A
V
DS
= 60V, V
GS
= 0V
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
Q
g
Total Gate Charge
49
I
D
= 30A
Q
gs
Gate-to-Source Charge
12
nC
V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge
18
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
10
V
DD
= 30V
t
r
Rise Time
65
I
D
= 30A
t
d(off)
Turn-Off Delay Time
31
R
G
= 12
t
f
Fall Time
40
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance
1120
V
GS
= 0V
C
oss
Output Capacitance
250
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
59
pF
= 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy
260
81
mJ
nH
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRFZ34VS/LPbF
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
r
ain-to-Source C
u
rrent (A)
DS
D
4.5V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4
5
6
7
8
9
10
11
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
r
ain-to-Source C
u
rrent (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
10V
30A
IRFZ34VS/LPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Vol
t
age (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
30A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFZ34VS/LPbF
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T , Case Temperature
( C)
I , Drain Current (A)
C
D
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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