Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25C Continuous Drain Current
-11
ID @ VGS = -12V, TC = 100C Continuous Drain Current
-7.0
IDM
Pulsed Drain Current
-44
PD @ TC = 25C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
190
mJ
IAR
Avalanche Current
-11
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-10
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
g
Pre-Irradiation
International Rectifier's RADHard HEXFET
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA)
02/18/03
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRH9130 100K Rads (Si)
0.3
-11A
IRH93130 300K Rads (Si)
0.3
-11A
For footnotes refer to the last page
I R H 9 1 3 0
100V, P-CHANNEL
RAD Hard
TM
HEXFET
TECHNOLOGY
TO-204AA
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
PD - 90880C
2
www.irf.com
IRH9130
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-11
ISM
Pulse Source Current (Body Diode)
--
--
-44
VSD
Diode Forward Voltage
--
--
-3.0
V
T
j
= 25C, IS = -11A, VGS = 0V
trr
Reverse Recovery Time
--
--
250
nS
Tj = 25C, IF = -11A, di/dt
-100A/
s
QRR Reverse Recovery Charge
--
--
0.84
C
VDD
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.67
RthJA
Junction-to-Ambient
--
--
30
C/W
Typical socket mount
RthCS
Case-to-Sink
--
0.12
--
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
-0.1
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.3
VGS = -12V, ID = -7.0A
Resistance
--
--
0.325
VGS = -12V, ID = -11A
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
2.5
--
--
S (
)
VDS > -15V, IDS = -7.0A
IDSS
Zero Gate Voltage Drain Current
--
--
-25
VDS= -80V ,VGS=0V
--
--
-250
VDS = -80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
--
--
45
VGS =-12V, ID = -11A
Qgs
Gate-to-Source Charge
--
--
10
nC
VDS = -50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
25
td
(on)
Turn-On Delay Time
--
--
30
VDD =-50V, ID = -11A
tr
Rise Time
--
--
50
VGS =-12V, RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
70
tf
Fall Time
--
--
70
LS + LD
Total Inductance
--
10
--
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in.
from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
--
1200
--
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
300
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
74
--
nA
nH
ns
A
www.irf.com
3
Pre-Irradiation
IRH9130
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 -- -100 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -25 -- -25 A V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.3 -- 0.3
V
GS
= -12V, I
D
=-7A
On-State Resistance
V
SD
Diode Forward Voltage
-- -3.0 -- -3.0 V
V
GS
= 0V, IS = -11A
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
VGS
VDS
Cu
Br
I
n
o
I
T
E
L
)
)
m
c
/
g
m
(
/
V
e
M
y
g
r
e
n
E
)
V
e
M
(
e
g
n
a
R
)
m
(
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
1
-
0
0
1
-
0
0
1
-
0
7
-
0
6
-
r
B
8
.
6
3
5
0
3
9
3
0
0
1
-
0
0
1
-
0
7
-
0
5
-
0
4
-
I
9
.
9
5
5
4
3
8
.
2
3
0
6
-
--
--
--
--
4
www.irf.com
IRH9130
Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
5
6
7
8
9
10
11
12
13
V = -50V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-12V
-11A
www.irf.com
5
Pre-Irradiation
IRH9130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Crss
Coss
Ciss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-11A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
PDF 
ZIP