Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

75*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

75*

IDM

Pulsed Drain Current

300

PD @ TC = 25°C

Max. Power Dissipation

300

Linear Derating Factor

2.4

W/°C

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

0.35

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 ( for 5 sec.)

Weight

3.3 (Typical )

Pre-Irradiation

International Rectifier's RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)

12/18/01

www.irf.com

Product Summary

Part Number Radiation Level R

DS(on)

IRHNB7Z60 100K Rads (Si) 0.009

75*A

IRHNB3Z60 300K Rads (Si) 0.009

75*A

IRHNB4Z60 600K Rads (Si) 0.009

75*A

IRHNB8Z60 1000K Rads (Si) 0.009

75*A

For footnotes refer to the last page
*Current is limited by internal wire diameter

IRHNB7Z60

30V, N-CHANNEL

RAD-Hard

HEXFET

TECHNOLOGY

SMD-3

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

PD - 91754A

www.irf.com

IRHNB7Z60

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

75*

ISM

Pulse Source Current (Body Diode)

300

VSD

Diode Forward Voltage

1.8

= 25°C, IS = 75A, VGS = 0V

trr

Reverse Recovery Time

245

Tj = 25°C, IF = 75A, di/dt

100A/

QRR Reverse Recovery Charge

1.1

µC

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

0.42

RthJ-PCB

Junction-to-PC board

1.6

Soldered to a 1" sq. copper-clad board

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 1.0mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.023

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

0.009

VGS = 12V, ID = 75A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

S (

)

VDS > 15V, IDS = 75A

IDSS

Zero Gate Voltage Drain Current

VDS= 24V ,VGS=0V

250

VDS = 24V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

421

VGS =12V, ID = 75A

Qgs

Gate-to-Source Charge

104

VDS = 15V

Qgd

Gate-to-Drain (`Miller') Charge

(on)

Turn-On Delay Time

VDD =15V, ID = 75A

Rise Time

370

VGS =12V, RG = 2.35

(off)

Turn-Off Delay Time

150

Fall Time

280

LS + LD

Total Inductance

4.0

Ciss

Input Capacitance

7000

VGS = 0V, VDS = 25V

Coss

Output Capacitance

4800

f = 1.0MHz

Crss

Reverse Transfer Capacitance

1800

*Current is limited by the internal wire diameter

Measured from the center of
drain pad to center of source pad

°C/W

www.irf.com

Pre-Irradiation

IRHNB7Z60

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

300 - 1000K Rads (Si)

Units

Test Conditions

Min Max Min Max
BV

DSS

Drain-to-Source Breakdown Voltage 30 -- 30 -- V V

= 12V, I

= 1.0mA

GS(th)

Gate Threshold Voltage

2.0

4.0

1.25 4.5

= V

, I

= 1.0mA

GSS

Gate-to-Source Leakage Forward

-- 100

100 nA

= 20V

GSS

Gate-to-Source Leakage Reverse

-- -100

= -20 V

DSS

Zero Gate Voltage Drain Current

-- 50 µA

=24V, V

=0V

DS(on)

Static Drain-to-Source

-- 0.009

-- 0.03

= 12V, I

=15A

On-State Resistance (TO-3)

DS(on)

Static Drain-to-Source

-- 0.009 -- 0.03

= 12V, I

=15A

On-State Resistance (SMD-3)

Diode Forward Voltage

-- 1.8 --

1.8 V

= 0V, IS = 75A

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

1. Part number IRHNB7Z60

2. Part numbers IRHNB3Z60, IRHNB4Z60 and IRHNB8Z60

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

)

(

)

(

)

(

)

(

Radiation Characteristics

-5

-10

-15

-20

VGS

VDS

www.irf.com

IRHNB7Z60

Pre-Irradiation

100

1000

0.1

100

20µs PULSE WIDTH
T = 25 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

Fig 1. Typical Output Characteristics

100

1000

0.1

100

20µs PULSE WIDTH
T = 150 C

TOP

BOTTOM

VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

5.0V

Fig 2. Typical Output Characteristics

100

1000

V = 50V
20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 150 C

T = 25 C

Fig 3. Typical Transfer Characteristics

-60 -40 -20

80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

I =

10V

75A

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

Pre-Irradiation

IRHNB7Z60

100

3000

6000

9000

12000

15000

V , Drain-to-Source Voltage (V)

apacitance

(
pF

)

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

C SHORTED

GS
iss

gd ,

rss

oss

iss

rss

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

200

300

400

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

75A

= 15V

= 24V

100

1000

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

T = 150 C

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

= 150 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)
I , Drain Current (A)

100us

1ms

10ms

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

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