Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25C
Continuous Drain Current
14.4
ID @ VGS = 12V, TC = 100C Continuous Drain Current
9.1
IDM
Pulsed Drain Current
58
PD @ TC = 25C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy 150
mJ
IAR
Avalanche Current
14.4
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
6.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
International Rectifier's RAD-Hard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
2/4/00
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1
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
For footnotes refer to the last page
SMD-0.5
IRHNJ7130
100V, N-CHANNEL
RAD-Hard
TM
HEXFET
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNJ7130 100K Rads (Si) 0.18
14.4A
IRHNJ3130 300K Rads (Si) 0.18
14.4A
IRHNJ4130 600K Rads (Si) 0.18
14.4A
IRHNJ8130 1000K Rads (Si) 0.18
14.4A
PD - 93820
IRHNJ7130
Pre-Irradiation
2
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For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
--
--
14.4
ISM
Pulse Source Current (Body Diode)
--
--
58
VSD
Diode Forward Voltage
--
--
1.5
V
T
j
= 25C, IS = 14.4A, VGS = 0V
trr
Reverse Recovery Time
--
--
275
nS
Tj = 25C, IF = 14.4A, di/dt
100A/
s
QRR Reverse Recovery Charge
--
--
2.5
C
VDD
25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
--
--
1.67
Electrical Characteristics
@ Tj = 25C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
--
--
V
VGS = 0V, ID = 1.0mA
BVDSS/
TJ Temperature Coefficient of Breakdown
--
0.11
--
V/C
Reference to 25C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
--
--
0.18
VGS = 12V, ID = 9.1A
Resistance
--
--
0.20
VGS = 12V, ID = 14.4A
VGS(th)
Gate Threshold Voltage
2.0
--
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
2.5
--
--
S (
)
VDS > 15V, IDS = 9.1A
IDSS
Zero Gate Voltage Drain Current
--
--
25
VDS= 80V, VGS=0V
--
--
250
VDS = 80V,
VGS = 0V, TJ = 125C
IGSS
Gate-to-Source Leakage Forward
--
--
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
--
--
-100
VGS = -20V
Qg
Total Gate Charge
--
--
50
VGS = 12V, ID = 14.4A
Qgs
Gate-to-Source Charge
--
--
10
nC
VDS = 50V
Qgd
Gate-to-Drain (`Miller') Charge
--
--
20
td
(on)
Turn-On Delay Time
--
--
35
VDD = 50V, ID = 14.4A,
tr
Rise Time
--
--
75
RG = 7.5
td
(off)
Turn-Off Delay Time
--
--
70
tf
Fall Time
--
--
60
LS + LD
Total Inductance
--
4.0
--
Ciss
Input Capacitance
--
960
--
VGS = 0V, VDS = 25V
Coss
Output Capacitance
--
340
--
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
85
--
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
C/W
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3
IRHNJ7130
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K to 1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 -- 100 -- V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
-- 100 -- 100 nA
V
GS
= 20V
I
GSS
Gate-to-Source Leakage Reverse
-- -100 -- -100
V
GS
= -20 V
I
DSS
Zero Gate Voltage Drain Current
-- 25 -- 25 A V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
-- 0.19 -- 0.25
V
GS
= 12V, I
D
= 9.1A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
-- 0.18 -- 0.24
V
GS
= 12V, I
D
= 9.1A
On-State Resistance (SMD-0.5)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130
2. Part number IRHNJ8130
Fig a. Single Event Effect, Safe Operating Area
V
SD
Diode Forward Voltage
--
1.5 -- 1.5 V V
GS
= 0V, IS = 14.4A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Characteristics
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
V
DS
(V)
MeV/(mg/cm
2
)) (MeV) (m) @V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Cu
28.0
285 43.0 100 100 100 80 60
Br
36.8
305 39.0 100 90 70 50 --
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
VDS
Cu
Br
IRHNJ7130
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
5
7
9
11
13
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
12V
14.4A
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5
IRHNJ7130
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
500
1000
1500
2000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
14 A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
T = 25 C
J
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