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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

75*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

300

PD @ TC = 25°C

Max. Power Dissipation

250

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

363

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

6.0

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range
Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

3.3 (Typical)

Pre-Irradiation

International Rectifier's R5

technology provides

high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.

RADIATION HARDENED JANSR2N7469U2
POWER MOSFET 100V, N-CHANNEL
SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/673

06/09/04

www.irf.com

* Current is limited by package

SMD-2

Product Summary

Part Number Radiation Level R

DS(on)

QPL Part Number

IRHNA57160 100K Rads (Si) 0.012

75*A JANSR2N7469U2

IRHNA53160 300K Rads (Si) 0.012

75*A JANSF2N7469U2

IRHNA54160 600K Rads (Si) 0.012

75*A JANSG2N7469U2

IRHNA58160 1000K Rads (Si) 0.013

75*A JANSH2N7469U2

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

For footnotes refer to the last page

5
5

IRHNA57160

TECHNOLOGY

PD - 91860H

IRHNA57160, JANSR2N7469U2

Pre-Irradiation

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

0.5

RthJ-PCB

Junction-to-PC board

1.6

soldered to a 2 square copper-clad board

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

75*

ISM

Pulse Source Current (Body Diode)

300

VSD Diode Forward Voltage

1.2

= 25°C, IS = 75A, VGS = 0V Ã

trr

Reverse Recovery Time

300

Tj = 25°C, IF = 45A, di/dt 100A/µs

QRR Reverse Recovery Charge

2.2

µC

VDD 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

* Current is limited by package

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0mA

BVDSS/TJ Temperature Coefficient of Breakdown

0.115

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.012

VGS = 12V, ID = 69A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS

15V, IDS = 69A Ã

IDSS

Zero Gate Voltage Drain Current

VDS= 80V ,VGS=0V

VDS = 80V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

160

VGS =12V, ID = 45A

Qgs

Gate-to-Source Charge

VDS = 50V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD = 50V, ID = 45A,

Rise Time

125

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

Fall Time

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

6440

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1660

f = 1.0MHz

Crss

Reverse Transfer Capacitance

µA

Measured from the center of

drain pad to center of source pad

www.irf.com

IRHNA57160, JANSR2N7469U2

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

Up to 600K Rads(Si)

1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 100 -- 100 -- V V

= 0V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0 4.0 1.5 4.0

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100 -- 100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100 -- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 10 -- 25 µA

=80V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.013 -- 0.014

= 12V, I

= 45A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.012 -- 0.013

= 12V, I

= 45A

On-State Resistance (SMD-2)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRHNA57160 ( JANSR2N7469U2 ), IRHNA53160 ( JANSF2N7469U2 ) and IRHNA54160 ( JANSG2N7469U2 )
2. Part number IRHNA58160 ( JANSH2N7469U2 )

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

-- 1.2 -- 1.2 V

= 0V, IS = 45A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

(V)

MeV/(mg/cm

)) (MeV) (µm) @V

=0V @V

=-5V @V

=-10V @V

=-15V @V

=-20V

36.7

309 39.5 100 100 100 100 100

59.8

341 32.5 100 100 100 35 25

82.3

350 28.4 100 100 80

100

120

-20

-15

-10

-5

VDS

IRHNA57160, JANSR2N7469U2

Pre-Irradiation

www.irf.com

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

25V

100

1000

0.1

100

20µs PULSE WIDTH

T = 25 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , D

r
a
i
n
-
to

-S

o
u
r
c
e
C

u
rre

n
t
(A

)

5.0V

100

1000

0.1

100

20µs PULSE WIDTH

T = 150 C

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

100

1000

5.0

6.0

7.0

8.0

9.0

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , D

r
ain-to-S

ource C

u
rrent (A

)

T = 25 C

T = 150 C

-60 -40 -20

20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

, D

r
a
i
n
-
to

-S

o
u
r
c
e
O

n
R

e
s
i
s
t
a
n
c
e

(
N

a
l
i
z
ed)

(
on)

I =

12V

75A

www.irf.com

IRHNA57160, JANSR2N7469U2

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

2000

4000

6000

8000

10000

V , Drain-to-Source Voltage (V)

Capaci

t
ance (

p
F)

C
C

=
=

0V,

C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

Crss

Coss

Ciss

120

160

200

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

75A

= 20V

= 50V

= 80V

0.1

100

1000

0.2

0.6

1.0

1.4

1.8

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

Pre-Irradiation

45A

100

1000

VDS, Drain-to-Source Voltage (V)

100

1000

I D

,

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

100us

1ms

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

OPERATION IN THIS AREA LIMITED
BY R DS(ON)

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IRHNA53160

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