Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
45*
ID @ VGS = 12V, TC = 100C Continuous Drain Current
45*
IDM
Pulsed Drain Current
180
PD @ TC = 25C
Max. Power Dissipation
208
W
Linear Derating Factor
1.67
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
1250
mJ
IAR
Avalanche Current
45
A
EAR
Repetitive Avalanche Energy
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
1.08
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
Weight
9.3 (Typical)
g
o
C
A
04/25/06
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1
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
TO-254AA
Low-Ohmic
Features:
n
Low R
DS(on)
n
Fast Switching
n
Single Event Effect (SEE) Hardened
n
Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Eyelets
n
Electrically Isolated
n
Light Weight
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
IRHMS57Z60
RADIATION HARDENED JANSR2N7478T1
POWER MOSFET 30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
REF: MIL-PRF-19500/697
TECHNOLOGY
5
5
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.0045
45A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.0045
45A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.0045
45A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.0045
45A*
JANSH2N7478T1
PD-96961A
IRHMS57Z60, JANSR2N7478T1
Pre-Irradiation
2
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Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
45*
ISM
Pulse Source Current (Body Diode)
--
--
180
VSD
Diode Forward Voltage
--
--
1.2
V
T
j
= 25C, IS = 45A, VGS = 0V
trr
Reverse Recovery Time
--
--
140
ns
Tj = 25C, IF = 45A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
350
nC
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.60
RthCS
Case-to-Sink
--
0.21
--
C/W
RthJA
Junction-to-Ambient
--
--
48
Typical socket mount
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.03
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.0045
VGS = 12V, ID = 45A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
73
--
--
S (
)
VDS = 15V, IDS = 45A
IDSS
Zero Gate Voltage Drain Current
--
--
10
VDS = 24V ,VGS = 0V
--
--
25
VDS = 24V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
240
VGS =12V, ID = 45A
Qgs
Gate-to-Source Charge
--
--
60
nC
VDS = 15V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
55
td
(on)
Turn-On Delay Time
--
--
35
VDD = 15V, ID = 45A
tr
Rise Time
--
--
175
VGS =12V, RG = 2.35
td
(off)
Turn-Off Delay Time
--
--
80
tf
Fall Time
--
--
40
LS + LD
Total Inductance
--
6.8
--
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
--
8884
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
4334
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
270
--
Rg
Internal Gate Resistance
--
0.73
--
f = 1.0MHz, open drain
nA
nH
ns
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
www.irf.com
3
Pre-Irradiation
IRHMS57Z60, JANSR2N7478T1
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 -- 30 -- V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- 100 -- 100 nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
-- -100 -- -100
V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current
-- 10 -- 25 A V
DS
= 24V, V
GS
= 0V
R
DS(on)
Static Drain-to-Source
--
0.0040
--
0.0045
V
GS
=12V, I
D
= 45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source On-State
-- 0.0045 -- 0.0050
V
GS
=12V, I
D
= 45A
Resistance (Low-Ohmic TO-254)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHMS57Z60 (JANSR2N7478T1), IRHMS53Z60 (JANSF2N7478T1) and IRHMS54Z60 (JANSG2N7478T1)
2. Part number IRHMS58Z60 (JANSH2N7478T1)
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
-- 1.2 -- 1.2 V
V
GS
= 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
V
DS
(V)
(MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28
261 40 30 30 30 25 15
Br
37
285 37 30 30 30 23 15
I
60
344 33 25 25 20
15
8
0
5
10
15
20
25
30
35
-20
-15
-10
-5
0
VGS
VDS
Cu
Br
I
IRHMS57Z60, JANSR2N7478T1
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60
s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
4.0V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60
s PULSE WIDTH
Tj = 25C
VGS
TOP 15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
4.0V
4
4.5
5
5.5
6
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VDS = 15V
6
0
s PULSE WIDTH
TJ = 150C
TJ = 25C
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (C)
0.0
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
VGS = 12V
ID = 45A
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5
Pre-Irradiation
IRHMS57Z60, JANSR2N7478T1
100KHz
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.0
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
VGS = 0V
TJ = 150C
TJ = 25C
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
16000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
40
80
120 160 200 240 280 320
QG, Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS = 24V
VDS = 15V
ID = 45A
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
VDS , Drain-to-Source Voltage (V)
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100s
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