Product Summary

Part Number

DSS

DS(on)

IRHNA7160

100V

0.045

51A

IRHNA8160

100V

0.045

51A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Lightweight

Absolute Maximum Ratings

Parameter

IRHNA7160, IRHNA8160

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

32.5

IDM

Pulsed Drain Current

204

PD @ TC = 25°C

Max. Power Dissipation

300

Linear Derating Factor

2.0

W/K

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 sec.)

Weight

3.3 (typical)

N-CHANNEL

MEGA RAD HARD

Provisional Data Sheet No. PD-9.1396

Pre-Radiation

100 Volt, 0.045

, MEGA RAD HARD HEXFET

International Rectifier's RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier's RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10

Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10

Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier's patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.

They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.

IRHNA7160
IRHNA8160

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

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Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

0.42

K/W

RthJ-PCB

Junction-to-PC board

TBD

soldered to a copper-clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

204

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

1.8

= 25°C, IS = 51A, VGS = 0V

trr

Reverse Recovery Time

570

Tj = 25°C, IF = 51A, di/dt

100A/

QRR

Reverse Recovery Charge

5.8

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.13

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.045

VGS = 12V, ID =32.5 A

On-State Resistance

0.050

VGS = 12V, ID = 51A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0 mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 32.5A

IDSS

Zero Gate Voltage Drain Current

VDS = 0.8 x Max Rating,VGS = 0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

224

VGS =12V, ID = 51A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

VDD = 50V, ID =51 A,

Rise Time

265

RG = 2.35

td(off)

Turn-Off Delay Time

240

Fall Time

180

Internal Drain Inductance

8.7

Internal Source Inductance

8.7

Ciss

Input Capacitance

6000

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1700

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

280

IRHNA7160, IRHNA8160 Devices

Pre-Radiation

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

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Table 2. High Dose Rate

Rads (Si)/sec 10

Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

Applied drain-to-source voltage
during gamma-dot

IPP

140

Peak radiation induced photo-current

di/dt

800

160 A/µsec Rate of rise of photo-current

0.1

0.5

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ions/cm

)

(

(V)

BVDSS

100

1 x 10

~41

100

-5

Radiation Performance of Rad Hard HEXFETs

IRHNA7160, IRHNA8160 Devices

Radiation Characteristics

Table 1. Low Dose Rate

IRHNA7160 IRHNA8160

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

min.

max.

min.

max.

DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 1.0 mA

GS(th)

Gate Threshold Voltage

2.0

4.0

1.25

4.5

= V

, I

= 1.0 mA

GSS

Gate-to-Source Leakage Forward

100

= 20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

= 0.8 x Max Rating, V

= 0V

DS(on)1

Static Drain-to-Source

0.045

0.062

= 12V, I

=32.5A

On-State Resistance One

Diode Forward Voltage

1.8

TC = 25°C, IS = 51A,V

= 0V

International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V

DSS

bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10

Rads (Si)

are identical and are presented in Table 1, column
1, IRHNA7160. The values in Table 1 will be met for
either of the two low dose rate test circuits that are

used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level
of 1 x 10

Rads (Si), no change in limits are speci-

fied in DC parameters.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

Rads

(Si)/Sec.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.

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IRHNA7160, IRHNA8160 Devices

Radiation Characteristics

Case Outline and Dimensions -- SMD2

Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.

@ VDD = 25V, Starting TJ = 25°C,
EAS = [0.5 * L * (I

) * [BVDSS/(BVDSS-VDD)]

Peak IL = 51A, VGS = 12V, 25

200

ISD

51A, di/dt

170 A/

VDD

BVDSS, TJ

150°C

Suggested RG = 2.35

Pulse width

300

s; Duty Cycle

K/W = °C/W
W/K = W/°C

Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.

Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.

This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.

Process characterized by independent laboratory.

All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.

LEAD ASSIGNMENTS

1 = DRAIN
2 = GATE
3 = SOURCE

NOTES:

1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982

2. CONTROLLING DIMENSION: INCH

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

4 DIMENSION INCLUDES METALLIZATION FLASH

5 DIMENSION DOES NOT INCLUDE METALLIZATION FLASH

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/96

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