IRFZ46N

HEXFET

Power MOSFET

01/24/01

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

1.4

Case-to-Sink, Flat, Greased Surface

0.50

°C/W

Junction-to-Ambient

Thermal Resistance

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DSS

= 55V

DS(on)

= 16.5m

= 53A

TO-220AB

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Description

PD-91277

Parameter

Max.

Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

180

= 25°C

Power Dissipation

107

Linear Derating Factor

0.71

W/°C

Gate-to-Source Voltage

± 20

Avalanche Current

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf·in (1.1N·m)

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Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

Diode Forward Voltage

1.3

= 25°C, I

= 28A, V

= 0V

Reverse Recovery Time

101

= 25°C, I

= 28A

Reverse Recovery Charge

208

312

di/dt = 100A/µs

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L

)

Source-Drain Ratings and Characteristics

180

Starting T

= 25°C, L = 389

= 25

, I

= 28A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

28A, di/dt

220A/µs, V

(BR)DSS

175°C

Pulse width

400µs; duty cycle

2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to T

= 175°C.

Parameter

Min. Typ. Max. Units

Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage

= 0V, I

= 250µA

(BR)DSS

Breakdown Voltage Temp. Coefficient

0.057

V/°C

Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance

16.5

= 10V, I

= 28A

GS(th)

Gate Threshold Voltage

2.0

4.0

= V

, I

= 250µA

Forward Transconductance

= 25V, I

= 28A

µA

= 55V, V

= 0V

250

= 44V, V

= 0V, T

= 150°C

Gate-to-Source Forward Leakage

100

= 20V

Gate-to-Source Reverse Leakage

-100

= -20V

Total Gate Charge

= 28A

Gate-to-Source Charge

= 44V

Gate-to-Drain ("Miller") Charge

= 10V, See Fig. 6 and 13

d(on)

Turn-On Delay Time

= 28V

Rise Time

= 28A

d(off)

Turn-Off Delay Time

= 12

Fall Time

= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

iss

Input Capacitance

1696

= 0V

oss

Output Capacitance

407

= 25V

rss

Reverse Transfer Capacitance

110

= 1.0MHz, See Fig. 5

Single Pulse Avalanche Energy

583

152

= 28A, L = 389

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Internal Drain Inductance

Internal Source Inductance

GSS

4.5

7.5

DSS

Drain-to-Source Leakage Current

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1

100

20µs PULSE WIDTH
T = 175 C

TOP

BOTTOM

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

V = 25V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 175 C

-60 -40 -20

20 40

60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

53A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

28A

= 11V

= 27V

= 44V

0.1

100

1000

0.2

0.7

1.2

1.7

2.2

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 175 C

100

500

1000

1500

2000

2500

3000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Ciss

Coss

Crss

100

VDS , Drain-toSource Voltage (V)

0.1

100

1000

I D

, Drain-to-Source Current (A)

Tc = 25°C
Tj = 175°C
Single Pulse

1msec

10msec

OPERATION IN THIS AREA
LIMITED BY R DS (on)

100µsec

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

Notes:

1. Duty factor D = t / t
2. Peak T = P

x Z

+ T

thJC

t , Rectangular Pulse Duration (sec)

Thermal Response

(Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

100

125

150

175

T , Case Temperature ( C)

I , Drain Current (A)

90%

10%
V

d(on)

d(off)

Pulse Width

µs

Duty Factor

0.1 %

D.U.T.

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

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