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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

45*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

45*

IDM

Pulsed Drain Current

180

PD @ TC = 25°C

Max. Power Dissipation

208

Linear Derating Factor

1.67

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

493

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

20.8

dv/dt

Peak Diode Recovery dv/dt

6.7

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Lead Temperature

300 (0.063 in. /1.6 mm from case for 10s)

Weight

9.3 (Typical)

11/01/04

www.irf.com

* Current is limited by package
For footnotes refer to the last page

Pre-Irradiation

TO-254AA

Low-Ohmic

Features:

Low R

DS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

International Rectifier's R5

technology provides

high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low

RDS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.

IRHMS57160

RADIATION HARDENED JANSR2N7471T1
POWER MOSFET 100V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/698

TECHNOLOGY

5
5

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHMS57160 100K Rads (Si) 0.013

45A* JANSR2N7471T1

IRHMS53160 300K Rads (Si) 0.013

45A* JANSF2N7471T1

IRHMS54160 600K Rads (Si) 0.013

45A* JANSG2N7471T1

IRHMS58160 1000K Rads (Si) 0.013

45A* JANSH2N7471T1

PD-95889

IRHMS57160, JANSR2N7471T1

Pre-Irradiation

www.irf.com

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

45*

ISM

Pulse Source Current (Body Diode)

180

VSD Diode Forward Voltage

1.2

= 25°C, IS = 45A, VGS = 0V Ã

trr

Reverse Recovery Time

270

Tj = 25°C, IF = 45A, di/dt 100A/µs

QRR Reverse Recovery Charge

2.7

µC

VDD 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

For footnotes refer to the last page

* Current is limited by package

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

0.60

RthCS

Case-to-Sink

-- 0.21

°C/W

RthJA

Junction-to-Ambient

Typical socket mount

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/TJ Temperature Coefficient of Breakdown --

0.11

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.013

VGS = 12V, ID = 45A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS = 15V, IDS = 45A Ã

IDSS

Zero Gate Voltage Drain Current

VDS = 80V ,VGS = 0V

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

160

VGS =12V, ID = 45A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 45A

Rise Time

125

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

6.8

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

6270

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1620

f = 100KHz

Crss

Reverse Transfer Capacitance

Internal Gate Resistance

1.0

f = 1.0MHz, open drain

µA

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

www.irf.com

Pre-Irradiation

IRHMS57160, JANSR2N7471T1

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Up to 600K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 100 -- 100 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 25 -- 25 µA V

= 80V, V

= 0V

DS(on)

Static Drain-to-Source

0.013

0.014

=12V, I

= 45A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source On-State

-- 0.013 -- 0.014

= 12V, I

= 45A

Resistance (Low-Ohmic TO-254)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHMS57160 ( JANSR2N7471T1 ), IRHMS53160 ( JANSF2N7471T1 ) and IRHMS54160 ( JANSG2N7471T1 )
2. Part number IRHMS58160 ( JANSH2N7471T1 )

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V

= 0V, IS = 45A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 100 100 100 100 100

59.8

341 32.5 100 100 100 35 25

82.3

350 28.4 100 100 80

100

120

-20

-15

-10

-5

VGS

VDS

Br
I
Au

IRHMS57160, JANSR2N7471T1

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

VDS, Drain-to-Source Voltage (V)

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V
12V
10V
9.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V

5.0V

-60 -40 -20 0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

(
o
n
)
,

r
a
i
n
-
t
o
-
S

o
u
r
c
e

O

n

R

e
s
i
s
t
a
n
c
e

(
N

o
r
m

a
l
i
z
e
d
)

VGS = 12V

ID = 45A

0.1

100

VDS , Drain-to-Source Voltage (V)

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V
12V
10V
9.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V

5.0V

5.5

6.5

VGS, Gate-to-Source Voltage (V)

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

VDS = 50V
6

0µs PULSE WIDTH

TJ = 150°C

TJ = 25°C

www.irf.com

Pre-Irradiation

IRHMS57160, JANSR2N7471T1

100KHz

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

VDS, Drain-to-Source Voltage (V)

2000

4000

6000

8000

10000

12000

,

C

a
p
a
c
i
t
a
n
c
e

(
p
F

)

VGS = 0V, f = 1 MHz

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd
Coss = Cds + Cgd

Coss

Crss

Ciss

120

160

200

QG, Total Gate Charge (nC)

,

G

a
t
e
-
t
o
-
S

o
u
r
c
e

V

o
l
t
a
g
e

(
V

)

VDS = 80V

VDS = 50V

VDS = 20V

ID = 45A

FOR TEST CIRCUIT

SEE FIGURE 13

100

1000

VDS , Drain-to-Source Voltage (V)

100

1000

I D

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

Tc = 25°C

Tj = 150°C

Single Pulse

1ms

10ms

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µs

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD , Source-to-Drain Voltage (V)

1.0

100

1000

I S

e
v
e
r
s
e

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

VGS = 0V

TJ = 150°C

TJ = 25°C

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