Product Summary

Part Number

DSS

DS(on)

IRHN7250

200V

0.10

26A

IRHN8250

200V

0.10

26A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light-weight

N-CHANNEL

MEGA RAD HARD

Provisional Data Sheet PD 9.679C

200 Volt, 0.10

, MEGA RAD HARD HEXFET

International Rectifier's MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage sta-
bility at total radiation doses as high as 1 x 10

Rads

(Si). Under identical pre- and post-radiation test con-
ditions, International Rectifier's RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10

Rads (Si) total dose. At 1 x 10

Rads (Si) total dose,

under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive cir-
cuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x
10

Rads (Si)/Sec, and return to normal operation within

a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has dem-
onstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier's patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space
and weapons environments.

IRHN7250
IRHN8250

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

F-347

Absolute Maximum Ratings

Parameter

IRHN7250, IRHN8250

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

104

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 sec.)

Weight

2.6 (typical)

Pre-Radiation

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IRHN7250/IRHN8250 Devices

F-348

Pre-Radiation

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

0.83

K/W

RthJPCB

Junction-to-PC board

TBD

soldered to a copper-clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

104

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

1.9

= 25°C, IS = 26A, VGS = 0V

t rr

Reverse Recovery Time

820

Tj = 25°C, IF = 26A, di/dt

100A/

QRR

Reverse Recovery Charge

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

VGS = 0V, ID = 1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.28

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.10

VGS = 12V, ID = 16A

On-State Resistance

0.11

VGS = 12V, ID = 26A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0 mA

gfs

Forward Transconductance

8.0

S (

)

VDS > 15V, IDS = 16A

IDSS

Zero Gate Voltage Drain Current

VDS = 0.8 x Max Rating,VGS = 0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

170

VGS =12V, ID = 26A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

td(on)

Turn-On Delay Time

VDD = 100V, ID = 26A,

Rise Time

140

RG = 2.35

td(off)

Turn-Off Delay Time

140

Fall Time

140

Internal Drain Inductance

2.0

Internal Source Inductance

4.1

Ciss

Input Capacitance

4700

VGS = 0V, VDS = 25V

Coss

Output Capacitance

850

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

210

(see figure 22)

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

(see figure 22)

(see figures 23 and 31)

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IRHN7250/IRHN8250 Devices

F-349

Radiation Performance of Mega Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The
hardness assurance program at International Recti-
fier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V

DSS

bias condition equal to 80%

of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra-
diated to 1 x 10

Rads (Si) are identical and are pre-

sented in Table 1, column 1, IRHN7250. Device
performance limits at a post radiation level of 1 x
10

Rads (Si) are presented in Table 1, column 2,

IRHN8250. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re-
sponse appear in figures 1 through 5. Typical post-
radiation curves appear in figures 10 through 17.

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10

Rads (Si),

leakage remains low and the device is usable with
no change in drive circuitry required.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

Rads

(Si)/Sec. Photocurrent and transient voltage wave-
forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef-
fects on bulk silicon of the type used by Interna-
tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.

Table 2. High Dose Rate

Rads (Si)/sec 10

Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

160

Applied drain-to-source voltage
during gamma-dot

IPP

Peak radiation induced photo-current

di/dt

160

8.0 A/µsec Rate of rise of photo-current

1.0

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ions/cm

)

(

(V)

BVDSS

200

1 x 10

~41

160

-5

Table 1. Low Dose Rate

IRHN7250

IRHN8250

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

min.

max.

min.

max.

DSS

Drain-to-Source Breakdown Voltage

200

= 0V, I

= 1.0 mA

GS(th)

Gate Threshold Voltage

2.0

4.0

1.25

4.5

= V

, I

= 1.0 mA

GSS

Gate-to-Source Leakage Forward

100

= +20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

= 0.8 x Max Rating, V

= 0

DS(on)1

Static Drain-to-Source

0.10

0.150

= 12V, I

= 16A

On-State Resistance One

Diode Forward Voltage

1.9

TC = 25°C, IS = 26A,V

= 0V

Post-Radiation Characteristics

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