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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25C Continuous Drain Current
-45*
ID @ VGS = -12V, TC = 100C Continuous Drain Current
-30
IDM
Pulsed Drain Current
-180
PD @ TC = 25C
Max. Power Dissipation
208
W
Linear Derating Factor
1.67
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
480
mJ
IAR
Avalanche Current
-45
A
EAR
Repetitive Avalanche Energy
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
-6.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pack. Mounting Surface Temp.
300 (for 5s)
Weight
3.7 (Typical)
g
Pre-Irradiation
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
12/24/04
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1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMK597160 100K Rads (Si) 0.05
-45A*
IRHMK593160 300K Rads (Si) 0.05
-45A*
For footnotes refer to the last page
* Current is limited by package
Low-Ohmic
TO-254AA Tabless
RADIATION HARDENED IRHMK597160
POWER MOSFET 100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
TECHNOLOGY
5
5
Features:
n
Low R
DS(on)
n
Fast Switching
n
Single Event Effect (SEE) Hardened
n
Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Electrically Isolated
n
Light Weight
PD-96912
IRHMK597160
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-45*
ISM
Pulse Source Current (Body Diode)
--
--
-180
VSD Diode Forward Voltage
--
--
-5.0
V
T
j
= 25C, IS = -45A, VGS = 0V
trr
Reverse Recovery Time
--
--
200
ns
Tj = 25C, IF =-45A, di/dt -100A/s
QRR Reverse Recovery Charge
--
--
1.6
C
VDD -25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown --
-0.13
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.05
VGS = -12V, ID = -30A
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
24
--
--
S (
)
VDS > -15V, IDS = -30A
IDSS
Zero Gate Voltage Drain Current
--
--
-10 VDS= -80V ,VGS=0V
--
--
-25
VDS = -80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100 VGS = 20V
Qg
Total Gate Charge
--
--
170 VGS =-12V, ID = -45A
Qgs
Gate-to-Source Charge
--
--
65
nC
VDS = -50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
30
td
(on)
Turn-On Delay Time
--
--
35 VDD = -50V, ID = -45A
tr
Rise Time
--
--
140
VGS =-12V, RG = 1.2
td
(off)
Turn-Off Delay Time
--
--
70
tf
Fall Time
--
--
45
LS + LD
Total Inductance
--
6.8
--
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
--
6110
-- VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
1574
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
115
--
nA
nH
ns
A
* Current is limited by package
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.6
RthCS
Case-to-Sink
-- 0.21
--
C/W
RthJA
Junction-to-Ambient
--
--
48
Typical socket mount
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3
Pre-Irradiation
IRHMK597160
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300KRads(Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 -- -100 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
= -20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -10 -- -10 A V
DS
= -80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.05 -- 0.05
V
GS
= -12V, I
D
= -30A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source On-State
-- 0.05 -- 0.05
V
GS
= -12V, I
D
= -30A
Resistance(Low-OhmicTO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHMK597160
2. Part number IRHMK593160
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
-- -5.0 -- -5.0 V V
GS
= 0V, IS = -45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
V
DS
(V)
(MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=5V @V
GS
=10V @V
GS
=15V @V
GS
=17.5V
Br
37.9
252.6 33.1 -100 -100 -100 -100 -100
I
59.7
314 30.5 -100 -100 -100 -100 -75
Au
82.3
350 28.4 -100 -100 -100
-30 --
-100
-25
--
@V
GS
=20V
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
25
VGS
VD
S
Br
I
Au
IRHMK597160
Pre-Irradiation
4
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-5.0V
10
100
1000
5.0
5.5
6.0
6.5
7.0
V = -50V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drai
n-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R
, D
r
ain-to-S
ource O
n
R
e
sistance
(Norm
a
l
i
z
ed)
J
D
S
(on)
V
=
I =
GS
D
-12V
-45A
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5
Pre-Irradiation
IRHMK597160
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
C
iss
C
oss
C
rss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V ,
G
a
t
e
-t
o-Source Vol
t
age (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-45A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
1000
0.0
1.5
3.0
4.5
6.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
1
10
100
1000
-
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100s
1ms
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