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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25C Continuous Drain Current
-56*
ID @ VGS = -12V, TC = 100C Continuous Drain Current
-56
IDM
Pulsed Drain Current
-224
PD @ TC = 25C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
725
mJ
IAR
Avalanche Current
-56
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
2.1
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
3.3 (Typical)
g
Pre-Irradiation
International Rectifier's R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
IRHNA597064
POWER MOSFET
SURFACE MOUNT (SMD-2)
11/01/04
www.irf.com
1
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNA597064 100K Rads (Si) 0.016
-56A*
IRHNA593064 300K Rads (Si) 0.016
-56A*
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
For footnotes refer to the last page
5
5
SMD-2
* Current is limited by package
PD-94604B
IRHNA597064
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
--
--
0.5
RthJ-PCB
Junction-to-PC board
--
1.6
--
soldered to a 2 square copper-clad board
C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
-56*
ISM
Pulse Source Current (Body Diode)
--
--
-224
VSD Diode Forward Voltage
--
--
-5.0
V
T
j
= 25C, IS = -56A, VGS = 0V
trr
Reverse Recovery Time
--
--
200
ns
Tj = 25C, IF =-56A, di/dt -100A/s
QRR Reverse Recovery Charge
--
--
500
nC
VDD -25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-60
--
--
V
VGS = 0V, ID = -1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
--
-0.064
--
V/C
Reference to 25C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.016
VGS = -12V, ID = -56A
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
--
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
40
--
--
S (
)
VDS = -25V, IDS = -56A
IDSS
Zero Gate Voltage Drain Current
--
--
-10
VDS= -48V ,VGS=0V
--
--
-25
VDS = -48V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
--
--
100
VGS = 20V
Qg
Total Gate Charge
--
--
200
VGS =-12V, ID = -56A
Qgs
Gate-to-Source Charge
--
--
65
nC
VDS = -30V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
60
td
(on)
Turn-On Delay Time
--
--
30
VDD = -30V, ID = -56A,
tr
Rise Time
--
--
100
VGS = -12V, RG = 2.35
td
(off)
Turn-Off Delay Time
--
--
100
tf
Fall Time
--
--
100
LS + LD
Total Inductance
--
6.0
--
Ciss
Input Capacitance
--
7022
--
VGS = 0V, VDS = -25V
Coss
Output Capacitance
--
2897
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
267
--
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
* Current is limited by package
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3
Pre-Irradiation
IRHNA597064
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300KRads(Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -60 -- -60 -- V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- -100 -- -100 nA
V
GS
=-20V
I
GSS
Gate-to-Source Leakage Reverse
-- 100 -- 100
V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
-- -10 -- -10 A V
DS
= -48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.016 -- 0.016
V
GS
= -12V, I
D
= -56A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
-- 0.016 -- 0.016
V
GS
= -12V, I
D
= -56A
On-State Resistance (SMD-2)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNA597064
2. Part number IRHNA593064
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
-- -5.0 -- -5.0 V V
GS
= 0V, IS = -56A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS (V)
(MeV/(mg/cm
2
)) (MeV) (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Br
37.3
285 36.8 - 60 - 60 - 60 - 60 - 60
I
59.9
345 32.7 - 60 - 60 - 60 - 45 - 25
Au
82.3
357 28.5 - 60 - 60 - 60
-- --
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
15
20
VGS
VDS
Br
I
Au
IRHNA597064
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
5
5.5
6
6.5
7
7.5
8
-VGS, Gate-to-Source Voltage (V)
100
1000
-
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
VDS = -25V
20
s PULSE WIDTH
TJ = 150C
TJ = 25C
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
10
100
1000
-
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
20
s PULSE WIDTH
Tj = 25C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
10
100
1000
-
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
20
s PULSE WIDTH
Tj = 150C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
-5.0V
-60 -40 -20 0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Norm
a
lized)
J
DS(
on)
V
=
I =
GS
D
-12V
-75A
-56A
www.irf.com
5
Pre-Irradiation
IRHNA597064
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.5
1.5
2.5
3.5
4.5
5.5
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
)
VGS = 0V
TJ = 150C
TJ = 25C
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
00s
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
0
4
8
12
16
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= -48V
VDS= -30V
ID = -56A
FOR TEST CIRCUIT
SEE FIGURE 13
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